| An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates N Waldron, C Merckling, W Guo, P Ong, L Teugels, S Ansar, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 108 | 2014 |
| Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical properties WJ Tseng, DH Van Dorp, RR Lieten, PM Vereecken, G Borghs The Journal of Physical Chemistry C 118 (51), 29492-29498, 2014 | 103 | 2014 |
| SiC: a photocathode for water splitting and hydrogen storage DH Van Dorp, N Hijnen, M Di Vece, JJ Kelly ANGEWANDTE CHEMIE. INTERNATIONAL EDITION 48 (33), 6085-6088, 2009 | 99 | 2009 |
| Photoetching mechanisms of GaN in alkaline S2O82− solution DH Van Dorp, JL Weyher, MR Kooijman, JJ Kelly Journal of The Electrochemical Society 156 (10), D371, 2009 | 73 | 2009 |
| Large area copper plated silicon solar cell exceeding 19.5% efficiency L Tous, R Russell, J Das, R Labie, M Ngamo, J Horzel, H Philipsen, ... Energy Procedia 21, 58-65, 2012 | 71 | 2012 |
| The K2S2O8–KOH photoetching system for GaN JL Weyher, FD Tichelaar, DH Van Dorp, JJ Kelly, A Khachapuridze Journal of Crystal Growth 312 (18), 2607-2610, 2010 | 68 | 2010 |
| Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow N Waldron, S Sioncke, J Franco, L Nyns, A Vais, X Zhou, HC Lin, ... 2015 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2015 | 63 | 2015 |
| Electroless nickel deposition and silicide formation for advanced front side metallization of industrial silicon solar cells L Tous, DH Van Dorp, R Russell, J Das, M Aleman, H Bender, ... Energy Procedia 21, 39-46, 2012 | 52 | 2012 |
| Anodic etching of SiC in alkaline solutions DH Van Dorp, JL Weyher, JJ Kelly Journal of micromechanics and microengineering 17 (4), S50, 2007 | 49 | 2007 |
| Wet-chemical approaches for atomic layer etching of semiconductors: Surface chemistry, oxide removal and reoxidation of InAs (100) DH van Dorp, S Arnauts, F Holsteyns, S De Gendt ECS Journal of Solid State Science and Technology 4 (6), N5061, 2015 | 41 | 2015 |
| Electrochemistry of anodic etching of 4H and 6H–SiC in fluoride solution of pH 3 DH Van Dorp, J Sattler, JH Den Otter, JJ Kelly Electrochimica acta 54 (26), 6269-6275, 2009 | 40 | 2009 |
| Photoelectrochemistry of 4H–SiC in KOH solutions DH Van Dorp, JJ Kelly Journal of Electroanalytical Chemistry 599 (2), 260-266, 2007 | 39 | 2007 |
| Electrochemical photodegradation study of semiconductor pigments: Influence of environmental parameters W Anaf, S Trashin, O Schalm, D van Dorp, K Janssens, K De Wael Analytical Chemistry 86 (19), 9742-9748, 2014 | 36 | 2014 |
| Study of InP surfaces after wet chemical treatments D Cuypers, DH Van Dorp, M Tallarida, S Brizzi, T Conard, LNJ Rodriguez, ... ECS Journal of Solid State Science and Technology 3 (1), N3016, 2013 | 34 | 2013 |
| Sacrificial self-assembled monolayers for the passivation of GaAs (100) surfaces and interfaces D Cuypers, C Fleischmann, DH van Dorp, S Brizzi, M Tallarida, M Müller, ... Chemistry of Materials 28 (16), 5689-5701, 2016 | 32 | 2016 |
| Wet chemical etching of InP for cleaning applications: I. An oxide formation/oxide dissolution model D Cuypers, S De Gendt, S Arnauts, K Paulussen, DH van Dorp ECS Journal of Solid State Science and Technology 2 (4), P185, 2013 | 27 | 2013 |
| Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm X Zhou, N Waldron, G Boccardi, F Sebaai, C Merckling, G Eneman, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 23 | 2016 |
| Nanoscale etching of In0. 53Ga0. 47As in H2O2/HCl solutions for advanced CMOS processing DH van Dorp, S Arnauts, D Cuypers, J Rip, F Holsteyns, S De Gendt, ... ECS Journal of Solid State Science and Technology 3 (6), P179, 2014 | 23 | 2014 |
| Wet chemical etching of InP for cleaning applications: II. Oxide removal DH Van Dorp, D Cuypers, S Arnauts, A Moussa, L Rodriguez, S De Gendt ECS Journal of Solid State Science and Technology 2 (4), P190, 2013 | 23 | 2013 |
| Electrochemical growth of micrometer-thick oxide on SiC in acidic fluoride solution DH Van Dorp, ES Kooij, WM Arnoldbik, JJ Kelly Chemistry of materials 21 (14), 3297-3305, 2009 | 23 | 2009 |