| A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro Applied Physics Reviews 5 (1), 2018 | 2756 | 2018 |
| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1428 | 2018 |
| Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim Journal of Applied Physics 124 (22), 2018 | 634 | 2018 |
| Technique for the dry transfer of epitaxial graphene onto arbitrary substrates JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ... ACS nano 4 (2), 1108-1114, 2010 | 295 | 2010 |
| Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition S Rafique, L Han, MJ Tadjer, JA Freitas, NA Mahadik, H Zhao Applied Physics Letters 108 (18), 2016 | 251 | 2016 |
| A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3 JA Spencer, AL Mock, AG Jacobs, M Schubert, Y Zhang, MJ Tadjer Applied Physics Reviews 9 (1), 011315, 2022 | 242 | 2022 |
| 2300V reverse breakdown voltage Ga2O3 Schottky rectifiers J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata ECS Journal of Solid State Science and Technology 7 (5), Q92, 2018 | 239 | 2018 |
| Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3 MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019 | 235 | 2019 |
| Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2 N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ... IEEE Electron Device Letters 40 (9), 1399-1402, 2019 | 207 | 2019 |
| Quantifying pulsed laser induced damage to graphene M Currie, JD Caldwell, FJ Bezares, J Robinson, T Anderson, H Chun, ... Applied Physics Letters 99 (21), 2011 | 192 | 2011 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 175 | 2017 |
| Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ... IEEE electron device letters 33 (1), 23-25, 2011 | 169 | 2011 |
| Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao Applied Physics Letters 109 (13), 2016 | 161 | 2016 |
| A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ... ECS Journal of Solid State Science and Technology 5 (9), P468, 2016 | 161 | 2016 |
| Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ... Journal of Electronic Materials 45, 2031-2037, 2016 | 153 | 2016 |
| Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces Z Cheng, L Yates, J Shi, MJ Tadjer, KD Hobart, S Graham Apl Materials 7 (3), 2019 | 135 | 2019 |
| Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor J Kim, MA Mastro, MJ Tadjer, J Kim ACS applied materials & interfaces 9 (25), 21322-21327, 2017 | 128 | 2017 |
| Activation of Mg implanted in GaN by multicycle rapid thermal annealing TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ... Electronics Letters 50 (3), 197-198, 2014 | 115 | 2014 |
| Solar-blind metal-semiconductor-metal photodetectors based on an exfoliated β-Ga2O3 micro-flake S Oh, MA Mastro, MJ Tadjer, J Kim ECS Journal of Solid State Science and Technology 6 (8), Q79, 2017 | 114 | 2017 |
| Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics J Kim, MA Mastro, MJ Tadjer, J Kim ACS applied materials & interfaces 10 (35), 29724-29729, 2018 | 111 | 2018 |
Travis J. AndersonUniversity of FloridaCorreu electrònic verificat a che.ufl.edu