Handbook for III-V high electron mobility transistor technologies D Nirmal, J Ajayan CRC Press, 2019 | 46 | 2019 |
Implementation of total productive maintenance lean tool to reduce lead time-A case study V Ramakrishnan, S Nallusamy International Journal of Mechanical Engineering and Technology 8 (12), 295-306, 2017 | 42 | 2017 |
Implementation of lean manufacturing in Indian SMEs-A case study V Ramakrishnan, J Jayaprakash, C Elanchezhian, BV Ramnath Materials Today: Proceedings 16, 1244-1250, 2019 | 40 | 2019 |
A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs PS Dhanaselvam, NB Balamurugan, VN Ramakrishnan Microelectronics Journal 44 (12), 1159-1164, 2013 | 30 | 2013 |
Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications P Murugapandiyan, A Mohanbabu, VR Lakshmi, VN Ramakrishnan, ... Journal of Science: Advanced Materials and Devices 5 (2), 192-198, 2020 | 26 | 2020 |
Soft error study in double gated FinFET-based SRAM cells with simultaneous and independent driven gates VN Ramakrishnan, R Srinivasan Microelectronics Journal 43 (11), 888-893, 2012 | 26 | 2012 |
Simultaneous estimation of principal thermal conductivities of an anisotropic composite medium: an inverse analysis S Chanda, C Balaji, SP Venkateshan, A Ambirajan, V Ramakrishnan Journal of heat transfer 135 (2), 021301, 2013 | 25 | 2013 |
Optimization of production process and machining time in CNC cell through the execution of different lean tools V Ramakrishnan, S Nallusamy International Journal of Applied Engineering Research 12 (23), 13295-13302, 2017 | 18 | 2017 |
Performance analysis of germanium-silicon vertical tunnel field-effect transistors (Ge-Si-VTFETs) for analog/RF applications K Ramkumar, VN Ramakrishnan Silicon 14 (16), 10603-10612, 2022 | 15 | 2022 |
Radiation effects on memristor-based non-volatile SRAM cells HM Vijay, VN Ramakrishnan Journal of Computational Electronics 17, 279-287, 2018 | 14 | 2018 |
Study on lean tools implementation in various Indian small and medium scale manufacturing industries V Ramakrishnan, S Nallusamy, M Rajaram Narayanan International Journal of Mechanical and Production Engineering Research and …, 2018 | 13 | 2018 |
Analysis of quantum capacitance on different dielectrics and its dependence on threshold voltage of CNTFET SR Shailendra, VN Ramakrishnan 2017 International Conference on Nextgen Electronic Technologies: Silicon to …, 2017 | 12 | 2017 |
Durability of cement mortar made with different concentrations of bacteria V Ramakrishnan, SS Bang, N Srinivasan, KP Ramesh Proc. 25th Int. Conf. Cement Microscopy, Richmond, Virginia, 2003 | 12 | 2003 |
Pressure sensors using si/zno heterojunction diode PS Dhanaselvam, DS Kumar, VN Ramakrishnan, K Ramkumar, ... Silicon 14 (8), 4121-4127, 2022 | 11 | 2022 |
Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle C Usha, P Vimala, K Ramkumar, VN Ramakrishnan Journal of Computational Electronics, 1-10, 2022 | 11 | 2022 |
Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance S Nilamani, P Chitra, VN Ramakrishnan Microelectronics Reliability 82, 11-19, 2018 | 11 | 2018 |
Proposed inventory management model to improve the supply chain efficiency and surplus in textile industry DSL Kumar, S Nallusamy, V Ramakrishnan Technology 9 (5), 675-686, 2018 | 11 | 2018 |
Gate and drain SEU sensitivity of sub-20-nm FinFET-and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation S Nilamani, VN Ramakrishnan Journal of Computational Electronics 16, 74-82, 2017 | 11 | 2017 |
Application of memristors in active filters S Vishnu, SA Saji, R Rohit, VN Ramakrishnan 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS …, 2016 | 11 | 2016 |
Vertical GaN reverse trench-gate power MOSFET and DC-DC converter NK Jaiswal, VN Ramakrishnan Transactions on Electrical and Electronic Materials 22, 363-371, 2021 | 10 | 2021 |