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Douglas C Hopkins
Douglas C Hopkins
Professor of Electrical and Computer Engineering
Correu electrònic verificat a NCSU.EDU - Pàgina d'inici
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Thermomigration in Pb–Sn solder joints under joule heating during electric current stressing
H Ye, C Basaran, D Hopkins
Applied Physics Letters 82 (7), 1045-1047, 2003
3112003
Extension of battery life via charge equalization control
ST Hung, DC Hopkins, CR Mosling
IEEE Transactions on Industrial Electronics 40 (1), 96-104, 1993
2761993
Dynamic equalization during charging of serial energy storage elements
DC Hopkins, CR Mosling, ST Hung
IEEE Transactions on Industry Applications 29 (2), 363-368, 1993
891993
Damage mechanics of microelectronics solder joints under high current densities
H Ye, C Basaran, DC Hopkins, D Frear, JK Lin
2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE …, 2004
792004
Mechanical degradation of microelectronics solder joints under current stressing
H Ye, C Basaran, DC Hopkins
International Journal of Solids and Structures 40 (26), 7269-7284, 2003
732003
Numerical simulation of stress evolution during electromigration in IC interconnect lines
H Ye, C Basaran, DC Hopkins
IEEE Transactions on Components and Packaging Technologies 26 (3), 673-681, 2003
662003
Failure modes of flip chip solder joints under high electric current density
C Basaran, H Ye, DC Hopkins, D Frear, JK Lin
652005
THE USE OF EQUALIZING CONVERTERS FOR SERIAL CHARGING OF LONG BATIXRY STRINGS
DC Hopkins, CR Mosling, ST Hung
541991
Misconception of thermal spreading angle and misapplication to IGBT power modules
Y Xu, DC Hopkins
2014 IEEE Applied Power Electronics Conference and Exposition-APEC 2014, 545-551, 2014
492014
Pb phase coarsening in eutectic Pb/Sn flip chip solder joints under electric current stressing
H Ye, C Basaran, DC Hopkins
International Journal of Solids and Structures 41 (9-10), 2743-2755, 2004
482004
Measurement of high electrical current density effects in solder joints
H Ye, DC Hopkins, C Basaran
Microelectronics Reliability 43 (12), 2021-2029, 2003
472003
Evaluation and design of megahertz-frequency off-line zero-current-switched quasi-resonant converters
MM Jovanovic, DC Hopkins, FCY Lee
IEEE transactions on power electronics 4 (1), 136-146, 1989
461989
Deformation of solder joint under current stressing and numerical simulation––I
H Ye, C Basaran, DC Hopkins
International journal of solids and structures 41 (18-19), 4939-4958, 2004
452004
Flexible epoxy-resin substrate based 1.2 kV SiC half bridge module with ultra-low parasitics and high functionality
X Zhao, B Gao, Y Jiang, L Zhang, S Wang, Y Xu, K Nishiguchi, Y Fukawa, ...
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 4011-4018, 2017
412017
Monolithic 4-terminal 1.2 kV/20 a 4H-SiC bi-directional field effect transistor (BiDFET) with integrated JBS diodes
K Han, A Agarwal, A Kanale, BJ Baliga, S Bhattacharya, TH Cheng, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
402020
Experimental damage mechanics of micro/power electronics solder joints under electric current stresses
H Ye, C Basaran, DC Hopkins
International Journal of Damage Mechanics 15 (1), 41-67, 2006
382006
6.0 kV, 100A, 175kHz super cascode power module for medium voltage, high power applications
B Gao, AJ Morgan, Y Xu, X Zhao, DC Hopkins
2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 1288-1293, 2018
372018
Hybridized off-line 2-MHz zero-current-switched quasi-resonant converter
DC Hopkins, MM Jovanovic, FCY Lee, FW Stephenson
IEEE transactions on power electronics 4 (1), 147-154, 1989
361989
High current medium voltage bidirectional solid state circuit breaker using SiC JFET super cascode
U Mehrotra, B Ballard, DC Hopkins
2020 IEEE Energy Conversion Congress and Exposition (ECCE), 6049-6056, 2020
352020
Decomposition and electro-physical model creation of the CREE 1200V, 50A 3-Ph SiC module
AJ Morgan, Y Xu, DC Hopkins, I Husain, W Yu
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2141-2146, 2016
322016
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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