| A stackable cross point phase change memory DC Kau, S Tang, IV Karpov, R Dodge, B Klehn, JA Kalb, J Strand, A Diaz, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 382 | 2009 |
| Fundamental drift of parameters in chalcogenide phase change memory IV Karpov, M Mitra, D Kau, G Spadini, YA Kryukov, VG Karpov Journal of Applied Physics 102 (12), 2007 | 220 | 2007 |
| Nucleation switching in phase change memory VG Karpov, YA Kryukov, SD Savransky, IV Karpov Applied physics letters 90 (12), 2007 | 204 | 2007 |
| Electrical conduction in chalcogenide glasses of phase change memory M Nardone, M Simon, IV Karpov, VG Karpov Journal of Applied Physics 112 (7), 2012 | 199 | 2012 |
| Field-induced nucleation in phase change memory VG Karpov, YA Kryukov, IV Karpov, M Mitra Physical Review B—Condensed Matter and Materials Physics 78 (5), 052201, 2008 | 162 | 2008 |
| Wurtzite and fluorite ferroelectric materials for electronic memory KH Kim, I Karpov, RH Olsson III, D Jariwala Nature Nanotechnology 18 (5), 422-441, 2023 | 129 | 2023 |
| Evidence of field induced nucleation in phase change memory IV Karpov, M Mitra, D Kau, G Spadini, YA Kryukov, VG Karpov Applied Physics Letters 92 (17), 2008 | 122 | 2008 |
| A unified model of nucleation switching M Nardone, VG Karpov, DCS Jackson, IV Karpov Applied Physics Letters 94 (10), 2009 | 107 | 2009 |
| Energy-efficient set write of phase change memory with switch DC Kau, J Kalb, E Karpov, G Spadini US Patent 8,385,100, 2013 | 106 | 2013 |
| Phase change materials S Raoux, D Ielmini, M Wuttig, I Karpov MRS bulletin 37, 118-123, 2012 | 104 | 2012 |
| Phase change memory with damascene memory element IV Karpov, CC Kuo, Y Kim, F Pellizzer US Patent 7,534,625, 2009 | 88 | 2009 |
| Isolating phase change memories with schottky diodes and guard rings I Karpov, M Gill US Patent 6,995,446, 2006 | 84 | 2006 |
| Electrostatic theory of metal whiskers VG Karpov Physical review applied 1 (4), 044001, 2014 | 78 | 2014 |
| Phase change memory with damascene memory element IV Karpov, CC Kuo, Y Kim, F Pellizzer US Patent 7,135,696, 2006 | 75 | 2006 |
| Non-volatile RRAM embedded into 22FFL FinFET technology O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ... 2019 Symposium on VLSI Technology, T230-T231, 2019 | 73 | 2019 |
| Dual resistance heater for phase change devices and manufacturing method thereof Y Kim, IV Karpov, CC Kuo, G Atwood, MS Marangon, T Lowrey US Patent 7,880,123, 2011 | 73 | 2011 |
| Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ... APL Materials 11 (8), 2023 | 70 | 2023 |
| Method and apparatus to reset a phase change memory and switch (PCMS) memory cell EV Karpov, G Spadini US Patent 8,462,537, 2013 | 67 | 2013 |
| Impact of oxygen vacancy content in ferroelectric HZO films on the device performance T Mittmann, M Materano, SC Chang, I Karpov, T Mikolajick, U Schroeder 2020 IEEE International Electron Devices Meeting (IEDM), 18.4. 1-18.4. 4, 2020 | 63 | 2020 |
| Self-heating phase change memory cell architecture SD Savransky, I Karpov US Patent 8,377,741, 2013 | 56 | 2013 |
