Fast-response flexible temperature sensors with atomically thin molybdenum disulfide A Daus, M Jaikissoon, AI Khan, A Kumar, RW Grady, KC Saraswat, E Pop
Nano Letters 22 (15), 6135-6140, 2022
48 2022 Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2 A Tang, A Kumar, M Jaikissoon, K Saraswat, HSP Wong, E Pop
ACS Applied Materials & Interfaces 13 (35), 41866-41874, 2021
37 2021 Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale J Martis, S Susarla, A Rayabharam, C Su, T Paule, P Pelz, C Huff, X Xu, ...
Nature communications 14 (1), 4363, 2023
13 2023 Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits J Tournet, D Gosselink, GX Miao, M Jaikissoon, D Langenberg, ...
Superconductor Science and Technology 29 (6), 064004, 2016
13 2016 Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2 JS Ko, Z Zhang, S Lee, M Jaikissoon, RKA Bennett, K Kim, AC Kummel, ...
ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023
8 2023 Temperature monitoring of narrow bandgap semiconductors MC Tam, Y Shi, D Gosselink, M Jaikissoon, ZR Wasilewski
Journal of Vacuum Science & Technology B 35 (2), 2017
8 2017 CMOS-compatible strain engineering for monolayer semiconductor transistors M Jaikissoon, Ç Köroğlu, JA Yang, K Neilson, KC Saraswat, E Pop
Nature Electronics 7 (10), 885-891, 2024
5 2024 Strain Induced by Evaporated-Metal Contacts on Monolayer MoS2 Transistors M Jaikissoon, E Pop, KC Saraswat
IEEE Electron Device Letters, 2024
4 2024 Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved M Jaikissoon, JS Ko, E Pop, KC Saraswat
2023 Device Research Conference (DRC), 1-2, 2023
4 2023 Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers M Jaikissoon, JA Yang, KM Neilson, E Pop, KC Saraswat
2022 Device Research Conference (DRC), 1-2, 2022
4 2022 3D-stacked strained SiGe/Ge gate-all-around (GAA) structure fabricated by 3D Ge condensation J Suh, AC Meng, M Jaikissoon, M Braun, TR Kim, AF Marshall, A Pakzad, ...
2019 Device Research Conference (DRC), 249-250, 2019
4 2019 Achieving 1-nm-Scale Equivalent Oxide Thickness Top-Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors With CMOS-Friendly Approaches JS Ko, AB Shearer, S Lee, K Neilson, M Jaikissoon, K Kim, SF Bent, ...
IEEE Transactions on Electron Devices, 2025
3 2025 Understanding the Impact of Contact-Induced Strain on the Electrical Performance of Monolayer WS2 Transistors L Hoang, M Jaikissoon, C Köroğlu, Z Zhang, RKA Bennett, JH Song, ...
Nano Letters 24 (41), 12768-12774, 2024
3 2024 CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors M Jaikissoon, Ç Köroğlu, JA Yang, KM Neilson, KC Saraswat, E Pop
arXiv preprint arXiv:2405.09792, 2024
3 2024 Lithographic Damage to Two Dimensional Materials Probed by Photoluminescence and Raman Spectroscopy K Neilson, M Tie, JS Ko, M Jaikissoon, J Yang, R Chen, A Majumdar, ...
APS March Meeting Abstracts 2023, D34. 014, 2023
3 2023 Sub-Nanometer Equivalent Oxide Thickness and Threshold Voltage Control Enabled by Silicon Seed Layer on Monolayer MoS2 Transistors JS Ko, S Lee, RKA Bennett, K Schauble, M Jaikissoon, K Neilson, ...
Nano Letters, 2025
1 2025 Direct X-Ray Measurements of Strain in Monolayer MoS K Neilson, M Jaikissoon, D Zakhidov, T Peña, A Salleo, K Saraswat, ...
arXiv preprint arXiv:2411.13658, 2024
2024 Nanoscale MoS2 Transistors on Polyimide for Radio-Frequency Operation E Reato, P Palacios, JA Yang, S Wahid, M Jaikissoon, JS Ko, A Daus, ...
2024 Device Research Conference (DRC), 1-2, 2024
2024 Contact-induced Strain for Enhanced Performance in Monolayer WS2 Transistors L Hoang, M Jaikissoon, Z Zhang, K Saraswat, E Pop, A Mannix
Bulletin of the American Physical Society, 2024
2024 Cmos-Compatible Strain Engineering and Device Scaling of Monolayer Molybdenum Disulfide Transistors M Jaikissoon
Stanford University, 2023
2023 
Denise GosselinkUniversity of Waterloo - Waterloo Institute for NanotechnologyCorreu electrònic verificat a uwaterloo.ca