Surface group modification and carrier transport properties of layered transition metal carbides (Ti 2 CT x, T:–OH,–F and–O) S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee
Nanoscale 7 (46), 19390-19396, 2015
370 2015 Plasma-treated thickness-controlled two-dimensional black phosphorus and its electronic transport properties J Jia, SK Jang, S Lai, J Xu, YJ Choi, JH Park, S Lee
ACS nano 9 (9), 8729-8736, 2015
219 2015 Large-Area Highly Conductive Transparent Two-Dimensional Ti2 CTx Y Yang, S Umrao, S Lai, S Lee
The journal of physical chemistry letters 8 (4), 859-865, 2017
140 2017 Magnetic Proximity Effect in Graphene/CrBr3 van der Waals Heterostructures C Tang, Z Zhang, S Lai, Q Tan, W Gao
Advanced Materials 32 (16), 1908498, 2020
129 2020 Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor S Lai, H Liu, Z Zhang, J Zhao, X Feng, N Wang, C Tang, Y Liu, ...
Nature Nanotechnology 16 (8), 869-873, 2021
121 2021 Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric J Xu, J Jia, S Lai, J Ju, S Lee
Applied Physics Letters 110 (3), 2017
102 2017 HfO 2/HfS 2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS 2 S Lai, S Byeon, SK Jang, J Lee, BH Lee, JH Park, YH Kim, S Lee
Nanoscale 10 (39), 18758-18766, 2018
72 2018 Berry connection polarizability tensor and third-order Hall effect H Liu, J Zhao, YX Huang, X Feng, C Xiao, W Wu, S Lai, W Gao, SA Yang
Physical Review B 105 (4), 045118, 2022
62 2022 Organic field-effect transistors integrated with Ti 2 CT x electrodes S Lai, SK Jang, JH Cho, S Lee
Nanoscale 10 (11), 5191-5197, 2018
35 2018 Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe4 C Wang, RC Xiao, H Liu, Z Zhang, S Lai, C Zhu, H Cai, N Wang, S Chen, ...
National Science Review 9 (12), nwac020, 2022
31 2022 Epitaxial Growth of Large‐Grain NiSe Films by Solid‐State Reaction for High‐Responsivity Photodetector Arrays C Cai, Y Ma, J Jeon, F Huang, F Jia, S Lai, Z Xu, C Wu, R Zhao, Y Hao, ...
Advanced Materials 29 (17), 1606180, 2017
29 2017 Water-penetration-assisted mechanical transfer of large-scale molybdenum disulfide onto arbitrary substrates S Lai, J Jeon, YJ Song, S Lee
RSC advances 6 (62), 57497-57501, 2016
28 2016 A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures C Jiang, A Rasmita, H Ma, Q Tan, Z Zhang, Z Huang, S Lai, N Wang, S Liu, ...
Nature Electronics 5 (1), 23-27, 2022
21 2022 Probing graphene defects and estimating graphene quality with optical microscopy S Lai, S Kyu Jang, Y Jae Song, S Lee
Applied Physics Letters 104 (4), 2014
18 2014 Dual-gate all-electrical valleytronic transistors S Lai, Z Zhang, N Wang, A Rasmita, Y Deng, Z Liu, W Gao
Nano Letters 23 (1), 192-197, 2023
12 2023 Correction: Surface group modification and carrier transport properties of layered transition metal carbides (Ti 2 CT x, T:–OH,–F and–O) S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee
Nanoscale 8 (2), 1216-1216, 2016
10 2016 Resolidified Chalcogen‐Assisted Growth of Bilayer Semiconductors with Controlled Stacking Orders Q Wu, L He, D Wang, H Nong, J Wang, Z Cai, S Zhao, R Zheng, S Lai, ...
Small 20 (2), 2305506, 2024
4 2024 Non-centrosymmetric topological phase probed by non-linear Hall effect N Wang, JY You, A Wang, X Zhou, Z Zhang, S Lai, YP Feng, H Lin, ...
National Science Review 11 (6), nwad103, 2024
3 2024 Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures C Jiang, A Rasmita, H Ma, Q Tan, Z Huang, S Lai, S Liu, X Liu, Q Xiong, ...
arXiv preprint arXiv:2102.03756, 2021
3 2021 Nonlinear Hall effect with non-centrosymmetric topological phase in ZrTe N Wang, JY You, A Wang, X Zhou, Z Zhang, S Lai, HJ Tien, TR Chang, ...
arXiv preprint arXiv:2202.07143, 2022
2 2022 
Weibo GaoNanyang technological UniversityПотвърден имейл адрес: ntu.edu.sg