| A comparative study of different physics-based NBTI models S Mahapatra, N Goel, S Desai, S Gupta, B Jose, S Mukhopadhyay, ... IEEE Transactions on Electron Devices 60 (3), 901-916, 2013 | 338 | 2013 |
| BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation N Parihar, N Goel, S Mukhopadhyay, S Mahapatra IEEE Transactions on Electron Devices 65 (2), 392-403, 2017 | 118 | 2017 |
| A consistent physical framework for N and P BTI in HKMG MOSFETs K Joshi, S Mukhopadhyay, N Goel, S Mahapatra 2012 IEEE international reliability physics symposium (IRPS), 5A. 3.1-5A. 3.10, 2012 | 110 | 2012 |
| A modeling framework for NBTI degradation under dynamic voltage and frequency scaling N Parihar, N Goel, A Chaudhary, S Mahapatra IEEE Transactions on Electron Devices 63 (3), 946-953, 2016 | 67 | 2016 |
| A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence S Desai, S Mukhopadhyay, N Goel, N Nanaware, B Jose, K Joshi, ... 2013 IEEE International Reliability Physics Symposium (IRPS), XT. 2.1-XT. 2.11, 2013 | 59 | 2013 |
| Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress N Goel, T Naphade, S Mahapatra 2015 IEEE International Reliability Physics Symposium, 4A. 3.1-4A. 3.7, 2015 | 50 | 2015 |
| A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs N Goel, K Joshi, S Mukhopadhyay, N Nanaware, S Mahapatra Microelectronics Reliability 54 (3), 491-519, 2014 | 49 | 2014 |
| Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ... 2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014 | 44 | 2014 |
| Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs N Parihar, U Sharma, S Mukhopadhyay, N Goel, A Chaudhary, R Rao, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-1.1-XT-1.11, 2017 | 34 | 2017 |
| A comparative study of NBTI and PBTI using different experimental techniques S Mukhopadhyay, N Goel, S Mahapatra IEEE Transactions on Electron Devices 63 (10), 4038-4045, 2016 | 34 | 2016 |
| A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs N Goel, S Mukhopadhyay, N Nanaware, S De, RK Pandey, K Murali, ... 2014 IEEE International Reliability Physics Symposium, 6A. 4.1-6A. 4.12, 2014 | 33 | 2014 |
| Device to circuit framework for activity-dependent nbti aging in digital circuits A Thirunavukkarasu, H Amrouch, J Joe, N Goel, N Parihar, S Mishra, ... IEEE Transactions on Electron Devices 66 (1), 316-323, 2018 | 32 | 2018 |
| Characterization methods for BTI degradation and associated gate insulator defects S Mahapatra, N Goel, A Chaudhary, K Joshi, S Mukhopadhyay Fundamentals of Bias Temperature Instability in MOS Transistors …, 2016 | 30 | 2016 |
| Investigation of stochastic implementation of reaction diffusion (RD) models for NBTI related interface trap generation T Naphade, N Goel, PR Nair, S Mahapatra 2013 IEEE International Reliability Physics Symposium (IRPS), XT. 5.1-XT. 5.11, 2013 | 30 | 2013 |
| Ultrafast AC–DC NBTI characterization of deep IL scaled HKMG p-MOSFETs N Goel, N Nanaware, S Mahapatra IEEE electron device letters 34 (12), 1476-1478, 2013 | 29 | 2013 |
| Modeling of DC-AC NBTI Stress-Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs N Choudhury, N Parihar, N Goel, A Thirunavukkarasu, S Mahapatra IEEE Journal of the Electron Devices Society 8, 1281-1288, 2020 | 27 | 2020 |
| Impact of time-zero and NBTI variability on sub-20nm FinFET based SRAM at low voltages N Goel, P Dubey, J Kawa, S Mahapatra 2015 IEEE International Reliability Physics Symposium, CA. 5.1-CA. 5.7, 2015 | 25 | 2015 |
| A detailed study of gate insulator process dependence of NBTI using a compact model K Joshi, S Mukhopadhyay, N Goel, N Nanware, S Mahapatra IEEE Transactions on Electron Devices 61 (2), 408-415, 2014 | 21 | 2014 |
| A comprehensive DC and AC PBTI modeling framework for HKMG n-MOSFETs S Mukhopadhyay, N Parihar, N Goel, S Mahapatra IEEE Transactions on Electron Devices 64 (4), 1474-1481, 2017 | 18 | 2017 |
| Reaction-diffusion model AE Islam, N Goel, S Mahapatra, MA Alam Fundamentals of Bias Temperature Instability in MOS Transistors …, 2016 | 16 | 2016 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)Correu electrònic verificat a ee.iitb.ac.in
