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Jihun Mun
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Wafer-scale production of highly uniform two-dimensional MoS2 by metal-organic chemical vapor deposition
TW Kim, J Mun, H Park, DH Joung, M Diware, C Won, J Park, SH Jeong, ...
Nanotechnology 28 (18), 18LT01, 2017
1142017
Highly sensitive two-dimensional MoS2 gas sensor decorated with Pt nanoparticles
J Park, J Mun, JS Shin, SW Kang
Royal Society Open Science 5 (12), 181462, 2018
1062018
Low-temperature growth of layered molybdenum disulphide with controlled clusters
J Mun, Y Kim, IS Kang, SK Lim, SJ Lee, JW Kim, HM Park, T Kim, ...
Scientific reports 6 (1), 21854, 2016
862016
Hierarchical, Dual-Scale Structures of Atomically Thin MoS2 for Tunable Wetting
J Choi, J Mun, MC Wang, A Ashraf, SW Kang, SW Nam
Nano letters 17 (3), 1756-1761, 2017
802017
High-Mobility MoS2 Directly Grown on Polymer Substrate with Kinetics-Controlled Metal–Organic Chemical Vapor Deposition
J Mun, H Park, J Park, DH Joung, SK Lee, J Leem, JM Myoung, J Park, ...
ACS Applied Electronic Materials 1 (4), 608-616, 2019
712019
Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry
MS Diware, K Park, J Mun, HG Park, W Chegal, YJ Cho, HM Cho, J Park, ...
Current Applied Physics 17 (10), 1329-1334, 2017
402017
Sensor based on chemical vapour deposition-grown molybdenum disulphide for gas sensing application
B SooáKang, J YongáSong
RSC advances 6 (79), 75839-75843, 2016
182016
Crack-assisted, localized deformation of van der Waals materials for enhanced strain confinement
J Leem, Y Lee, MC Wang, JM Kim, J Mun, MF Haque, SW Kang, SW Nam
2D Materials 6 (4), 044001, 2019
142019
Observation of photoluminescence from large-scale layer-controlled 2D ß-Cu2S synthesized by the vapor-phase sulfurization of copper thin films
R Shahzad, TW Kim, J Mun, SW Kang
Nanotechnology 28 (50), 505601, 2017
122017
MOCVD of Hierarchical C‐MoS2 Nanobranches for ppt‐Level NO2 Detection
J Song, J Baek, J Cho, T Kim, M Kim, HS Kim, J Mun, SW Kang
Small Structures 4 (8), 2200392, 2023
102023
Development of particle characteristics diagnosis system for nanoparticle analysis in vacuum
D Kim, J Mun, HU Kim, JY Yun, YJ Kim, TW Kim, T Kim, SW Kang
Review of Scientific Instruments 87 (2), 2016
92016
Effect of Measurement System Configuration and Operating Conditions on 2D Material-Based Gas Sensor Sensitivity
J Ryu, S Shim, J Song, J Park, HS Kim, SK Lee, JC Shin, J Mun, SW Kang
Nanomaterials 13 (3), 573, 2023
82023
Low‐Temperature, Universal Synthetic Route for Mesoporous Metal Oxides by Exploiting Synergistic Effect of Thermal Activation and Plasma
KW Kim, H Seok, S Son, SJ Park, C Yang, D Lee, HC Lee, J Mun, ...
Advanced Materials 36 (18), 2311809, 2024
62024
Fabrication of two-dimensional MoS2 films-based field effect transistor for high mobility electronic device application
DH Joung, H Park, J Mun, J Park, SW Kang, TW Kim
Applied Science and Convergence Technology 26 (5), 110-113, 2017
62017
Development and calibration of differential mobility analyzer for 20 to 80 nm particles under low pressure conditions
JH Mun, DG Cho, YJ Kim, JB Choi, SW Kang, JY Yun, YH Shin, TS Kim
Journal of Nanoscience and Nanotechnology 11 (7), 6275-6282, 2011
62011
S/Mo ratio and petal size controlled MoS2 nanoflowers with low temperature metal organic chemical vapor deposition and their application in solar cells
J Park, H Park, S Park, NT Thuy, J Mun, J Kim, SJ Lee, Z Ku, SW Kang
Nanotechnology 32 (19), 195206, 2021
52021
Chemical vapor deposition of MoS2 films
J Mun, D Kim, J Yun, Y Shin, S Kang, T Kim
ECS Transactions 58 (7), 199, 2013
52013
A photolithographic method for fabricating electron devices based on MOCVD-grown MoS2
H Park, J Mun, DH Joung, JJ Wie, SH Jeong, SW Kang
Chemical Engineering Journal 382, 122944, 2020
42020
Development of in-situ particle monitor with beam homogenizing module for enhancement of nanoparticle countering efficiency
J Kim, J Mun, K Lee, SH Park, SK Lim, C Lee, JY Lim, SW Kang
Review of Scientific Instruments 90 (9), 2019
32019
Probing Interfacial Surface State Excitons in Nanoscale Synthesized CuxS/MoS2 Heterostructure
R Shahzad, J Mun, TW Kim, SW Kang
Advanced Materials Interfaces 6 (6), 1801771, 2019
32019
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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