Huixia Fu

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Sheng Menginstitute of physics, chinese academy of scienceCorreu electrònic verificat a iphy.ac.cn
Binghai YanProfessor of Physics, Pennsylvania State UniversityCorreu electrònic verificat a psu.edu
Hui LiProfessor, BAICSM, Beijing University of Chemical TechnologyCorreu electrònic verificat a buct.edu.cn
Jin ZhangNational Center for Nanoscience and Technology；Max Planck Institute (MPSD); IOP, CASCorreu electrònic verificat a nanoctr.cn
Hailin PengProfessor at Physical Chemistry, Peking UniversityCorreu electrònic verificat a pku.edu.cn
Kehui WuTsientang Inst. Adv. Stu., Hangzhou, China /Previous: Inst. Phys. CASCorreu electrònic verificat a iphy.ac.cn
CHEN LanInstitute of Physics, The Chinese Academy of SciencesCorreu electrònic verificat a iphy.ac.cn
Cai Cheng (程才)Sichuan Normal UniversityCorreu electrònic verificat a sicnu.edu.cn
Wei MaNingxia UniversityCorreu electrònic verificat a nxu.edu.cn
Zijing DingBeijing Computational Science Research CenterCorreu electrònic verificat a ustc.edu.cn
Chenguang QiuPeking UniversityCorreu electrònic verificat a pku.edu.cn
haim beidenkopfWeizmann institute of scienceCorreu electrònic verificat a weizmann.ac.il
Claudia FelserMax Planck Institute Chemical Physics of SolidsCorreu electrònic verificat a cpfs.mpg.de
Chao LianInstitute of Physics Chinese Academy of SciencesCorreu electrònic verificat a iphy.ac.cn
Abhay Kumar NayakUniversity of California, Santa BarbaraCorreu electrònic verificat a ucsb.edu
Kaihui LiuSchool of Physics, Peking Univeristy, Beijing, ChinaCorreu electrònic verificat a pku.edu.cn
Hao HongPeking UnivsersityCorreu electrònic verificat a pku.edu.cn
Yang Zhang (张阳)University of Tennessee Knoxville, MIT, MPI CPfS/IFWCorreu electrònic verificat a utk.edu
Hang LiuHumboldt Postdoctoral Fellowship, Max Planck Institute for the Structure and Dynamics of MatterCorreu electrònic verificat a mpsd.mpg.de
Ding PeiSynchrotron SOLEILCorreu electrònic verificat a synchrotron-soleil.fr

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Huixia Fu

Chongqing University, China

Correu electrònic verificat a cqu.edu.cn

Condensed Matter Physics


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi₂O₂Se C Chen, M Wang, J Wu, H Fu, H Yang, Z Tian, T Tu, H Peng, Y Sun, X Xu, ... Science Advances 4 (9), eaat8355, 2018	228	2018
A native oxide high-κ gate dielectric for two-dimensional electronics T Li, T Tu, Y Sun, H Fu, J Yu, L Xing, Z Wang, H Wang, R Jia, J Wu, C Tan, ... Nature Electronics 3 (8), 473-478, 2020	224	2020
Ordered and reversible hydrogenation of silicene J Qiu, H Fu, Y Xu, AI Oreshkin, T Shao, H Li, S Meng, L Chen, K Wu Physical review letters 114 (12), 126101, 2015	152	2015
Exchange bias and quantum anomalous Hall effect in the MnBi₂Te₄/CrI₃ heterostructure H Fu, CX Liu, B Yan Science advances 6 (10), eaaz0948, 2020	126	2020
Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi₂O₂Se J Wu, C Qiu, H Fu, S Chen, C Zhang, Z Dou, C Tan, T Tu, T Li, Y Zhang, ... Nano Letters 19 (1), 197-202, 2018	118	2018
Observation of charge to spin conversion in Weyl semimetal at room temperature B Zhao, D Khokhriakov, Y Zhang, H Fu, B Karpiak, AM Hoque, X Xu, ... Physical review research 2 (1), 013286, 2020	114	2020
Intrinsic valley polarization of magnetic VSe2 monolayers J Liu, WJ Hou, C Cheng, HX Fu, JT Sun, S Meng Journal of Physics: Condensed Matter 29 (25), 255501, 2017	111	2017
From silicene to half-silicane by hydrogenation J Qiu, H Fu, Y Xu, Q Zhou, S Meng, H Li, L Chen, K Wu ACS nano 9 (11), 11192-11199, 2015	109	2015
Stacking-dependent electronic structure of bilayer silicene H Fu, J Zhang, Z Ding, H Li, S Meng Applied Physics Letters 104 (13), 2014	102	2014
Interlayer‐State‐Coupling Dependent Ultrafast Charge Transfer in MoS₂/WS₂ Bilayers J Zhang, H Hong, C Lian, W Ma, X Xu, X Zhou, H Fu, K Liu, S Meng Advanced science 4 (9), 1700086, 2017	101	2017
Suppressed superconductivity in substrate-supported β12 borophene by tensile strain and electron doping C Cheng, JT Sun, H Liu, HX Fu, J Zhang, XR Chen, S Meng 2D Materials 4 (2), 025032, 2017	96	2017
Self-modulation doping effect in the high-mobility layered semiconductor H Fu, J Wu, H Peng, B Yan Physical Review B 97 (24), 241203, 2018	88	2018
Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn J Zhou, X Wang, Y Liu, J Yu, H Fu, L Liu, S Chen, J Deng, W Lin, X Shu, ... Science advances 5 (5), eaau6696, 2019	86	2019
Resolving the topological classification of bismuth with topological defects AK Nayak, J Reiner, R Queiroz, H Fu, C Shekhar, B Yan, C Felser, ... Science advances 5 (11), eaax6996, 2019	85	2019
Finite-temperature violation of the anomalous transverse Wiedemann-Franz law L Xu, X Li, X Lu, C Collignon, H Fu, J Koo, B Fauqué, B Yan, Z Zhu, ... Science Advances 6 (17), eaaz3522, 2020	83	2020
Single-crystalline van der Waals layered dielectric with high dielectric constant C Zhang, T Tu, J Wang, Y Zhu, C Tan, L Chen, M Wu, R Zhu, Y Liu, H Fu, ... Nature materials 22 (7), 832-837, 2023	80	2023
Nonlinear Rashba spin splitting in transition metal dichalcogenide monolayers C Cheng, JT Sun, XR Chen, HX Fu, S Meng Nanoscale 8 (41), 17854-17860, 2016	66	2016
New pathway for hot electron relaxation in two-dimensional heterostructures J Zhang, H Hong, J Zhang, H Fu, P You, J Lischner, K Liu, E Kaxiras, ... Nano Letters 18 (9), 6057-6063, 2018	55	2018
Probing nonequilibrium dynamics of photoexcited polarons on a metal-oxide surface with atomic precision C Guo, X Meng, H Fu, Q Wang, H Wang, Y Tian, J Peng, R Ma, Y Weng, ... Physical Review Letters 124 (20), 206801, 2020	49	2020
Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers L Kou, H Fu, Y Ma, B Yan, T Liao, A Du, C Chen Physical Review B 97 (7), 075429, 2018	45	2018

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