Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional W Zhou, S Zhang, S Guo, Y Wang, J Lu, X Ming, Z Li, H Qu, H Zeng
Physical Review Applied 13 (4), 044066, 2020
90 2020 Anisotropic in‐plane ballistic transport in monolayer black arsenic‐phosphorus fets W Zhou, S Zhang, Y Wang, S Guo, H Qu, P Bai, Z Li, H Zeng
Advanced Electronic Materials 6 (3), 1901281, 2020
81 2020 A highly sensitive and selective SnS2 monolayer sensor in detecting SF6 decomposition gas S Guo, X Hu, Y Huang, W Zhou, H Qu, L Xu, X Song, S Zhang, H Zeng
Applied Surface Science 541, 148494, 2021
62 2021 First-principles calculations of the electronic properties of two-dimensional pentagonal structure XS2 (X= Ni, Pd, Pt) H Yang, Y Li, Z Yang, X Shi, Z Lin, R Guo, L Xu, H Qu, S Zhang
Vacuum 174, 109176, 2020
51 2020 Uncovering the anisotropic electronic structure of 2D group VA-VA monolayers for quantum transport H Qu, S Guo, W Zhou, S Zhang
IEEE Electron Device Letters 42 (1), 66-69, 2020
42 2020 High-Performance and Low-Power Transistors Based on Anisotropic Monolayer β - S Guo, H Qu, W Zhou, SA Yang, YS Ang, J Lu, H Zeng, S Zhang
Physical Review Applied 17 (6), 064010, 2022
35 2022 Ultrascaled Double-Gate Monolayer S Guo, Y Wang, X Hu, S Zhang, H Qu, W Zhou, Z Wu, X Liu, H Zeng
Physical Review Applied 14 (4), 044031, 2020
34 2020 Revealing the weak Fermi level pinning effect of 2D semiconductor/2D metal contact: A case of monolayer In2Ge2Te6 and its Janus structure In2Ge2Te3Se3 J Li, W Zhou, L Xu, J Yang, H Qu, T Guo, B Xu, S Zhang, H Zeng
Materials Today Physics 26, 100749, 2022
32 2022 Dipole-Engineering Strategy for Regulating the Electronic Contact of a Two-Dimensional X /Graphene (X = J Li, W Liu, W Zhou, J Yang, H Qu, Y Hu, S Zhang
Physical Review Applied 17 (5), 054009, 2022
30 2022 A machine learning approach for optimization of channel geometry and source/drain doping profile of stacked nanosheet transistors H Xu, W Gan, L Cao, C Yang, J Wu, M Zhou, H Qu, S Zhang, H Yin, Z Wu
IEEE Transactions on Electron Devices 69 (7), 3568-3574, 2022
29 2022 In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor Z Guo, Y Zeng, F Meng, H Qu, S Zhang, S Hu, S Fan, H Zeng, R Cao, ...
eLight 2 (1), 9, 2022
28 2022 Enhanced interband tunneling in two-dimensional tunneling transistors through anisotropic energy dispersion H Qu, S Guo, W Zhou, Z Wu, J Cao, Z Li, H Zeng, S Zhang
Physical Review B 105 (7), 075413, 2022
25 2022 Modulating tunneling width and energy window for high-on-current two-dimensional tunnel field-effect transistors W Zhou, S Zhang, J Cao, Z Wu, Y Wang, Y Zhang, Z Yan, H Qu, H Zeng
Nano Energy 81, 105642, 2021
25 2021 Unusual Electronic Transitions in Two-dimensional Layered W Zhou, S Guo, S Zhang, Z Zhu, SA Yang, M Chen, B Cai, H Qu, H Zeng
Physical Review Applied 11 (6), 064045, 2019
25 2019 Extending channel scaling limit of p-MOSFETs through antimonene with heavy effective mass and high density of state S Zhang, H Qu, J Cao, Y Wang, SA Yang, W Zhou, H Zeng
IEEE Transactions on Electron Devices 69 (2), 857-862, 2022
20 2022 Ballistic transport in high-performance and low-power sub-5 nm two-dimensional ZrNBr MOSFETs H Qu, S Zhang, W Zhou, S Guo, H Zeng
IEEE Electron Device Letters 41 (7), 1029-1032, 2020
16 2020 Ballistic Quantum Transport of Sub‐10 nm 2D Sb2 Te2 Se Transistors H Qu, W Zhou, S Guo, Z Li, Y Wang, S Zhang
Advanced Electronic Materials 5 (12), 1900813, 2019
16 2019 Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study H Qu, S Zhang, J Cao, Z Wu, Y Chai, W Li, LJ Li, W Ren, X Wang, H Zeng
Science Bulletin 69 (10), 1427-1436, 2024
15 2024 Dependence of tunneling mechanism on two-dimensional material parameters: A high-throughput study W Zhou, H Qu, S Guo, B Cai, H Chen, Z Wu, H Zeng, S Zhang
Physical Review Applied 17 (6), 064053, 2022
14 2022 High-performance monolayer Na 3 Sb shrinking transistors: a DFT-NEGF study W Zhou, S Zhang, S Guo, H Qu, B Cai, X Chen, H Zeng
Nanoscale 12 (36), 18931-18937, 2020
13 2020 