In vivo recordings of brain activity using organic transistorsD Khodagholy, T Doublet, P Quilichini, M Gurfinkel, P Leleux, A Ghestem, ...
Nature communications 4 (1), 1575, 2013
1075 2013 High transconductance organic electrochemical transistors D Khodagholy, J Rivnay, M Sessolo, M Gurfinkel, P Leleux, LH Jimison, ...
Nature communications 4 (1), 2133, 2013
948 2013 Highly conformable conducting polymer electrodes for in vivo recordings D Khodagholy, T Doublet, M Gurfinkel, P Quilichini, E Ismailova, P Leleux, ...
Advanced Materials 23 (36), H268, 2011
425 2011 Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ...
IEEE transactions on Electron Devices 55 (8), 1835-1840, 2008
390 2008 Organic electrochemical transistor incorporating an ionogel as a solid state electrolyte for lactate sensing D Khodagholy, VF Curto, KJ Fraser, M Gurfinkel, R Byrne, D Diamond, ...
Journal of Materials Chemistry 22 (10), 4440-4443, 2012
339 2012 Electronic circuit reliability modeling JB Bernstein, M Gurfinkel, X Li, J Walters, Y Shapira, M Talmor
Microelectronics Reliability 46 (12), 1957-1979, 2006
237 2006 Measurement of barrier tissue integrity with an organic electrochemical transistor. LH Jimison, SA Tria, D Khodagholy, M Gurfinkel, E Lanzarini, A Hama, ...
Advanced Materials (Deerfield Beach, Fla.) 24 (44), 5919-5923, 2012
220 2012 Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ...
IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008
156 2008 High speed and high density organic electrochemical transistor arrays D Khodagholy, M Gurfinkel, E Stavrinidou, P Leleux, T Herve, S Sanaur, ...
Applied Physics Letters 99 (16), 2011
127 2011 Time-Dependent Dielectric Breakdown of 4H-SiC/ M Gurfinkel, JC Horst, JS Suehle, JB Bernstein, Y Shapira, KS Matocha, ...
IEEE transactions on device and materials reliability 8 (4), 635-641, 2008
81 2008 Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements HD Xiong, D Heh, M Gurfinkel, Q Li, Y Shapira, C Richter, G Bersuker, ...
Microelectronic Engineering 84 (9-10), 2230-2234, 2007
72 2007 Energy-and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs S Potbhare, N Goldsman, A Akturk, M Gurfinkel, A Lelis, JS Suehle
IEEE Transactions on Electron Devices 55 (8), 2061-2070, 2008
50 2008 Ultra-fast characterization of transient gate oxide trapping in SiC MOSFETs M Gurfinkel, J Suehle, JB Bernstein, Y Shapira, AJ Lelis, D Habersat, ...
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
30 2007 Ultra-fast measurements of VTH instability in SiC MOSFETs due to positive and negative constant bias stress M Gurfinkel, J Suehle, JB Bernstein, Y Shapira, AJ Lelis, D Habersat, ...
2006 IEEE International Integrated Reliability Workshop Final Report, 49-53, 2006
20 2006 Study of hot-carrier-induced photon emission from 90 nm Si MOSFETs M Gurfinkel, M Borenshtein, A Margulis, S Sade, Y Fefer, Y Weizman, ...
Applied surface science 248 (1-4), 62-65, 2005
19 2005 Stress-induced defect generation in HfO2 /SiO2 stacks observed by using charge pumping and low frequency noise measurements HD Xiong, D Heh, S Yang, X Zhu, M Gurfinkel, G Bersuker, DE Ioannou, ...
2008 IEEE International Reliability Physics Symposium, 319-323, 2008
18 2008 Enhanced gate induced drain leakage current in HfO2 MOSFETs due to remote interface trap-assisted tunneling M Gurfinkel, JS Suehle, JB Bernstein, Y Shapira
2006 international electron devices meeting, 1-4, 2006
15 2006 Enhanced gate induced drain leakage current in HfO2 MOSFETs M Gurfinkel, JS Suehle, Y Shapira
Microelectronic engineering 86 (11), 2157-2160, 2009
14 2009 Ion implantation and SiC transistor performance M Gurfinkel, S Potbhare, HD Xiong, JS Suehle, Y Shapira, AJ Lelis, ...
Journal of Applied Physics 105 (8), 2009
13 2009 Time dependence of bias-stress induced threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ...
2007 International Semiconductor Device Research Symposium, 1-2, 2007
11 2007 
George MalliarasPrince Philip Professor of Technology at University of CambridgeПотвърден имейл адрес: cam.ac.uk
