Michael Shur

Citada per

	Totes	Des de 2020
Citacions	79971	16421
Índex h	124	56
Índex i10	1016	402

4100

2050

1025

3075

1986198719881989199019911992199319941995199619971998199920002001200220032004200520062007200820092010201120122013201420152016201720182019202020212022202320242025326 396 295 434 435 458 446 487 416 588 742 946 1019 1179 1265 1246 1660 1845 2049 2238 2329 2307 2660 2688 2787 2895 2893 3327 3259 3360 3507 3551 3611 4087 4071 3715 3007 2822 2613 188

Accés públic

Mostra-ho tot

63 articles

54 articles

disponibles

no disponibles

Es basa en els requisits de les agències que proporcionen el finançament

Coautors

Remis GaskaUVTON, Inc.Correu electrònic verificat a uvton.com
Grigory SiminUniversity of South CarolinaCorreu electrònic verificat a engr.sc.edu
Max ShatalovCVD Equipment CorporationCorreu electrònic verificat a cvdequipment.com
Taiichi OtsujiRIEC, Tohoku UniversityCorreu electrònic verificat a riec.tohoku.ac.jp
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences and Technical University WARSAW POLANDCorreu electrònic verificat a unipress.waw.pl
Maxim RyzhiiS. Associate Professor, University of AizuCorreu electrònic verificat a u-aizu.ac.jp
Nezih PalaElectrical & Computer Engineering, Florida International UniversityCorreu electrònic verificat a fiu.edu
Vladimir MitinSUNY Distinguished Professor, University at BuffaloCorreu electrònic verificat a buffalo.edu
Alexander A. BalandinDistinguished Professor of Materials Science and Engineering, UCLACorreu electrònic verificat a seas.ucla.edu
Kwyro LeeProfessor of Electrical Engineering, KAISTCorreu electrònic verificat a kaist.ac.kr
Vyacheslav PopovKotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)Correu electrònic verificat a soire.renet.ru
Dmitry VekslerHRL LaboratoryCorreu electrònic verificat a hrl.com
Qhalid FareedTexas InstrumentsCorreu electrònic verificat a ti.com
M.I. DyakonovLaboratoire Charles Coulomb (L2C), Université Montpellier -CNRSCorreu electrònic verificat a umontpellier.fr
Guanxiong LiuUniversity of California RiversideCorreu electrònic verificat a ee.ucr.edu
Juras MickeviciusVilnius UniversityCorreu electrònic verificat a ff.vu.lt
Frédéric TeppeDirector of research - CNRS - Laboratoire Charles CoulombCorreu electrònic verificat a umontpellier.fr
Mikhail GaevskiCVD Equipment CorporationCorreu electrònic verificat a CVDEquipment.com
Hadis MorkoçVirginia Commonwealth UniversityCorreu electrònic verificat a vcu.edu
Irina KhmyrovaUniversity of AizuCorreu electrònic verificat a u-aizu.ac.jp

Segueix

Michael Shur

Patricia W. and C. Sheldon Roberts Professor, Rensselaer Polytechnic

Correu electrònic verificat a rpi.edu - Pàgina d'inici

semiconductors


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe ME Levinshtein, SL Rumyantsev, MS Shur John Wiley & Sons, 2001	2199	2001
Handbook series on semiconductor parameters M Levinshtein World Scientific, 1997	2044*	1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current M Dyakonov, M Shur Physical review letters 71 (15), 2465, 1993	1501	1993
Physics of semiconductor devices M Shur, J Singh Physics Today 43 (10), 98-99, 1990	1355	1990
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid M Dyakonov, M Shur IEEE transactions on electron devices 43 (3), 380-387, 2002	1302	2002
GaAs devices and circuits MS Shur Springer Science & Business Media, 2013	1045	2013
Introduction to solid-state lighting A Žukauskas, M Shur, R Gaska (No Title), 2002	993	2002
Threshold switching in chalcogenide‐glass thin films D Adler, MS Shur, M Silver, SR Ovshinsky Journal of Applied Physics 51 (6), 3289-3309, 1980	835	1980
Sensitive skin V Lumelsky, MS Shur, S Wagner, M Ding World Scientific, 2000	689	2000
Transient electron transport in wurtzite GaN, InN, and AlN BE Foutz, SK O’Leary, MS Shur, LF Eastman Journal of applied physics 85 (11), 7727-7734, 1999	688	1999
Solid-state lighting: toward superior illumination MS Shur, R Zukauskas Proceedings of the IEEE 93 (10), 1691-1703, 2005	643	2005
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991	603	1991
Physics of amorphous silicon based alloy field‐effect transistors M Shur, M Hack Journal of Applied Physics 55 (10), 3831-3842, 1984	597	1984
An experimental study of contact effects in organic thin film transistors DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur Journal of Applied Physics 100 (2), 2006	546	2006
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	538	2012
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur Applied Physics Letters 65 (9), 1121-1123, 1994	534	1994
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid MI Dyakonov, MS Shur IEEE Transactions on Electron Devices 43 (10), 1640-1645, 1996	518	1996
Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002	503	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	481	2000
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN UV Bhapkar, MS Shur Journal of Applied Physics 82 (4), 1649-1655, 1997	475	1997

En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.

Articles 1–20

Cites per any

Cites duplicades

Cites combinades

Addició de coautorsCoautors

Segueix

Citada per

Coautors