Tania Roy

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2020
Позовавания	5305	3410
h-индекс	36	28
i10-индекс	46	43

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525

20112012201320142015201620172018201920202021202220232024202524 27 36 48 203 272 317 449 484 546 642 693 694 696 137

Публичен достъп

Преглед на всички

26 статии

2 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityПотвърден имейл адрес: vanderbilt.edu
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityПотвърден имейл адрес: vanderbilt.edu
Mahmut TosunPhD Student, UC BerkeleyПотвърден имейл адрес: berkeley.edu
Ali JaveyProfessor of Electrical Engineering and Computer Sciences, UC BerkeleyПотвърден имейл адрес: berkeley.edu
Yevgeniy PuzyrevData & Applied Scientist, MicrosoftПотвърден имейл адрес: microsoft.com
Enxia ZhangUniversity of Central FloridaПотвърден имейл адрес: ucf.edu
Angada SachidASMПотвърден имейл адрес: asm.com
Sujay DesaiPh.D. Student in Electrical Engineering, University of California Berkeley (Past: IIT Bombay)Потвърден имейл адрес: eecs.berkeley.edu
Peter (Peida) ZhaoGraduate Student, UC BerkeleyПотвърден имейл адрес: berkeley.edu
Mark HettickSenior Design Engineer, Precision NeuroscienceПотвърден имейл адрес: berkeley.edu
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyПотвърден имейл адрес: mse.gatech.edu
Matin AmaniUC BerkeleyПотвърден имейл адрес: berkeley.edu
Der-Hsien LienNational Yang Ming Chiao Tung UniversityПотвърден имейл адрес: nctu.edu.tw
Hui FangAssociate Professor, Dartmouth CollegeПотвърден имейл адрес: dartmouth.edu
Bhaswar ChakrabartiAssistant Professor, Indian Institute of Technology MadrasПотвърден имейл адрес: ee.iitm.ac.in
Geun Ho AhnStanford UniversityПотвърден имейл адрес: stanford.edu
Zohreh Razavi HesabiLam ResearchПотвърден имейл адрес: lamresearch.com
Corey JoinerGeorgia Institute of TechnologyПотвърден имейл адрес: gatech.edu
blair tuttlePenn State Erie; The Behrend CollegeПотвърден имейл адрес: psu.edu
Xiao ShenAssociate Professor of Physics, University of MemphisПотвърден имейл адрес: memphis.edu

Следене

Tania Roy

Duke University

Потвърден имейл адрес: duke.edu - Начална страница

Device physics nanotechnology 2D materials GaN reliability


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Field-effect transistors built from all two-dimensional material components T Roy, M Tosun, JS Kang, AB Sachid, SB Desai, M Hettick, CC Hu, ... ACS nano 8 (6), 6259-6264, 2014	800	2014
Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors T Roy, M Tosun, X Cao, H Fang, DH Lien, P Zhao, YZ Chen, YL Chueh, ... ACS nano 9 (2), 2071-2079, 2015	720	2015
The Role of Graphene and Other 2D Materials in Solar Photovoltaics S Das, D Pandey, J Thomas, T Roy Advanced Materials 31 (1), 1802722, 2019	455	2019
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures T Roy, M Tosun, M Hettick, GH Ahn, C Hu, A Javey Applied Physics Letters 108 (8), 083111, 2016	328	2016
Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment M Tosun, L Chan, M Amani, T Roy, GH Ahn, P Taheri, C Carraro, JW Ager, ... ACS nano 10 (7), 6853-6860, 2016	263	2016
Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice B Pradhan, S Das, J Li, F Chowdhury, J Cherusseri, D Pandey, D Dev, ... Science Advances 6 (7), eaay5225, 2020	249	2020
Engineering light outcoupling in 2D materials DH Lien, JS Kang, M Amani, K Chen, M Tosun, HP Wang, T Roy, ... Nano letters 15 (2), 1356-1361, 2015	187	2015
Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ... Journal of Applied Physics 109 (3), 034501, 2011	163	2011
Process dependence of proton-induced degradation in GaN HEMTs T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ... IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010	114	2010
Artificial Neuron using Vertical MoS 2/Graphene Threshold Switching Memristors H Kalita, A Krishnaprasad, N Choudhary, S Das, D Dev, Y Ding, L Tetard, ... Scientific reports 9 (1), 1-8, 2019	106	2019
A leaf-inspired photon management scheme using optically tuned bilayer nanoparticles for ultra-thin and highly efficient photovoltaic devices S Das, MJ Hossain, SF Leung, A Lenox, Y Jung, K Davis, JH He, T Roy Nano Energy 58, 47-56, 2019	104	2019
Novel mesoporous electrode materials for symmetric, asymmetric and hybrid supercapacitors J Cherusseri, KS Kumar, N Choudhary, N Nagaiah, Y Jung, T Roy, ... Nanotechnology 30 (20), 202001, 2019	99	2019
Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011	99	2011
2D MoS₂-Based Threshold Switching Memristor for Artificial Neuron D Dev, A Krishnaprasad, MS Shawkat, Z He, S Das, D Fan, HS Chung, ... IEEE Electron Device Letters 41 (6), 936-939, 2020	98	2020
Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition MM Islam, A Krishnaprasad, D Dev, R Martinez-Martinez, V Okonkwo, ... ACS nano, 2022	82	2022
Optoelectronic synapse using monolayer MoS 2 field effect transistors MM Islam, D Dev, A Krishnaprasad, L Tetard, T Roy Scientific reports 10 (1), 1-9, 2020	82	2020
Artificial Nociceptor Using 2D MoS₂ Threshold Switching Memristor D Dev, MS Shawkat, A Krishnaprasad, Y Jung, T Roy IEEE Electron Device Letters 41 (9), 1440-1443, 2020	70	2020
Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe₂ Layers by Plasma-Driven Chalcogen Defect Engineering MS Shawkat, J Gil, SS Han, TJ Ko, M Wang, D Dev, J Kwon, GH Lee, ... ACS Applied Materials & Interfaces 12 (12), 14341-14351, 2020	70	2020
Single event mechanisms in 90 nm triple-well CMOS devices T Roy, AF Witulski, RD Schrimpf, ML Alles, LW Massengill IEEE Transactions on Nuclear Science 55 (6), 2948-2956, 2008	68	2008
Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions T Roy, L Liu, S de la Barrera, B Chakrabarti, ZR Hesabi, CA Joiner, ... Applied Physics Letters 104 (12), 123506, 2014	67	2014

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