Engineering of a new single-crystal multi-ionic fast and high-light-yield scintillation material (Gd 0.5–Y 0.5) 3 Al 2 Ga 3 O 12: Ce, Mg M Korzhik, V Alenkov, O Buzanov, G Dosovitskiy, A Fedorov, D Kozlov, ...
CrystEngComm 22 (14), 2502-2506, 2020
62 2020 Excitation Transfer Engineering in Ce‐Doped Oxide Crystalline Scintillators by Codoping with Alkali‐Earth Ions E Auffray, R Augulis, A Fedorov, G Dosovitskiy, L Grigorjeva, V Gulbinas, ...
physica status solidi (a) 215 (7), 1700798, 2018
62 2018 Luminescence rise time in self-activated PbWO4 and Ce-doped Gd3Al2Ga3O12 scintillation crystals E Auffray, R Augulis, A Borisevich, V Gulbinas, A Fedorov, M Korjik, ...
Journal of Luminescence 178, 54-60, 2016
60 2016 Subpicosecond luminescence rise time in magnesium codoped GAGG: Ce scintillator G Tamulaitis, A Vaitkevičius, S Nargelas, R Augulis, V Gulbinas, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2017
49 2017 Improvement of the Time Resolution of Radiation Detectors Based on Gd3 Al2 Ga3 O12 Scintillators With SiPM Readout G Tamulaitis, A Vasil’ev, M Korzhik, A Mazzi, A Gola, S Nargelas, ...
IEEE Transactions on Nuclear Science 66 (7), 1879-1888, 2019
47 2019 Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites P Scajev, R Aleksiejunas, S Miasojedovas, S Nargelas, M Inoue, C Qin, ...
The Journal of Physical Chemistry C 121 (39), 21600-21609, 2017
45 2017 Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique S Nargelas, K Jarašiūnas, K Bertulis, V Pačebutas
Applied Physics Letters 98 (8), 2011
39 2011 Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures R Aleksiejūnas, K Gelžinytė, S Nargelas, K Jarašiūnas, M Vengris, ...
Applied Physics Letters 104 (2), 2014
38 2014 Improvement of the timing properties of Ce-doped oxyorthosilicate LYSO scintillating crystals G Tamulaitis, E Auffray, A Gola, M Korzhik, A Mazzi, V Mechinski, ...
Journal of Physics and Chemistry of Solids 139, 109356, 2020
37 2020 Improvement of response time in GAGG: Ce scintillation crystals by magnesium codoping G Tamulatis, G Dosovitskiy, A Gola, M Korjik, A Mazzi, S Nargelas, ...
Journal of Applied Physics 124 (21), 2018
37 2018 Compositional engineering of multicomponent garnet scintillators: towards an ultra-accelerated scintillation response L Martinazzoli, S Nargelas, P Boháček, R Calá, M Dušek, J Rohlíček, ...
Materials Advances 3 (17), 6842-6852, 2022
33 2022 Irradiation effects on Gd3Al2Ga3O12 scintillators prospective for application in harsh irradiation environments E Auffray, G Dosovitskiy, A Fedorov, I Guz, M Korjik, N Kratochwill, ...
Radiation Physics and Chemistry 164, 108365, 2019
30 2019 Measurement of non-equilibrium carriers dynamics in Ce-doped YAG, LuAG and GAGG crystals with and without Mg-codoping MT Lucchini, O Buganov, E Auffray, P Bohacek, M Korjik, D Kozlov, ...
Journal of Luminescence 194, 1-7, 2018
30 2018 Influence of matrix composition and its fluctuations on excitation relaxation and emission spectrum of Ce ions in (Gdx Y1-x) 3Al2Ga3O12: Ce scintillators S Nargelas, Y Talochka, A Vaitkevičius, G Dosovitskiy, O Buzanov, ...
Journal of Luminescence 242, 118590, 2022
28 2022 Ultrafast PWO scintillator for future high energy physics instrumentation M Korzhik, KT Brinkmann, V Dormenev, M Follin, J Houzvicka, D Kazlou, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2022
27 2022 Multipurpose Ce-doped Ba-Gd silica glass scintillator for radiation measurements V Dormenev, A Amelina, E Auffray, KT Brinkmann, G Dosovitskiy, F Cova, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2021
26 2021 Free carrier absorption in self-activated PbWO4 and Ce-doped Y3 (Al0. 25Ga0. 75) 3O12 and Gd3Al2Ga3O12 garnet scintillators E Auffray, M Korjik, MT Lucchini, S Nargelas, O Sidletskiy, G Tamulaitis, ...
Optical Materials 58, 461-465, 2016
20 2016 Timing properties of Ce-doped YAP and LuYAP scintillation crystals M Korzhik, A Gola, J Houžvička, A Mazzi, S Nargelas, S Sýkorová, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2019
19 2019 Impact of diffusivity to carrier recombination rate in nitride semiconductors: from bulk GaN to (In, Ga) N quantum wells R Aleksiejūnas, P Ščajev, S Nargelas, T Malinauskas, A Kadys, ...
Japanese Journal of Applied Physics 52 (8S), 08JK01, 2013
16 2013 Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited R Aleksiejūnas, K Nomeika, O Kravcov, S Nargelas, L Kuritzky, C Lynsky, ...
Physical Review Applied 14 (5), 054043, 2020
15 2020 
Korzhik Mikhail (Korjik Mikhail)(Коржи...Institute for Nuclear Problems, Belarusian State UniversityПотвърден имейл адрес: inp.bsu.by
