Следене
Niharika Thakuria
Niharika Thakuria
NAND Reliability, Micron Technology
Потвърден имейл адрес: micron.com
Заглавие
Позовавания
Позовавания
Година
First Demonstration of WSe2 Based CMOS-SRAM
CS Pang, N Thakuria, SK Gupta, Z Chen
2018 IEEE International Electron Devices Meeting (IEDM), 22.2. 1-22.2. 4, 2018
312018
Oscillators utilizing ferroelectric-based transistors and their coupled dynamics
N Thakuria, AK Saha, SK Thirumala, B Jung, SK Gupta
IEEE Transactions on Electron Devices 66 (5), 2415-2423, 2019
212019
Valley-coupled-spintronic non-volatile memories with compute-in-memory support
SK Thirumala, YT Hung, S Jain, A Raha, N Thakuria, V Raghunathan, ...
IEEE Transactions on Nanotechnology 19, 635-647, 2020
122020
2-D strain FET (2D-SFET) based SRAMs—Part I: Device-circuit interactions
N Thakuria, D Schulman, S Das, SK Gupta
IEEE Transactions on Electron Devices 67 (11), 4866-4874, 2020
62020
Polarization-induced strain-coupled TMD FETs (PS FETs) for non-volatile memory applications
N Thakuria, AK Saha, SK Thirumala, D Schulman, S Das, SK Gupta
2020 Device Research Conference (DRC), 1-2, 2020
62020
2D strain FET (2D-SFET)-based SRAMs—Part II: Back voltage-enabled designs
N Thakuria, D Schulman, S Das, SK Gupta
IEEE Transactions on Electron Devices 67 (11), 4875-4883, 2020
42020
2-transistor schmitt trigger based on 2D electrostrictive field effect transistors
N Thakuria, D Schulmarr, S Das, SK Gupta
2018 76th Device Research Conference (DRC), 1-2, 2018
42018
Piezoelectric Strain FET (PeFET)-Based Nonvolatile Memories
N Thakuria, R Elangovan, A Raghunathan, SK Gupta
IEEE Transactions on Electron Devices 70 (6), 3076-3084, 2023
32023
Step-cim: Strain-enabled ternary precision computation-in-memory based on non-volatile 2d piezoelectric transistors
N Thakuria, R Elangovan, SK Thirumala, A Raghunathan, SK Gupta
Frontiers in Nanotechnology 4, 905407, 2022
32022
WSe2 based Valley-Coupled-Spintronic Devices for Low Power Non-Volatile Memories
S Thirumala, T Hung, A Raha, N Thakuria, K Cho, V Raghunathan, ...
2019 Device Research Conference (DRC), 211-212, 2019
32019
2D electrostrictive FET based circuits: Compact modeling and device-circuit co-design
N Thakuria
22018
Non-volatile polarization induced strain coupled 2D FET memory
N Thakuria, SK Gupta
US Patent 11,296,224, 2022
12022
Utilizing Valley-Spin Hall Effect in WSe2 for Low Power Non-Volatile Flip-Flop Design
K Cho, SK Thirumala, X Liu, N Thakuria, Z Chen, SK Gupta
2020 Device Research Conference (DRC), 1-2, 2020
12020
SiTe CiM: Signed Ternary Computing-in-Memory for Ultra-Low Precision Deep Neural Networks
N Thakuria, A Malhotra, SK Thirumala, R Elangovan, A Raghunathan, ...
arXiv preprint arXiv:2408.13617, 2024
2024
Negative Capacitors and Applications
MA Alam, N Zagni, AK Saha, N Thakuria, S Thirumala, SK Gupta
Springer Handbook of Semiconductor Devices, 931-958, 2022
2022
Energy Efficient Cache Design with Piezoelectric FETs
R Elangovan, A Ranjan, N Thakuria, S Gupta, A Raghunathan
Proceedings of the ACM/IEEE International Symposium on Low Power Electronics …, 2022
2022
Device Circuit Co-Design Utilizing Piezoelectric and Ferroelectric Materials
N Thakuria
Purdue University, 2022
2022
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