Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures J Simon, V Protasenko, C Lian, H Xing, D Jena
Science 327 (5961), 60-64, 2010
890 2010 AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing
IEEE Electron Device Letters 29 (7), 661-664, 2008
215 2008 Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures J Simon, Z Zhang, K Goodman, H Xing, T Kosel, P Fay, D Jena
Physical review letters 103 (2), 026801, 2009
160 2009 Kinetically limited growth of GaAsBi by molecular-beam epitaxy AJ Ptak, R France, DA Beaton, K Alberi, J Simon, A Mascarenhas, ...
Journal of Crystal Growth 338 (1), 107-110, 2012
144 2012 Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ...
physica status solidi (a) 208 (7), 1511-1516, 2011
114 2011 Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy W Metaferia, KL Schulte, J Simon, S Johnston, AJ Ptak
Nature communications 10 (1), 3361, 2019
99 2019 Controlled exfoliation of (100) GaAs-based devices by spalling fracture CA Sweet, KL Schulte, JD Simon, MA Steiner, N Jain, DL Young, AJ Ptak, ...
Applied Physics Letters 108 (1), 2016
88 2016 N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping J Verma, J Simon, V Protasenko, T Kosel, H Grace Xing, D Jena
Applied Physics Letters 99 (17), 2011
86 2011 The fabrication of large-area, free-standing GaN by a novel nanoetching process Y Zhang, Q Sun, B Leung, J Simon, ML Lee, J Han
Nanotechnology 22 (4), 045603, 2010
81 2010 Germanium-on-nothing for epitaxial liftoff of GaAs solar cells S Park, J Simon, KL Schulte, AJ Ptak, JS Wi, DL Young, J Oh
Joule 3 (7), 1782-1793, 2019
74 2019 Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN J Simon, AK Wang, H Xing, S Rajan, D Jena
Applied physics letters 88 (4), 2006
68 2006 III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy J Simon, KL Schulte, KAW Horowitz, T Remo, DL Young, AJ Ptak
Crystals 9 (1), 3, 2018
65 2018 Development of high-bandgap AlGaInP solar cells grown by organometallic vapor-phase epitaxy EE Perl, J Simon, JF Geisz, W Olavarria, M Young, A Duda, DJ Friedman, ...
IEEE Journal of Photovoltaics 6 (3), 770-776, 2016
60 2016 Optical study of hot electron transport in GaN: Signatures of the hot-phonon effect K Wang, J Simon, N Goel, D Jena
Applied physics letters 88 (2), 2006
56 2006 GaAs solar cells grown by hydride vapor-phase epitaxy and the development of GaInP cladding layers J Simon, KL Schulte, DL Young, NM Haegel, AJ Ptak
IEEE Journal of Photovoltaics 6 (1), 191-195, 2015
54 2015 Upright and inverted single-junction GaAs solar cells grown by hydride vapor phase epitaxy J Simon, KL Schulte, N Jain, S Johnston, M Young, MR Young, DL Young, ...
IEEE Journal of Photovoltaics 7 (1), 157-161, 2016
50 2016 Low-cost III–V solar cells grown by hydride vapor-phase epitaxy J Simon, D Young, A Ptak
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 0538-0541, 2014
50 2014 Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400 EE Perl, J Simon, JF Geisz, ML Lee, DJ Friedman, MA Steiner
IEEE Journal of Photovoltaics 6 (5), 1345-1352, 2016
48 2016 Lattice-mismatched 0.7-eV GaInAs solar cells grown on GaAs using GaInP compositionally graded buffers RM France, I García, WE McMahon, AG Norman, J Simon, JF Geisz, ...
IEEE Journal of Photovoltaics 4 (1), 190-195, 2013
48 2013 Multijunction Ga0.5 In0.5 P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy KL Schulte, J Simon, AJ Ptak
Progress in Photovoltaics: Research and Applications 26 (11), 887-893, 2018
44 2018 