| Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide VK Sangwan*, HS Lee*, H Bergeron, I Balla, ME Beck, KS Chen, ... Nature 554 (7693), 500, 2018 | 937 | 2018 |
| Dual‐Gated MoS2 Memtransistor Crossbar Array HS Lee, VK Sangwan, WAG Rojas, H Bergeron, HY Jeong, J Yuan, K Su, ... Advanced Functional Materials 30 (45), 2003683, 2020 | 134 | 2020 |
| A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3 HS Lee, SG Choi, HH Park, MJ Rozenberg Scientific reports 3 (1), 1704, 2013 | 102 | 2013 |
| Mott-transition-based RRAM Y Wang, KM Kang, M Kim, HS Lee, R Waser, D Wouters, R Dittmann, ... Materials today 28, 63-80, 2019 | 81 | 2019 |
| Solution-processed layered gallium telluride thin-film photodetectors J Kang, VK Sangwan, HS Lee, X Liu, MC Hersam ACS Photonics 5 (10), 3996-4002, 2018 | 72 | 2018 |
| Improved Performance of Organic Light Emitting Diodes Fabricated on Al-Doped ZnO Anodes Incorporating a Homogeneous Al-Doped ZnO Buffer Layer Grown by Atomic Layer Deposition YJ Choi, SC Gong, CS Park, HS Lee, JG Jang, HJ Chang, GY Yeom, ... ACS applied materials & interfaces, 2013 | 68 | 2013 |
| Sodium‐doped titania self‐rectifying memristors for crossbar array neuromorphic architectures SE Kim, JG Lee, L Ling, SE Liu, HK Lim, VK Sangwan, MC Hersam, ... Advanced Materials 34 (6), 2106913, 2022 | 58 | 2022 |
| Filamentary and interface-type memristors based on tantalum oxide for energy-efficient neuromorphic hardware M Kim, MA Rehman, D Lee, Y Wang, DH Lim, MF Khan, H Choi, QY Shao, ... ACS applied materials & interfaces 14 (39), 44561-44571, 2022 | 55 | 2022 |
| Reconfigurable MoS2 Memtransistors for Continuous Learning in Spiking Neural Networks J Yuan, SE Liu, A Shylendra, WA Gaviria Rojas, S Guo, H Bergeron, S Li, ... Nano letters 21 (15), 6432-6440, 2021 | 54 | 2021 |
| Band Structure Analysis of La0.7Sr0.3MnO3 Perovskite Manganite Using a Synchrotron HS Lee, HH Park Advances in Condensed Matter Physics 2015 (1), 746475, 2015 | 42 | 2015 |
| Manganite-based memristive heterojunction with tunable non-linear I–V characteristics HS Lee, HH Park, MJ Rozenberg Nanoscale 7 (15), 6444-6450, 2015 | 34 | 2015 |
| Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0. 7Sr0. 3MnO3 thin films HS Lee, CS Park, HH Park Applied Physics Letters 104 (19), 2014 | 34 | 2014 |
| Visualizing thermally activated memristive switching in percolating networks of solution‐processed 2D semiconductors VK Sangwan, SV Rangnekar, J Kang, J Shen, HS Lee, D Lam, J Shen, ... Advanced Functional Materials 31 (52), 2107385, 2021 | 31 | 2021 |
| Linear and symmetric Li-based composite memristors for efficient supervised learning SM Kim, S Kim, L Ling, SE Liu, S Jin, YM Jung, M Kim, HH Park, ... ACS applied materials & interfaces 14 (4), 5673-5681, 2022 | 27 | 2022 |
| Non-laminated growth of chlorine-doped zinc oxide films by atomic layer deposition at low temperatures YJ Choi, KM Kang, HS Lee, HH Park Journal of Materials Chemistry C 3 (32), 8336-8343, 2015 | 25 | 2015 |
| Ferroelectric tunnel junction for dense cross-point arrays HS Lee, W Han, HY Chung, M Rozenberg, K Kim, Z Lee, GY Yeom, ... ACS applied materials & interfaces 7 (40), 22348-22354, 2015 | 24 | 2015 |
| Piezoelectric transducers on curved dispersive bending wave and poke-charged touch screens H Hoshyarmanesh, N Nehzat, M Salehi, M Ghodsi, HS Lee, HH Park Materials and Manufacturing Processes 29 (7), 870-876, 2014 | 19 | 2014 |
| Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition WS Kim, JK Yang, CK Lee, HS Lee, HH Park Thin Solid Films 517 (2), 506-509, 2008 | 18 | 2008 |
| The effect of Sr concentration on resistive switching properties of La1− xSrxMnO3 films SG Choi, HS Lee, H Choi, SW Chung, HH Park Thin Solid Films 529, 352-355, 2013 | 17 | 2013 |
| Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition M Kim, Y Wang, D Kim, Q Shao, HS Lee, HH Park APL Materials 10 (3), 2022 | 16 | 2022 |
Hyung-Ho ParkYonsei UniversityCorreu electrònic verificat a yonsei.ac.kr
