| Highly thermal-stable ferromagnetism by a natural composite T Ma, J Gou, S Hu, X Liu, C Wu, S Ren, H Zhao, A Xiao, C Jiang, X Ren, ... Nature Communications 8 (1), 13937, 2017 | 80 | 2017 |
| Structural origin for the local strong anisotropy in melt-spun Fe-Ga-Tb: tetragonal nanoparticles T Ma, S Hu, G Bai, M Yan, Y Lu, H Li, X Peng, X Ren Applied Physics Letters 106 (11), 2015 | 50 | 2015 |
| Tailoring magnetostriction sign of ferromagnetic composite by increasing magnetic field strength J Gou, X Liu, K Wu, Y Wang, S Hu, H Zhao, A Xiao, T Ma, M Yan Applied Physics Letters 109 (8), 2016 | 45 | 2016 |
| Enhanced damping capacity of ferromagnetic Fe-Ga alloys by introducing structural defects R Qiao, J Gou, T Yang, Y Zhang, F Liu, S Hu, T Ma Journal of Materials Science & Technology 84, 173-181, 2021 | 25 | 2021 |
| Characterization of prismatic slip in PVT-grown AlN crystals S Hu, H Fang, Y Liu, H Peng, Q Cheng, Z Chen, R Dalmau, J Britt, ... Journal of Crystal Growth 584, 126548, 2022 | 10 | 2022 |
| Effect of annealing conditions on recovery of lattice damage in a high-energy-implanted 4H-SiC superjunction PIN diode Z Chen, Y Liu, H Peng, Q Cheng, S Hu, B Raghothamachar, M Dudley, ... ECS Journal of Solid State Science and Technology 11 (6), 065003, 2022 | 8 | 2022 |
| Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations Q Cheng, Z Chen, S Hu, Y Liu, B Raghothamachar, M Dudley Materials Science in Semiconductor Processing 174, 108207, 2024 | 6 | 2024 |
| Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals S Hu, Y Liu, Q Cheng, Z Chen, X Tong, B Raghothamachar, M Dudley Journal of Crystal Growth 628, 127542, 2024 | 6 | 2024 |
| Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms ZY Chen, HY Peng, Y Liu, QY Cheng, S Hu, B Raghothamachar, ... Materials Science Forum 1062, 361-365, 2022 | 6 | 2022 |
| Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography Y Liu, Z Chen, S Hu, H Peng, Q Cheng, B Raghothamachar, M Dudley Journal of Crystal Growth 583, 126559, 2022 | 6 | 2022 |
| Characterization of 4H-SiC lattice damage after novel high energy ion implantation Z Chen, Y Liu, H Peng, T Ailihumaer, Q Cheng, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 75, 2021 | 6 | 2021 |
| Microstructure analysis of GaN epitaxial layers during ion implantation using synchrotron X-ray topography Y Liu, H Peng, Z Chen, T Ailihumaer, Q Cheng, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 113, 2021 | 6 | 2021 |
| Effective penetration depth investigation for frank type dislocation (deflected TSDs/TMDs) on grazing incidence synchrotron x-ray topographs of 4H-SiC wafers QY Cheng, HY Peng, ZY Chen, S Hu, Y Liu, B Raghothamachar, ... Defect and Diffusion Forum 426, 57-64, 2023 | 5 | 2023 |
| Analysis of basal plane dislocation motion induced by P+ Ion implantation using synchrotron X-ray topography ZY Chen, Y Liu, HY Peng, QY Cheng, S Hu, B Raghothamachar, ... Defect and Diffusion Forum 426, 71-78, 2023 | 4 | 2023 |
| Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers QY Cheng, HY Peng, S Hu, ZY Chen, Y Liu, B Raghothamachar, ... Materials Science Forum 1062, 366-370, 2022 | 4 | 2022 |
| Analysis of dislocation contrast in synchrotron grazing-incidence x-ray topographs and ray-tracing simulation in off-axis 4h-sic crystals T Ailihumaer, H Peng, Y Liu, Q Cheng, Z Chen, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 157, 2021 | 4 | 2021 |
| Synchrotron X-ray Topography Characterization of Commercial GaN Substrates for Power Electronic Applications Y Liu, S Hu, H Peng, T Ailihumaer, B Raghothamachar, M Dudley ECS Transactions 98 (6), 21, 2020 | 4 | 2020 |
| Characterization of prismatic slip in SiC crystals by chemical etching method S Hu, S Fang, Y Liu, QY Cheng, HY Peng, ZY Chen, YH Gao, C Gao, ... Materials Science Forum 1089, 45-50, 2023 | 3 | 2023 |
| Application of synchrotron X-ray topography to characterization of ion implanted GaN epitaxial layers for the development of vertical power devices Y Liu, H Peng, Z Chen, T Ailihuamaer, S Hu, B Raghothamachar, ... Mrs Advances 6, 450-455, 2021 | 3 | 2021 |
| Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography Z Chen, Y Liu, Q Cheng, S Hu, B Raghothamachar, M Dudley Journal of Crystal Growth 627, 127535, 2024 | 2 | 2024 |
