Logic gates based on neuristors made from two-dimensional materials H Chen, X Xue, C Liu, J Fang, Z Wang, J Wang, DW Zhang, W Hu, P Zhou
Nature Electronics 4 (6), 399-404, 2021
135 2021 A 0.13 µm 8 Mb Logic-Based Cu X Xue, W Jian, J Yang, F Xiao, G Chen, S Xu, Y Xie, Y Lin, R Huang, ...
IEEE Journal of solid-state circuits 48 (5), 1315-1322, 2013
56 2013 A 0.13µm 8Mb logic based Cux Siy O resistive memory with self-adaptive yield enhancement and operation power reduction XY Xue, WX Jian, JG Yang, FJ Xiao, G Chen, XL Xu, YF Xie, YY Lin, ...
2012 Symposium on VLSI Circuits (VLSIC), 42-43, 2012
46 2012 24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference J Yang, X Xue, X Xu, Q Wang, H Jiang, J Yu, D Dong, F Zhang, H Lv, ...
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 336-338, 2021
40 2021 A physically unclonable function with BER< 0.35% for secure chip authentication using write speed variation of RRAM J Yang, X Li, T Wang, X Xue, Z Hong, Y Wang, DW Zhang, H Lu
2018 48th European Solid-State Device Research Conference (ESSDERC), 54-57, 2018
27 2018 A small area and low power true random number generator using write speed variation of oxidebased RRAM for IoT security application J Yang, Y Lin, Y Fu, X Xue, BA Chen
2017 IEEE international symposium on circuits and systems (ISCAS), 1-4, 2017
27 2017 A logic resistive memory chip for embedded key storage with physical security Y Xie, X Xue, J Yang, Y Lin, Q Zou, R Huang, J Wu
IEEE Transactions on Circuits and Systems II: Express Briefs 63 (4), 336-340, 2015
26 2015 Reliability significant improvement of resistive switching memory by dynamic self-adaptive write method YL Song, Y Meng, XY Xue, FJ Xiao, Y Liu, B Chen, YY Lin, QT Zou, ...
2013 Symposium on VLSI Technology, T102-T103, 2013
26 2013 Nbssn: A neuromorphic binary single-spike neural network for efficient edge intelligence Z Shen, F Tian, J Jiang, C Fang, X Xue, J Yang, M Sawan
2023 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2023
25 2023 All-electrical control of compact SOT-MRAM: Toward highly efficient and reliable non-volatile in-memory computing H Lin, X Luo, L Liu, D Wang, X Zhao, Z Wang, X Xue, F Zhang, G Xing
Micromachines 13 (2), 319, 2022
25 2022 High-density 3-D stackable crossbar 2D2R nvTCAM with low-power intelligent search for fast packet forwarding in 5G applications K Zhou, X Xue, J Yang, X Xu, H Lv, M Jing, J Li, X Zeng, M Liu
IEEE Journal of Solid-State Circuits 56 (3), 988-1000, 2020
19 2020 A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneaking Current Suppression and Compensation Techniques J Yang, X Xue, X Xu, H Lv, F Zhang, X Zeng, MF Chang, M Liu
2020 IEEE Symposium on VLSI Circuits, 1-2, 2020
19 2020 A low cost and high reliability true random number generator based on resistive random access memory J Yang, J Xu, B Wang, X Xue, R Huang, Q Zhou, J Wu, Y Lin
2015 IEEE 11th International Conference on ASIC (ASICON), 1-4, 2015
18 2015 A 3D RRAM using stackable 1TXR memory cell for high density application J Zhang, Y Ding, X Xue, Y Wu, Y Xie, Y Lin
2009 International Conference on Communications, Circuits and Systems, 917-920, 2009
18 2009 A 9Mb HZO-Based Embedded FeRAM with 1012 -Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier J Yang, Q Luo, X Xue, H Jiang, Q Wu, Z Han, Y Cao, Y Han, C Dou, H Lv, ...
2023 IEEE International Solid-State Circuits Conference (ISSCC), 1-3, 2023
17 2023 Anisotropic mass transport enables distinct synaptic behaviors on 2D material surface Z Yang, Z Yang, L Liu, X Li, J Li, C Xiong, X Mai, H Tong, Y Li, KH Xue, ...
Materials Today Electronics 5, 100047, 2023
15 2023 Low-power variation-tolerant nonvolatile lookup table design X Xue, J Yang, Y Lin, R Huang, Q Zou, J Wu
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (3 …, 2015
15 2015 Novel RRAM programming technology for instant-on and high-security FPGAs X Xue, W Jian, Y Xie, Q Dong, R Yuan, Y Lin
2011 9th IEEE International Conference on ASIC, 291-294, 2011
15 2011 An energy efficient computing-in-memory accelerator with 1T2R cell and fully analog processing for edge AI applications K Zhou, C Zhao, J Fang, J Jiang, D Chen, Y Huang, M Jing, J Han, H Tian, ...
IEEE Transactions on Circuits and Systems II: Express Briefs 68 (8), 2932-2936, 2021
14 2021 A machine-learning-resistant 3D PUF with 8-layer stacking vertical RRAM and 0.014% bit error rate using in-cell stabilization scheme for IoT security applications J Yang, D Lei, D Chen, J Li, H Jiang, Q Ding, Q Luo, X Xue, H Lv, X Zeng, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2020
14 2020 
Jianguo YangInstitute of Microelectronics of the Chinese Academy of SciencesCorreu electrònic verificat a ime.ac.cn