| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 159 | 2018 |
| Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy Z Zhao, M Jamali, AK Smith, JP Wang Applied Physics Letters 106 (13), 2015 | 135 | 2015 |
| 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 110 | 2019 |
| Fast magnetoelectric device based on current-driven domain wall propagation JP Wang, M Jamali, SS Sapatnekar, MG Mankalale, Z Liang, AK Smith, ... US Patent 10,217,522, 2019 | 72 | 2019 |
| External‐field‐free spin Hall switching of perpendicular magnetic nanopillar with a dipole‐coupled composite structure Z Zhao, AK Smith, M Jamali, JP Wang Advanced Electronic Materials 6 (5), 1901368, 2020 | 67 | 2020 |
| Precessional magnetization induced spin current from CoFeB into Ta M Jamali, A Klemm, JP Wang Applied Physics Letters 103 (25), 2013 | 35 | 2013 |
| Probing dipole coupled nanomagnets using magnetoresistance read A Lyle, A Klemm, J Harms, Y Zhang, H Zhao, JP Wang Applied Physics Letters 98 (9), 2011 | 33 | 2011 |
| CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 29 | 2020 |
| Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model J Kim, H Zhao, Y Jiang, A Klemm, JP Wang, CH Kim 72nd Device Research Conference, 155-156, 2014 | 23 | 2014 |
| Spin transfer torque programming dipole coupled nanomagnet arrays A Lyle, J Harms, T Klein, A Lentsch, D Martens, A Klemm, JP Wang Applied Physics Letters 100 (1), 2012 | 22 | 2012 |
| Spin orbit torque (SOT) memory devices and their methods of fabrication N Sato, A Smith, T Gosavi, S Manipatruni, K Oguz, K O'brien, T Rahman, ... US Patent 11,367,749, 2022 | 19 | 2022 |
| Integration of spintronic interface for nanomagnetic arrays A Lyle, J Harms, T Klein, A Lentsch, A Klemm, D Martens, JP Wang AIP Advances 1 (4), 2011 | 18 | 2011 |
| Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory T Gosavi, S Manipatruni, K Oguz, N Sato, K O'brien, B Buford, C Wiegand, ... US Patent 11,476,412, 2022 | 17 | 2022 |
| Planar Hall effect based characterization of spin orbital torques in Ta/CoFeB/MgO structures M Jamali, Z Zhao, M DC, D Zhang, H Li, AK Smith, JP Wang Journal of Applied Physics 119 (13), 2016 | 16 | 2016 |
| Nonreciprocal behavior of the spin pumping in ultra-thin film of CoFeB M Jamali, AK Smith, JP Wang Journal of Applied Physics 119 (13), 2016 | 13 | 2016 |
| Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory T Gosavi, S Manipatruni, CC Lin, K Oguz, C Wiegand, A Smith, N Sato, ... US Patent 11,374,164, 2022 | 11 | 2022 |
| A fast magnetoelectric device based on current-driven domain wall propagation MG Mankalale, Z Liang, AK Smith, DC Mahendra, M Jamali, JP Wang, ... 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 11 | 2016 |
| External field free spin Hall effect device for perpendicular magnetization reversal using a composite structure with biasing layer AK Smith, M Jamali, Z Zhao, JP Wang arXiv preprint arXiv:1603.09624, 2016 | 11 | 2016 |
| Spin orbit torque memory devices and methods of fabrication K O'brien, C Wiegand, T Rahman, N Sato, G Allen, J Pellegren, A Smith, ... US Patent 11,276,730, 2022 | 10 | 2022 |
| Spin orbit torque memory devices and methods of fabrication T Rahman, J Pellegren, A Smith, C Wiegand, N Sato, T Gosavi, ... US Patent 11,062,752, 2021 | 10 | 2021 |