Segueix
Zheng Sun
Zheng Sun
Purdue University; PhD Student
Correu electrònic verificat a purdue.edu
Títol
Citada per
Citada per
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Integrated contact lens sensor system based on multifunctional ultrathin MoS2 transistors
S Guo, K Wu, C Li, H Wang, Z Sun, D Xi, S Zhang, W Ding, ME Zaghloul, ...
Matter 4 (3), 969-985, 2021
1442021
Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2
Z Sun, CS Pang, P Wu, TYT Hung, MY Li, SL Liew, CC Cheng, H Wang, ...
ACS nano 16 (9), 14942-14950, 2022
282022
Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts
Z Sun, SY Kim, J Cai, J Shen, HY Lan, Y Tan, X Wang, C Shen, H Wang, ...
ACS nano 18 (33), 22444-22453, 2024
92024
High-Performance Complementary Circuits from Two-Dimensional MoTe2
J Cai, Z Sun, P Wu, R Tripathi, HY Lan, J Kong, Z Chen, J Appenzeller
Nano Letters 23 (23), 10939-10945, 2023
92023
Experimental demonstration of an on-chip p-bit core based on stochastic magnetic tunnel junctions and 2D MoS2 transistors
J Daniel, Z Sun, X Zhang, Y Tan, N Dilley, Z Chen, J Appenzeller
Nature Communications 15, 4098, 2024
52024
A mobility study of monolayer MoS2 on low-κ/high-κ dielectrics
Z Sun, C Chen, JA Robinson, Z Chen, J Appenzeller
2023 Device Research Conference, 2023
52023
Tailoring amorphous boron nitride for high-performance two-dimensional electronics
CY Chen, Z Sun, R Torsi, K Wang, J Kachian, B Liu, GB Rayner Jr, ...
Nature Communications 15 (1), 4016, 2024
22024
Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS2 FETs
J Daniel, Z Sun, X Zhang, Y Tan, N Dilley, Z Chen, J Appenzeller
https://arxiv.org/abs/2308.10989, 2023
22023
Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2
SY Kim, Z Sun, J Roy, X Wang, Z Chen, J Appenzeller, RM Wallace
ACS Applied Materials & Interfaces 16 (40), 54790-54798, 2024
12024
High performance ultrascaled monolayer/bilayer WSe2 FETs achieved by immaculate 2D/2D contacts
J Appenzeller, Z Sun, A Afzalian, P Wu, H Zhang, S Krylyuk, R Tripathi, ...
2024
On‐Chip Synthesis of Quasi‐2D Semimetals from Multi‐Layer Chalcogenides
J Cai, H Zhang, Y Tan, Z Sun, P Wu, R Tripathi, S Krylyuk, C Suhy, J Kong, ...
Advanced Materials 36 (46), 2410815, 2024
2024
Experimental demonstration of a compact spintronics-based platform with high-quality tunable random number generation for probabilistic computing
JAD Daniel, Z Sun, X Zhang, Y Tan, N Dilley, Z Chen, J Appenzeller
Spintronics XVII 13119, 100-112, 2024
2024
Stable Nitric Oxide Doping in Monolayer WSe2 for High-Performance P-type Transistors
Z Chen, HY Lan, CP Lin, J Cai, Z Sun, P Wu, Y Tan, TH Hou, ...
2024
Electrical transport properties of n-and p-doped InSe: Bulk crystals versus exfoliated layers
Z Sun
The George Washington University, 2020
2020
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
Articles 1–14