Prospects for LED lighting S Pimputkar, JS Speck, SP DenBaars, S Nakamura
Nature photonics 3 (4), 180-182, 2009
2422 2009 Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
1463 2000 Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ...
Applied physics letters 68 (5), 643-645, 1996
1105 1996 Strain-induced polarization in wurtzite III-nitride semipolar layers AE Romanov, TJ Baker, S Nakamura, JS Speck
Journal of Applied Physics 100 (2), 2006
902 2006 Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
854 2006 Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop J Iveland, L Martinelli, J Peretti, JS Speck, C Weisbuch
Physical review letters 110 (17), 177406, 2013
787 2013 Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory JS Speck, W Pompe
Journal of applied physics 76 (1), 466-476, 1994
763 * 1994 Structural characterization of nonpolar a -plane GaN thin films grown on r -plane sapphire MD Craven, SH Lim, F Wu, JS Speck, SP DenBaars
Applied Physics Letters 81 (3), 469-471, 2002
673 2002 Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
624 1999 High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
617 2005 Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ...
Applied Physics Letters 72 (6), 692-694, 1998
615 1998 Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura
US Patent 8,148,713, 2012
609 2012 Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy B Heying, R Averbeck, LF Chen, E Haus, H Riechert, JS Speck
Journal of Applied Physics 88 (4), 1855-1860, 2000
605 2000 Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ...
Journal of applied physics 80 (6), 3228-3237, 1996
571 1996 Mosaic structure in epitaxial thin films having large lattice mismatch V Srikant, JS Speck, DR Clarke
Journal of Applied Physics 82 (9), 4286-4295, 1997
558 1997 Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy EJ Tarsa, B Heying, XH Wu, P Fini, SP DenBaars, JS Speck
Journal of applied physics 82 (11), 5472-5479, 1997
532 1997 Dislocation mediated surface morphology of GaN B Heying, EJ Tarsa, CR Elsass, P Fini, SP DenBaars, JS Speck
Journal of Applied Physics 85 (9), 6470-6476, 1999
515 1999 Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
510 2013 Electrical characterization of GaN P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ...
Applied physics letters 73 (7), 975-977, 1998
487 1998 Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire D Kapolnek, XH Wu, B Heying, S Keller, BP Keller, UK Mishra, ...
Applied Physics Letters 67 (11), 1541-1543, 1995
455 1995 
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraCorreu electrònic verificat a engineering.ucsb.edu