| An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations Y Wang, H Tang, Y Xie, X Chen, S Ma, Z Sun, Q Sun, L Chen, H Zhu, ... Nature communications 12 (1), 3347, 2021 | 89 | 2021 |
| Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning X Chen, Y Xie, Y Sheng, H Tang, Z Wang, Y Wang, Y Wang, F Liao, J Ma, ... Nature Communications 12 (1), 5953, 2021 | 76 | 2021 |
| An artificial neural network chip based on two-dimensional semiconductor S Ma, T Wu, X Chen, Y Wang, H Tang, Y Yao, Y Wang, Z Zhu, J Deng, ... Science bulletin 67 (3), 270-277, 2022 | 43 | 2022 |
| High-speed FPGA-based phase measuring profilometry architecture G Zhan, H Tang, K Zhong, Z Li, Y Shi, C Wang Optics express 25 (9), 10553-10564, 2017 | 42 | 2017 |
| High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture F Liao, Z Guo, Y Wang, Y Xie, S Zhang, Y Sheng, H Tang, Z Xu, A Riaud, ... ACS Applied Electronic Materials 2 (1), 111-119, 2019 | 39 | 2019 |
| Multifunctional MoS2 Transistors with Electrolyte Gel Gating B Wu, X Wang, H Tang, W Jiang, Y Chen, Z Wang, Z Cui, T Lin, H Shen, ... Small 16 (22), 2000420, 2020 | 33 | 2020 |
| MoS2 dual-gate transistors with electrostatically doped contacts F Liao, Y Sheng, Z Guo, H Tang, Y Wang, L Zong, X Chen, A Riaud, J Zhu, ... Nano Research 12, 2515-2519, 2019 | 33 | 2019 |
| Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides H Tang, H Zhang, X Chen, Y Wang, X Zhang, P Cai, W Bao Science China Information Sciences 62, 1-19, 2019 | 23 | 2019 |
| Multilayer Si shadow mask processing of wafer-scale MoS2 devices H Zhang, X Guo, W Niu, H Xu, Q Wu, F Liao, J Chen, H Tang, H Liu, Z Xu, ... 2D Materials 7 (2), 025019, 2020 | 18 | 2020 |
| Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors via Electrolyte Gating H Tang, W Niu, F Liao, H Zhang, H Xu, J Deng, J Chen, Z Qiu, J Wan, ... Advanced Electronic Materials 6 (1), 1900838, 2020 | 18 | 2020 |
| Study of contact resistance components in short-channel indium-gallium-zinc-oxide transistor H Tang, H Dekkers, N Rassoul, S Sutar, S Subhechha, V Afanas’ev, ... IEEE Transactions on Electron Devices, 2023 | 11 | 2023 |
| Analog Integrated Circuits Based on Wafer-Level Two-Dimensional MoS2 Materials With Physical and SPICE Model S Ma, Y Wang, X Chen, T Wu, X Wang, H Tang, Y Yao, H Yu, Y Sheng, ... IEEE Access 8, 197287-197299, 2020 | 8 | 2020 |
| A study on ionic gated MoS2 phototransistors B Wu, X Wang, H Tang, T Lin, H Shen, W Hu, X Meng, W Bao, J Wang, ... Science China Information Sciences 62, 1-8, 2019 | 8 | 2019 |
| FPGA-based real-time phase measuring profilometry algorithm design and implementation G Zhan, H Tang, K Zhong, Z Li, Y Shi Optical Metrology and Inspection for Industrial Applications IV 10023, 9-19, 2016 | 3 | 2016 |
| MoS2 transistor gated by PMMA-based electrolyte for sub-1 V operation H Tang, F Liao, X Zhang, J Deng, J Wan, W Bao 2019 IEEE 13th International Conference on ASIC (ASICON), 1-4, 2019 | 1 | 2019 |
| A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack towards Interlayer-free FeFETs Z Chen, N Ronchi, H Tang, AM Walke, R Izmailov, MI Popovici, ... IEEE Electron Device Letters, 2024 | | 2024 |
| Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures H Tang, A Belmonte, D Lin, V Afanas' ev, P Verdonck, A Chasin, ... Solid-State Electronics 214, 108866, 2024 | | 2024 |
Wenzhong Bao （包文中）Fudan UniversityCorreu electrònic verificat a fudan.edu.cn