| A junctionless nanowire transistor with a dual-material gate H Lou, L Zhang, Y Zhu, X Lin, S Yang, J He, M Chan IEEE transactions on Electron Devices 59 (7), 1829-1836, 2012 | 204 | 2012 |
| Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics M Wu, Y Xiao, Y Zeng, Y Zhou, X Zeng, L Zhang, W Liao InfoMat 3 (4), 362-396, 2021 | 153 | 2021 |
| An analytical charge model for double-gate tunnel FETs L Zhang, X Lin, J He, M Chan IEEE Transactions on Electron Devices 59 (12), 3217-3223, 2012 | 121 | 2012 |
| Zero-mask contact fuse for one-time-programmable memory in standard CMOS processes M Shi, J He, L Zhang, C Ma, X Zhou, H Lou, H Zhuang, R Wang, Y Li, ... IEEE electron device letters 32 (7), 955-957, 2011 | 104 | 2011 |
| Artificial neural network design for compact modeling of generic transistors L Zhang, M Chan Journal of Computational Electronics 16 (3), 825-832, 2017 | 101 | 2017 |
| A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body F Liu, J He, L Zhang, J Zhang, J Hu, C Ma, M Chan IEEE Transactions on Electron Devices 55 (8), 2187-2194, 2008 | 98 | 2008 |
| SPICE modeling of double-gate tunnel-FETs including channel transports L Zhang, M Chan IEEE Transactions on Electron Devices 61 (2), 300-307, 2014 | 90 | 2014 |
| A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors L Zhang, J He, M Chan Electron Devices Meeting (IEDM), 2012 IEEE International, 6.8. 1-6.8. 4, 2012 | 74 | 2012 |
| Analytical modeling of capacitances for GaN HEMTs, including parasitic components A Zhang, L Zhang, Z Tang, X Cheng, Y Wang, KJ Chen, M Chan IEEE Transactions on Electron Devices 61 (3), 755-761, 2014 | 66 | 2014 |
| Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET L Zhang, C Ma, J He, X Lin, M Chan Solid-state electronics 54 (8), 806-808, 2010 | 52 | 2010 |
| A compact model for double-gate heterojunction tunnel FETs Y Dong, L Zhang, X Li, X Lin, M Chan IEEE Transactions on Electron Devices 63 (11), 4506-4513, 2016 | 49 | 2016 |
| Tunneling Field Effect Transistor Technology L Zhang, M Chan Springer International Publishing, 2016 | 48 | 2016 |
| Modeling short-channel effect of elliptical gate-all-around MOSFET by effective radius L Zhang, L Li, J He, M Chan IEEE electron device letters 32 (9), 1188-1190, 2011 | 47 | 2011 |
| A compact model of subthreshold current with source/drain depletion effect for the short-channel junctionless cylindrical surrounding-gate MOSFETs Y Xiao, B Zhang, H Lou, L Zhang, X Lin IEEE Transactions on Electron Devices 63 (5), 2176-2181, 2016 | 45 | 2016 |
| Tunneling contact IGZO TFTs with reduced saturation voltages L Wang, Y Sun, X Zhang, L Zhang, S Zhang, M Chan Applied Physics Letters 110 (15), 152105, 2017 | 41 | 2017 |
| Investigation of LOCOS-and polysilicon-bound diodes for robust electrostatic discharge (ESD) applications Y Li, JJ Liou, JE Vinson, L Zhang IEEE Transactions on Electron Devices 57 (4), 814-819, 2010 | 35 | 2010 |
| A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect Y Xiao, X Lin, H Lou, B Zhang, L Zhang, M Chan IEEE Transactions on Electron Devices 63 (12), 4661-4667, 2016 | 34 | 2016 |
| A compact model of silicon-based nanowire MOSFETs for circuit simulation and design J Yang, J He, F Liu, L Zhang, F Liu, X Zhang, M Chan IEEE transactions on electron devices 55 (11), 2898-2906, 2008 | 34 | 2008 |
| Numerical study on dual material gate nanowire tunnel field-effect transistor A Zhang, J Mei, L Zhang, H He, J He, M Chan Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International …, 2012 | 31 | 2012 |
| Uniaxial strain effects on electron ballistic transport in gate-all-around silicon nanowire MOSFETs L Zhang, H Lou, J He, M Chan IEEE transactions on electron devices 58 (11), 3829-3836, 2011 | 30 | 2011 |
Mansun ChanChair Professor, HKUSTПотвърден имейл адрес: ust.hk