Nagarajan Raghavan

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Michel BosmanNational University of SingaporeCorreu electrònic verificat a nus.edu.sg
Kalya ShubhakarSingapore University of Technology and DesignCorreu electrònic verificat a sutd.edu.sg
Duong PhamSingapore University of Technology and DesignCorreu electrònic verificat a sutd.edu.sg
Andrea FantiniimecCorreu electrònic verificat a imec.be
Robin DegraeveimecCorreu electrònic verificat a imec.be
Alok RanjanChalmers University of TechnologyCorreu electrònic verificat a chalmers.se
GouximecCorreu electrònic verificat a imec.be
Cher Ming TanProfessor of Electronics Department, Chang Gung UniversityCorreu electrònic verificat a ieee.org
Bogdan GovoreanuPrincipal Member of Technical Staff, imecCorreu electrònic verificat a imec.be
Andrea PadovaniAssistant Professor, università degli Studi di Modena e Reggio EmiliaCorreu electrònic verificat a unimore.it
Chen Yang Yin 陈杨胤SanDiskCorreu electrònic verificat a sandisk.com
Guido Groesenekenimec and KU LeuvenCorreu electrònic verificat a imec.be
Gouri Sankar KarVP R&D, IMEC BelgiumCorreu electrònic verificat a imec.be
Attilio BelmonteProgram Manager, imecCorreu electrònic verificat a imec.be
Francesco Maria PuglisiAssociate Professor of Electronics, Università di Modena e Reggio EmiliaCorreu electrònic verificat a unimore.it
Ramesh ThamankarVIT UniversityCorreu electrònic verificat a vit.ac.in
Sunil Singh KushvahaPrincipal Scientist, 2D Physics and QHR, CSIR-National Physical LaboratoryCorreu electrònic verificat a nplindia.org
Zhongrui WangSouthern University of Science and TechnologyCorreu electrònic verificat a sustech.edu.cn
Dimitri LintenImecCorreu electrònic verificat a imec.be
Anson HeryantoGlobal Foundries SingaporeCorreu electrònic verificat a e.ntu.edu.sg

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Nagarajan Raghavan

Associate Professor, Singapore University of Technology & Design (SUTD)

Correu electrònic verificat a sutd.edu.sg - Pàgina d'inici

Dielectric Breakdown Non-Volatile Memory Prognostics AI for Semiconductors Polymer Nanocomposite


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	652	2019
Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications D Ielmini, R Waser John Wiley & Sons, 2015	603	2015
Intrinsic switching variability in HfO₂RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ... 2013 5th IEEE International Memory Workshop, 30-33, 2013	268	2013
Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021	194	2021
Improvement of data retention in HfO₂/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... 2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013	142	2013
Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ... Microelectronic Engineering 147, 171-175, 2015	136	2015
A framework to practical predictive maintenance modeling for multi-state systems CM Tan, N Raghavan Reliability Engineering & System Safety 93 (8), 1138-1150, 2008	118	2008
Heuristic Kalman optimized particle filter for remaining useful life prediction of lithium-ion battery PLT Duong, N Raghavan Microelectronics Reliability 81, 232-243, 2018	115	2018
Hardware implementation of memristor-based artificial neural networks F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ... Nature communications 15 (1), 1974, 2024	109	2024
Data-driven design space exploration and exploitation for design for additive manufacturing Y Xiong, PLT Duong, D Wang, SI Park, Q Ge, N Raghavan, DW Rosen Journal of Mechanical Design 141 (10), 101101, 2019	91	2019
Intrinsic nanofilamentation in resistive switching X Wu, D Cha, M Bosman, N Raghavan, DB Migas, VE Borisenko, ... Journal of Applied Physics 113 (11), 2013	87	2013
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013	84	2013
Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability N Raghavan, R Degraeve, A Fantini, L Goux, DJ Wouters, ... 2013 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2013	72	2013
Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films A Ranjan, N Raghavan, SJ O’shea, S Mei, M Bosman, K Shubhakar, ... Scientific reports 8 (1), 2854, 2018	70	2018
A novel framework for semiconductor manufacturing final test yield classification using machine learning techniques D Jiang, W Lin, N Raghavan Ieee Access 8, 197885-197895, 2020	66	2020
Nanostructure and nanomaterial characterization, growth mechanisms, and applications CI Ossai, N Raghavan Nanotechnology Reviews 7 (2), 209-231, 2018	62	2018
Evolution of Filament Formation in Ni/HfO₂/SiO_x/Si‐Based RRAM Devices X Wu, S Mei, M Bosman, N Raghavan, X Zhang, D Cha, K Li, KL Pey Advanced Electronic Materials 1 (11), 1500130, 2015	60	2015
Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM N Raghavan, KL Pey, W Liu, X Wu, X Li, M Bosman Microelectronic Engineering 88 (7), 1124-1128, 2011	57	2011
Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ... Microelectronic engineering 109, 364-369, 2013	55	2013
Hourglass concept for RRAM: a dynamic and statistical device model R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ... Proceedings of the 21th International Symposium on the Physical and Failure …, 2014	54	2014

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