Theodore D Moustakas

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Roberto PaiellaProfessor of Electrical and Computer Engineering, Boston UniversityCorreu electrònic verificat a bu.edu
Anirban BhattacharyyaUniversity of CalcuttaCorreu electrònic verificat a caluniv.ac.in
Hock M. NgOctopus Innovation PartnersCorreu electrònic verificat a octoip.com
Karl LudwigProfessor of Physics, Boston UniversityCorreu electrònic verificat a bu.edu
Eleftherios IliopoulosDepartment of Physics, University of Crete & IESL-FORTHCorreu electrònic verificat a physics.uoc.gr
Emmanouil DimakisGroup leader, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum DresdenCorreu electrònic verificat a hzdr.de
Yitao LiaoBoston UniversityCorreu electrònic verificat a bu.edu
Dimitris KorakakisCorreu electrònic verificat a mail.wvu.edu
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaCorreu electrònic verificat a unimib.it
Piotr PerlinInstitute of High Pressure PhysicsCorreu electrònic verificat a unipress.waw.pl
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesCorreu electrònic verificat a ifpan.edu.pl
Luca Dal NegroProfessor of Electrical and Computer Engineering, Boston UniversityCorreu electrònic verificat a bu.edu
Michał LeszczynskiCorreu electrònic verificat a unipress.waw.pl
Wei ZhangBoston University Photonics CenterCorreu electrònic verificat a physics.bu.edu
Soumendra BasuAssociate Division Head, Materials Science & Engineering; Professor, Mechanical Engineering, BostonCorreu electrònic verificat a bu.edu
Papo Chen, T.C. Chen, Tai-Chou Che...Boston UniversityCorreu electrònic verificat a amat.com
Enrico BellottiBoston University Georgia Institute of TechnologyCorreu electrònic verificat a bu.edu
HAIDING SUNProfessor of University of Science and Technology of ChinaCorreu electrònic verificat a ustc.edu.cn
Eleni PalouraProfessor of Physics, Aristotle University of ThessalonikiCorreu electrònic verificat a auth.gr
Katsikini M.Aristotle University of ThessalonikiCorreu electrònic verificat a auth.gr

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Theodore D Moustakas

Boston University, Electrical and Computer Engineering Department

Correu electrònic verificat a bu.edu - Pàgina d'inici

nitride semiconductors amorphous semiconductors III-V compounds diamond thin films and metallic


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas Journal of Applied Physics 83 (7), 3656-3659, 1998	815	1998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition R Singh, D Doppalapudi, TD Moustakas, LT Romano Applied Physics Letters 70 (9), 1089-1091, 1997	644	1997
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon T Lei, TD Moustakas, RJ Graham, Y He, SJ Berkowitz Journal of Applied Physics 71 (10), 4933-4943, 1992	567	1992
The role of dislocation scattering in n-type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman Applied physics letters 73 (6), 821-823, 1998	562	1998
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon Applied physics letters 59 (8), 944-946, 1991	559	1991
Metal contacts to gallium nitride JS Foresi, TD Moustakas Applied physics letters 62 (22), 2859-2861, 1993	527	1993
Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995	412	1995
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates T Lei, KF Ludwig Jr, TD Moustakas Journal of applied physics 74 (7), 4430-4437, 1993	361	1993
Growth of GaN by ECR-assisted MBE TD Moustakas, T Lei, RJ Molnar Physica B: Condensed Matter 185 (1-4), 36-49, 1993	340	1993
Optical Devices Featuring textured semiconductor layers JSC TD Moustakas US Patent 8,035,113, 2011	336	2011
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy D Doppalapudi, SN Basu, KF Ludwig Jr, TD Moustakas Journal of applied physics 84 (3), 1389-1395, 1998	336	1998
Gallium Nitride (GaN) JI Pankove, TD Moustakas (No Title), 1998	336	1998
Doping, Schottky barrier and p n junction formation in amorphous germanium and silicon by rf sputtering W Paul, AJ Lewis, GAN Connell, TD Moustakas Solid State Communications 20 (10), 969-972, 1976	315	1976
Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994	296	1994
Effect of nitrogen on the growth of diamond films S Jin, TD Moustakas Applied Physics Letters 65 (4), 403-405, 1994	289	1994
Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995	287	1995
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ... Journal of Applied Physics 76 (4), 2429-2434, 1994	257	1994
Electron transport mechanism in gallium nitride RJ Molnar, T Lei, TD Moustakas Applied physics letters 62 (1), 72-74, 1993	238	1993
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species RJ Molnar, TD Moustakas Journal of Applied Physics 76 (8), 4587-4595, 1994	237	1994
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy RJ Molnar, R Singh, TD Moustakas Applied physics letters 66 (3), 268-270, 1995	218	1995

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