| Improvement of interface properties in SiC (0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing H Fujimoto, T Kobayashi, T Shimura, H Watanabe Applied Physics Express 16 (7), 074004, 2023 | 10 | 2023 |
| Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation H Fujimoto, T Kobayashi, M Sometani, M Okamoto, T Shimura, ... Applied Physics Express 15 (10), 104004, 2022 | 5 | 2022 |
| Impact of post-deposition annealing on SiO2/SiC interfaces formed by plasma nitridation of the SiC surface and SiO2 deposition H Fujimoto, T Kobayashi, H Watanabe Applied Physics Express 17 (11), 116503, 2024 | 1 | 2024 |
| Impact of Post Deposition Annealing on SiO2/SiC Structures Formed by Plasma Nitridation of the SiC Surface H Fujimoto, T Kobayashi, H Watanabe Scientific Books of Abstracts 8, 136-138, 2024 | | 2024 |
| Impacts of Thermal Oxidation and Forming Gas Annealing on Surface Morphology of SiC (0001) S Kamihata, H Fujimoto, T Kobayashi, H Watanabe Scientific Books of Abstracts 8, 301-302, 2024 | | 2024 |
