| Analytical model and design of 4H-SiC planar and trenched JBS diodes L Di Benedetto, GD Licciardo, T Erlbacher, AJ Bauer, S Bellone IEEE Transactions on Electron Devices 63 (6), 2474-2481, 2016 | 40 | 2016 |
| Analytical model of the forward operation of 4H-SiC vertical DMOSFET in the safe operating temperature range GD Licciardo, S Bellone, L Di Benedetto IEEE Transactions on Power Electronics 30 (10), 5800-5809, 2014 | 40 | 2014 |
| Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET GD Licciardo, L Di Benedetto, S Bellone IEEE Transactions on Electron Devices 63 (4), 1783-1787, 2016 | 39 | 2016 |
| Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell HC Neitzert, P Spinillo, S Bellone, GD Licciardi, M Tucci, F Roca, ... Solar energy materials and solar cells 83 (4), 435-446, 2004 | 38 | 2004 |
| Multiplier-less stream processor for 2D filtering in visual search applications GD Licciardo, C Cappetta, L Di Benedetto, A Rubino, R Liguori IEEE Transactions on Circuits and Systems for Video Technology 28 (1), 267-272, 2016 | 37 | 2016 |
| Weighted partitioning for fast multiplierless multiple-constant convolution circuit GD Licciardo, C Cappetta, L Di Benedetto, M Vigliar IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 66-70, 2016 | 37 | 2016 |
| A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs L Di Benedetto, GD Licciardo, T Erlbacher, AJ Bauer, R Liguori, A Rubino IEEE Transactions on Electron Devices 63 (9), 3795-3799, 2016 | 36 | 2016 |
| An Analytical Model of the Switching Behavior of 4H-SiC p $^{\bm+} $-nn $^{\bm+} $ Diodes from Arbitrary Injection Conditions S Bellone, FG Della Corte, L Di Benedetto, GD Licciardo IEEE transactions on power electronics 27 (3), 1641-1652, 2011 | 34 | 2011 |
| Experimental measurements of majority and minority carrier lifetime profile in SI epilayers by the use of an improved OCVD method S Bellone, GD Licciardo, S Daliento, L Mele IEEE electron device letters 26 (7), 501-503, 2005 | 33 | 2005 |
| Low-power HWAccelerator for AI edge-computing in human activity recognition systems A De Vita, D Pau, C Parrella, L Di Benedetto, A Rubino, GD Licciardo 2020 2nd IEEE international conference on artificial intelligence circuits …, 2020 | 30 | 2020 |
| A partially binarized hybrid neural network system for low-power and resource constrained human activity recognition A De Vita, A Russo, D Pau, L Di Benedetto, A Rubino, GD Licciardo IEEE Transactions on Circuits and Systems I: Regular Papers 67 (11), 3893-3904, 2020 | 30 | 2020 |
| Low power tiny binary neural network with improved accuracy in human recognition systems A De Vita, D Pau, L Di Benedetto, A Rubino, F Pétrot, GD Licciardo 2020 23rd euromicro conference on digital system design (DSD), 309-315, 2020 | 29 | 2020 |
| Stream processor for real-time inverse Tone Mapping of Full-HD images GD Licciardo, A D’Arienzo, A Rubino IEEE Transactions on Very Large Scale Integration (VLSI) Systems 23 (11 …, 2014 | 29 | 2014 |
| An analog circuit for accurate OCVD measurements S Bellone, GD Licciardo IEEE Transactions on Instrumentation and Measurement 57 (6), 1112-1117, 2008 | 29 | 2008 |
| Feasibility of 4H-SiC pin diode for sensitive temperature measurements between 20.5 K and 802 K CD Matthus, L Di Benedetto, M Kocher, AJ Bauer, GD Licciardo, A Rubino, ... IEEE Sensors Journal 19 (8), 2871-2878, 2019 | 26 | 2019 |
| Low-power detection and classification for in-sensor predictive maintenance based on vibration monitoring P Vitolo, A De Vita, L Di Benedetto, D Pau, GD Licciardo IEEE Sensors Journal 22 (7), 6942-6951, 2022 | 25 | 2022 |
| A model of the off-behaviour of 4H–SiC power JFETs S Bellone, L Di Benedetto, GD Licciardo Solid-State Electronics 109, 17-24, 2015 | 24 | 2015 |
| Hardware coprocessor for stripe-based interest point detection M Vigliar, GD Licciardo US Patent 9,020,276, 2015 | 24 | 2015 |
| On the crossing-point of 4H-SiC power diodes characteristics L Di Benedetto, GD Licciardo, R Nipoti, S Bellone IEEE Electron Device Letters 35 (2), 244-246, 2013 | 24 | 2013 |
| Optimized design for 4H-SiC power DMOSFET L Di Benedetto, GD Licciardo, T Erlbacher, AJ Bauer, A Rubino IEEE Electron Device Letters 37 (11), 1454-1457, 2016 | 23 | 2016 |
Alfredo RUBINOProfessore di elettronica, Università di SalernoCorreu electrònic verificat a unisa.it
