Continuous analytic IV model for surrounding-gate MOSFETs D Jimenez, B Iniguez, J Sune, LF Marsal, J Pallares, J Roig, D Flores
IEEE Electron Device Letters 25 (8), 571-573, 2004
355 2004 Explicit continuous model for long-channel undoped surrounding gate MOSFETs B Iniguez, D Jimenez, J Roig, HA Hamid, LF Marsal, J Pallarès
IEEE Transactions on Electron Devices 52 (8), 1868-1873, 2005
265 2005 Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs H Abd El Hamid, B Iñíguez, JR Guitart
IEEE transactions on electron devices 54 (3), 572-579, 2007
184 2007 Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs H Abd El Hamid, JR Guitart, B Iñíguez
IEEE Transactions on Electron Devices 54 (6), 1402-1408, 2007
136 2007 An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric P Moens, C Liu, A Banerjee, P Vanmeerbeek, P Coppens, H Ziad, ...
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
127 2014 Explicit analytical charge and capacitance models of undoped double-gate MOSFETs O Moldovan, D Jimenez, JR Guitart, FA Chaves, B Iniguez
IEEE Transactions on Electron Devices 54 (7), 1718-1724, 2007
109 2007 Analytical switching loss model for superjunction MOSFET with capacitive nonlinearities and displacement currents for DC–DC power converters I Castro, J Roig, R Gelagaev, B Vlachakis, F Bauwens, DG Lamar, ...
IEEE Transactions on Power Electronics 31 (3), 2485-2495, 2015
97 2015 Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs M Fernández, X Perpina, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ...
IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017
96 2017 A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs H Abd El Hamid, JR Guitart, V Kilchytska, D Flandre, B Iñiguez
IEEE transactions on electron devices 54 (9), 2487-2496, 2007
78 2007 Origin of Anomalous J Roig, F Bauwens
IEEE Transactions on Electron Devices 62 (9), 3092-3094, 2015
67 2015 P-GaN HEMTs drain and gate current analysis under short-circuit M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack
IEEE Electron Device Letters 38 (4), 505-508, 2017
64 2017 Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs O Moldovan, B Iñiguez, D Jiménez, J Roig
IEEE transactions on electron devices 54 (1), 162-165, 2006
64 2006 Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET H Abd-Elhamid, B Iniguez, D Jiménez, J Roig, J Pallares, LF Marsal
Solid-state electronics 50 (5), 805-812, 2006
44 2006 Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Microelectronics Reliability 45 (3-4), 493-498, 2005
44 2005 GD Zulauf, J Roig-Guitart, JD Plummer, JM Rivas-Davila
IEEE Transactions on Electron Devices 66 (1), 578-584, 2018
41 2018 A numerical study of field plate configurations in RF SOI LDMOS transistors I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Solid-State Electronics 50 (2), 155-163, 2006
40 2006 Study of novel techniques for reducing self-heating effects in SOI power LDMOS J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán
Solid-State Electronics 46 (12), 2123-2133, 2002
40 2002 Monolithic integration of a 5-MHz GaN half-bridge in a 200-V GaN-on-SOI process: Programmable dv/dt control and floating high-voltage level-shifter WL Jiang, SK Murray, MS Zaman, H De Vleeschouwer, J Roig, P Moens, ...
2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 728-734, 2021
35 2021 An Investigation into the Causes of COSS Losses in GaN-on-Si HEMTs J Zhuang, G Zulauf, J Roig, JD Plummer, J Rivas-Davila
2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL), 1-7, 2019
31 2019 Origins of Soft-Switching C oss Losses in SiC Power MOSFETs and Diodes for Resonant Converter Applications Z Tong, J Roig-Guitart, T Neyer, JD Plummer, JM Rivas-Davila
IEEE journal of emerging and selected topics in power electronics 9 (4 …, 2020
30 2020 
David FloresInvestigador Científico CSICПотвърден имейл адрес: imb-cnm.csic.es
