Atomically precise placement of single dopants in Si SR Schofield, NJ Curson, MY Simmons, FJ Rueß, T Hallam, L Oberbeck, ...
Physical review letters 91 (13), 136104, 2003
515 2003 Towards the fabrication of phosphorus qubits for a silicon quantum computer JL O’Brien, SR Schofield, MY Simmons, RG Clark, AS Dzurak, NJ Curson, ...
Physical Review B 64 (16), 161401, 2001
282 2001 Toward atomic-scale device fabrication in silicon using scanning probe microscopy FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ...
Nano Letters 4 (10), 1969-1973, 2004
219 2004 Quantum engineering at the silicon surface using dangling bonds SR Schofield, P Studer, CF Hirjibehedin, NJ Curson, G Aeppli, DR Bowler
Nature communications 4 (1), 1649, 2013
199 2013 Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer L Oberbeck, NJ Curson, MY Simmons, R Brenner, AR Hamilton, ...
Applied physics letters 81 (17), 3197-3199, 2002
126 2002 Progress in silicon-based quantum computing RG Clark, R Brenner, TM Buehler, V Chan, NJ Curson, AS Dzurak, ...
Philosophical Transactions of the Royal Society of London. Series A …, 2003
92 2003 Thermal dissociation and desorption of HF Wilson, O Warschkow, NA Marks, NJ Curson, SR Schofield, ...
Physical Review B—Condensed Matter and Materials Physics 74 (19), 195310, 2006
87 2006 Nondestructive imaging of atomically thin nanostructures buried in silicon G Gramse, A Kölker, T Lim, TJZ Stock, H Solanki, SR Schofield, ...
Science advances 3 (6), e1602586, 2017
81 2017 Phosphine dissociation on the Si (001) surface HF Wilson, O Warschkow, NA Marks, SR Schofield, NJ Curson, PV Smith, ...
Physical review letters 93 (22), 226102, 2004
81 2004 Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy L Oberbeck, NJ Curson, T Hallam, MY Simmons, G Bilger, RG Clark
Applied Physics Letters 85 (8), 1359-1361, 2004
74 2004 Phosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structures O Warschkow, HF Wilson, NA Marks, SR Schofield, NJ Curson, PV Smith, ...
Physical Review B—Condensed Matter and Materials Physics 72 (12), 125328, 2005
62 2005 Single photon detection with a quantum dot transistor AJ Shields, MP O'Sullivan, I Farrer, DA Ritchie, ML Leadbeater, NK Patel, ...
Japanese Journal of Applied Physics 40 (3S), 2058, 2001
61 2001 Scanning probe microscopy for silicon device fabrication MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ...
Molecular Simulation 31 (6-7), 505-515, 2005
60 2005 STM characterization of the Si-P heterodimer NJ Curson, SR Schofield, MY Simmons, L Oberbeck, JL O’brien, RG Clark
Physical Review B 69 (19), 195303, 2004
60 2004 Atomic-scale patterning of arsenic in silicon by scanning tunneling microscopy TJZ Stock, O Warschkow, PC Constantinou, J Li, S Fearn, E Crane, ...
ACS nano 14 (3), 3316-3327, 2020
59 2020 Reaction paths of phosphine dissociation on silicon (001) O Warschkow, NJ Curson, SR Schofield, NA Marks, HF Wilson, ...
The Journal of Chemical Physics 144 (1), 2016
51 2016 Valence surface electronic states on Ge (001) MW Radny, GA Shah, SR Schofield, PV Smith, NJ Curson
Physical review letters 100 (24), 246807, 2008
46 2008 Topological phases of a dimerized Fermi–Hubbard model for semiconductor nano-lattices NH Le, AJ Fisher, NJ Curson, E Ginossar
npj Quantum Information 6 (1), 24, 2020
45 2020 Phosphine dissociation and diffusion on Si (001) observed at the atomic scale SR Schofield, NJ Curson, O Warschkow, NA Marks, HF Wilson, ...
The Journal of Physical Chemistry B 110 (7), 3173-3179, 2006
45 2006 Ballistic transport in a NJ Curson, R Nemutudi, NJ Appleyard, M Pepper, DA Ritchie, GAC Jones
Applied Physics Letters 78 (22), 3466-3468, 2001
45 2001 
Steven R. SchofieldUniversity College LondonПотвърден имейл адрес: ucl.ac.uk
