| An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory D Wang, P Wang, S Mondal, S Mohanty, T Ma, E Ahmadi, Z Mi Advanced Electronic Materials, 2200005, 2022 | 85 | 2022 |
| Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy D Wang, P Wang, B Wang, Z Mi Applied Physics Letters 119 (11), 2021 | 80 | 2021 |
| Dawn of nitride ferroelectric semiconductors: from materials to devices P Wang, D Wang, S Mondal, M Hu, J Liu, Z Mi Semiconductor Science and Technology 38 (4), 043002, 2023 | 62 | 2023 |
| Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy D Wang, P Wang, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi Applied Physics Letters 122 (5), 2023 | 54 | 2023 |
| Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing D Wang, P Wang, S Mondal, M Hu, Y Wu, T Ma, Z Mi Advanced Materials 35 (20), 2210628, 2023 | 48 | 2023 |
| Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT D Wang, P Wang, M He, J Liu, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi Applied Physics Letters 122 (9), 2023 | 48 | 2023 |
| Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy P Wang, D Wang, S Mondal, Z Mi Applied Physics Letters 121 (2), 2022 | 44 | 2022 |
| Ferroelectric YAlN grown by molecular beam epitaxy D Wang, S Mondal, J Liu, M Hu, P Wang, S Yang, D Wang, Y Xiao, Y Wu, ... Applied Physics Letters 123 (3), 2023 | 35 | 2023 |
| Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy D Wang, P Wang, S Mondal, Y Xiao, M Hu, Z Mi Applied Physics Letters 121 (4), 2022 | 35 | 2022 |
| Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors P Wang, D Wang, S Mondal, M Hu, Y Wu, T Ma, Z Mi ACS Applied Materials & Interfaces 15 (14), 18022-18031, 2023 | 27 | 2023 |
| Interfacial modulated lattice-polarity-controlled epitaxy of III-nitride heterostructures on Si (111) P Wang, D Wang, S Mondal, Y Wu, T Ma, Z Mi ACS Applied Materials & Interfaces 14 (13), 15747-15755, 2022 | 22 | 2022 |
| Enhancing responsivity and detectivity in broadband UV–VIS photodetector by ex-situ UV–ozone annealing technique MJ Alam, P Murkute, H Ghadi, S Sushama, SMMD Dwivedi, A Ghosh, ... Superlattices and Microstructures 137, 106333, 2020 | 18 | 2020 |
| Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN S Mondal, D Wang, P Wang, Y Wu, M Hu, Y Xiao, S Mohanty, T Ma, ... APL Materials 10 (12), 2022 | 17 | 2022 |
| On the surface oxidation and band alignment of ferroelectric Sc0. 18Al0. 82N/GaN heterostructures D Wang, D Wang, P Zhou, M Hu, J Liu, S Mondal, T Ma, P Wang, Z Mi Applied Surface Science 628, 157337, 2023 | 16 | 2023 |
| Vertically coupled hybrid InAs sub-monolayer on InAs Stranski–Krastanov quantum dot heterostructure: toward next generation broadband IR detection D Das, J Saha, D Panda, B Tongbram, PP Raut, R Ramavath, S Mondal, ... IEEE Transactions on Nanotechnology 19, 76-83, 2019 | 13 | 2019 |
| Correlation analysis of some growth, physiological parameters, yield and yield attributes of chick pea (Cicer arietinum L.) D Panda, A Sen, DS Dhakre, S Mondal Int. J. Bio-res. Env. Agril. Sci 1 (3), 90-95, 2015 | 13 | 2015 |
| Improving optical properties and controlling defect-bound states in ZnMgO thin films through ultraviolet–ozone annealing MJ Alam, P Murkute, S Sushama, H Ghadi, S Paul, S Mondal, ... Thin Solid Films 708, 138112, 2020 | 12 | 2020 |
| Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures D Wang, S Mondal, P Kezer, M Hu, J Liu, Y Wu, P Zhou, T Ma, P Wang, ... Applied Surface Science 637, 157893, 2023 | 9 | 2023 |
| Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers D Wang, P Wang, S Mondal, J Liu, M Hu, M He, S Nam, W Peng, S Yang, ... Applied Physics Letters 123 (10), 2023 | 9 | 2023 |
| ScAlN-Based ITO Channel Ferroelectric Field-Effect Transistors With Large Memory Window S Mondal, D Wang, M Hu, J Liu, M He, P Wang, Z Mi IEEE Transactions on Electron Devices 70 (9), 4618-4621, 2023 | 9 | 2023 |
Zetian MiUniversity of Michigan, Ann ArborCorreu electrònic verificat a umich.edu
