Следене
Bo Zhang （张波）,Professor
Bo Zhang （张波）,Professor
Univ. of Electron. Sci. & Technol. of China
Потвърден имейл адрес: uestc.edu.cn - Начална страница
Заглавие
Позовавания
Позовавания
Година
Targeting cell death pathways for cancer therapy: recent developments in necroptosis, pyroptosis, ferroptosis, and cuproptosis research
X Tong, R Tang, M Xiao, J Xu, W Wang, B Zhang, J Liu, X Yu, S Shi
Journal of hematology & oncology 15 (1), 174, 2022
4482022
GaN power integration for high frequency and high efficiency power applications: A review
R Sun, J Lai, W Chen, B Zhang
Ieee Access 8, 15529-15542, 2020
1852020
A novel 700-V SOI LDMOS with double-sided trench
X Luo, B Zhang, Z Li, Y Guo, X Tang, Y Liu
IEEE Electron Device Letters 28 (5), 422-424, 2007
1372007
A SiC power MOSFET loss model suitable for high-frequency applications
X Li, J Jiang, AQ Huang, S Guo, X Deng, B Zhang, X She
IEEE Transactions on Industrial Electronics 64 (10), 8268-8276, 2017
1342017
Understanding switching losses in SiC MOSFET: Toward lossless switching
X Li, L Zhang, S Guo, Y Lei, AQ Huang, B Zhang
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
1322015
A 1.6-V 25-A 5-ppm/C Curvature-Compensated Bandgap Reference
ZK Zhou, Y Shi, Z Huang, PS Zhu, YQ Ma, YC Wang, Z Chen, X Ming, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 59 (4), 677-684, 2011
1282011
New thin-film power MOSFETs with a buried oxide double step structure
B Duan, B Zhang, Z Li
IEEE Electron device letters 27 (5), 377-379, 2006
1222006
An ultrafast adaptively biased capacitorless LDO with dynamic charging control
X Ming, Q Li, Z Zhou, B Zhang
IEEE Transactions on Circuits and Systems II: Express Briefs 59 (1), 40-44, 2011
1192011
7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering
Q Zhou, L Liu, A Zhang, B Chen, Y Jin, Y Shi, Z Wang, W Chen, B Zhang
IEEE Electron Device Letters 37 (2), 165-168, 2015
1142015
High reverse blocking and low onset voltage AlGaN/GaN-on-Si lateral power diode with MIS-gated hybrid anode
Q Zhou, Y Jin, Y Shi, J Mou, X Bao, B Chen, B Zhang
IEEE Electron Device Letters 36 (7), 660-662, 2015
1042015
A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer
X Luo, B Zhang, Z Li
Solid-State Electronics 51 (3), 493-499, 2007
1042007
Field enhancement for dielectric layer of high-voltage devices on silicon on insulator
B Zhang, Z Li, S Hu, X Luo
IEEE transactions on electron devices 56 (10), 2327-2334, 2009
1022009
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate Recess
Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...
IEEE Transactions on Electron Devices 63 (2), 614-619, 2016
1012016
High-voltage LDMOS with charge-balanced surface low on-resistance path layer
B Zhang, W Wang, W Chen, Z Li, Z Li
IEEE Electron device letters 30 (8), 849-851, 2009
1002009
An ultralow-power fast-transient capacitor-free low-dropout regulator with assistant push–pull output stage
X Qu, ZK Zhou, B Zhang, ZJ Li
IEEE Transactions on Circuits and Systems II: Express Briefs 60 (2), 96-100, 2013
992013
High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/Figure of Merit
Q Zhou, B Chen, Y Jin, S Huang, K Wei, X Liu, X Bao, J Mou, B Zhang
IEEE Transactions on Electron Devices 62 (3), 776-781, 2015
952015
Ultralow specific on-resistance high-voltage SOI lateral MOSFET
X Luo, J Fan, Y Wang, T Lei, M Qiao, B Zhang, F Udrea
IEEE electron device letters 32 (2), 185-187, 2010
942010
Breakdown-voltage-enhancement technique for RF-based AlGaN/GaN HEMTs with a source-connected air-bridge field plate
G Xie, E Xu, J Lee, N Hashemi, B Zhang, FY Fu, WT Ng
IEEE electron device letters 33 (5), 670-672, 2012
892012
A snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector
H Jiang, B Zhang, W Chen, Z Li, C Liu, Z Rao, B Dong
IEEE Electron device letters 33 (3), 417-419, 2012
872012
Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor
AQ Huang, B Zhang
Solid-State Electronics 44 (2), 325-340, 2000
842000
Системата не може да изпълни операцията сега. Опитайте отново по-късно.
Статии 1–20