S.K. Estreicher

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2020
Позовавания	7243	1077
h-индекс	48	15
i10-индекс	125	28

320

160

240

198619871988198919901991199219931994199519961997199819992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024202520 25 52 73 76 146 119 110 100 151 99 131 140 253 154 225 187 265 251 202 194 169 229 303 209 189 198 241 317 285 249 231 286 229 226 215 204 190 199 42

Публичен достъп

Преглед на всички

1 статия

2 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Mahdi SanatiAssociate Professor of Physics, Texas Tech UniversityПотвърден имейл адрес: ttu.edu
Michael StavolaProfessor of Physics, Lehigh UniversityПотвърден имейл адрес: lehigh.edu
Damien WestResearch Scientist, Rensselaer Polytechnic InstituteПотвърден имейл адрес: rpi.edu
P. OrdejonICN2 - Institut Català de Nanociència i NanotecnologiaПотвърден имейл адрес: icn2.cat
Mehmet Bahadir BebekIntelПотвърден имейл адрес: intel.com
Maen GharaibehProfessor of Physics, Jordan University of Science and TechnologyПотвърден имейл адрес: just.edu.jo
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaПотвърден имейл адрес: mse.ufl.edu
Christopher M StanleyUniversity of Indianapolis, RB Annis School of EngineeringПотвърден имейл адрес: uindy.edu
Patrick BriddonProfessor of Computational Physics, University of NewcastleПотвърден имейл адрес: ncl.ac.uk
Manuel CardonaMax Planck InstitutПотвърден имейл адрес: fkf.mpg.de
Alexandra CarvalhoNational University of Singapore; McLaren Applied TechnologiesПотвърден имейл адрес: ua.pt
Miguel PrunedaNanomaterials and Nanotechnology Research Center (CINN-CSIC)Потвърден имейл адрес: cinn.es
David A. DraboldOhio UniversityПотвърден имейл адрес: ohio.edu

Следене

S.K. Estreicher

Texas Tech University

Потвърден имейл адрес: ttu.edu - Начална страница

defects in semiconductors


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Hydrogen interactions with defects in crystalline solids SM Myers, MI Baskes, HK Birnbaum, JW Corbett, GG DeLeo, ... Reviews of Modern Physics 64 (2), 559, 1992	654	1992
Hydrogen-related defects in crystalline semiconductors: a theorist's perspective SK Estreicher Materials Science and Engineering: R: Reports 14 (7-8), 319-412, 1995	339	1995
Hydrogen in silicon: A discussion of diffusion and passivation mechanisms BL Sopori, X Deng, JP Benner, A Rohatgi, P Sana, SK Estreicher, YK Park, ... Solar Energy Materials and Solar Cells 41, 159-169, 1996	242	1996
Vacancy aggregates in silicon JL Hastings, SK Estreicher, PA Fedders Physical Review B 56 (16), 10215, 1997	193	1997
Equilibrium sites and electronic structure of interstitial hydrogen in Si S Estreicher Physical Review B 36 (17), 9122, 1987	168	1987
Theory of defects in semiconductors DA Drabold Springer, 2007	164	2007
Bond-centered hydrogen or muonium in diamond: the explanation for anomalous muonium and an example of metastability TL Estle, S Estreicher, DS Marynick Physical review letters 58 (15), 1547, 1987	163	1987
Nickel: A very fast diffuser in silicon J Lindroos, DP Fenning, DJ Backlund, E Verlage, A Gorgulla, ... Journal of applied physics 113 (20), 2013	135	2013
Interstitial O in Si and its interactions with H SK Estreicher Physical Review B 41 (14), 9886, 1990	130	1990
First-Principles Calculations of Vibrational Lifetimes and Decay Channels:<? format?> Hydrogen-Related Modes in Si D West, SK Estreicher Physical review letters 96 (11), 115504, 2006	124	2006
The ring-hexavacany in silicon: A stable and inactive defect SK Estreicher, JL Hastings, PA Fedders Applied physics letters 70 (4), 432-434, 1997	107	1997
Hydrogen passivation of shallow acceptors and donors in c-Si: Comparisons and trends SK Estreicher, L Throckmorton, DS Marynick Physical Review B 39 (18), 13241, 1989	105	1989
Unexpected dynamics for self-interstitial clusters in silicon SK Estreicher, M Gharaibeh, PA Fedders, P Ordejón Physical review letters 86 (7), 1247, 2001	104	2001
Interstitial aggregates and a new model for the I1/W optical centre in silicon BJ Coomer, JP Goss, R Jones, S Öberg, PR Briddon Physica B: Condensed Matter 273, 505-508, 1999	102	1999
Heat capacity and phonon mean free path of wurtzite GaN BA Danilchenko, T Paszkiewicz, S Wolski, A Jeżowski, T Plackowski Applied physics letters 89 (6), 2006	95	2006
Wine: from Neolithic times to the 21st century SK Estreicher Algora Publishing, 2006	95	2006
Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence line SK Estreicher, J Weber, A Derecskei-Kovacs, DS Marynick Physical Review B 55 (8), 5037, 1997	90	1997
Vacancy and vacancy-hydrogen complexes in silicon MA Roberson, SK Estreicher Physical Review B 49 (24), 17040, 1994	90	1994
Rich chemistry of copper in crystalline silicon SK Estreicher Physical Review B 60 (8), 5375, 1999	89	1999
Defect-induced dissociation of H 2 in silicon SK Estreicher, JL Hastings, PA Fedders Physical Review B 57 (20), R12663, 1998	85	1998

Системата не може да изпълни операцията сега. Опитайте отново по-късно.

Статии 1–20

Позовавания годишно

Дублирани описания

Обединени библиографски описания

Добавяне на съавториСъавтори

Следене

Позовавания

Съавтори