Erin C. Young

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Jim SpeckProfessor of Materials, UCSBCorreu electrònic verificat a ucsb.edu
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraCorreu electrònic verificat a engineering.ucsb.edu
Thomas TiedjeElectrical and Computer Engineering, University of Victoria, Victoria, BCCorreu electrònic verificat a uvic.ca
Aleksei RomanovITMO UniversityCorreu electrònic verificat a niuitmo.ru
Benjamin P. YonkeeUniversity of California, Santa BarbaraCorreu electrònic verificat a umail.ucsb.edu
John T. LeonardAppleCorreu electrònic verificat a umail.ucsb.edu
Ingrid KoslowMaterials Department, University of California Santa BarbaraCorreu electrònic verificat a umail.ucsb.edu
Matthew T. HardyElectronics Science and Technology Division, Naval Research LaboratoryCorreu electrònic verificat a nrl.navy.mil
Robert M. FarrellAssistant Professor, ECE Department, University of Wisconsin–MadisonCorreu electrònic verificat a wisc.edu
Dan HaegerAppleCorreu electrònic verificat a apple.com
Jordan R. LangStaff Scientist, Solar JunctionCorreu electrònic verificat a sj-solar.com
Christophe HurniFacebookCorreu electrònic verificat a engr.ucsb.edu
David A. BrowneGoogle Quantum AICorreu electrònic verificat a google.com
David G. CookeAssociate Professor, Dept. of Physics, McGill UniversityCorreu electrònic verificat a mcgill.ca
Frank HegmannProfessor, Department of Physics, University of Alberta, CanadaCorreu electrònic verificat a ualberta.ca
Glenn BeltzProfessor of Mechanical Engineering, University of California, Santa BarbaraCorreu electrònic verificat a engineering.ucsb.edu
Humberto ForondaTechnical University BerlinCorreu electrònic verificat a physik.tu-berlin.de
Brian M. McSkimmingThe University of OklahomaCorreu electrònic verificat a ou.edu
Umesh MishraUCSBCorreu electrònic verificat a ece.ucsb.edu
Daniel FeezellUniversity of New MexicoCorreu electrònic verificat a unm.edu

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Erin C. Young

University of California, Santa Barbara

Correu electrònic verificat a engineering.ucsb.edu

semiconductors nitrides GaAsBi strain relaxation molecular beam epitaxy


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Giant Spin-Orbit Bowing in B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje Physical review letters 97 (6), 067205, 2006	505	2006
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices RM Farrell, EC Young, F Wu, SP DenBaars, JS Speck Semiconductor Science and Technology 27 (2), 024001, 2012	315	2012
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy AE Romanov, EC Young, F Wu, A Tyagi, CS Gallinat, S Nakamura, ... Journal of Applied Physics 109 (10), 2011	195	2011
Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact JT Leonard, EC Young, DA Cohen, BP Yonkee, T Margalith, ... Applied Physics Letters 107 (9), 091105, 2015	170	2015
Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy DG Cooke, FA Hegmann, EC Young, T Tiedje Applied physics letters 89 (12), 2006	164	2006
Surfactant enhanced growth of GaNAs and InGaNAs using bismuth S Tixier, M Adamcyk, EC Young, JH Schmid, T Tiedje Journal of crystal growth 251 (1-4), 449-454, 2003	152	2003
Hybrid tunnel junction contacts to III–nitride light-emitting diodes EC Young, BP Yonkee, F Wu, SH Oh, SP DenBaars, S Nakamura, ... Applied Physics Express 9 (2), 022102, 2016	150	2016
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In) GaN epitaxial layers grown on semipolar (112¯ 2) GaN free standing substrates A Tyagi, F Wu, EC Young, A Chakraborty, H Ohta, R Bhat, K Fujito, ... Applied Physics Letters 95 (25), 2009	134	2009
Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN MB McLaurin, A Hirai, E Young, F Wu, JS Speck Japanese journal of applied physics 47 (7R), 5429, 2008	129	2008
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy DA Browne, EC Young, JR Lang, CA Hurni, JS Speck Journal of Vacuum Science & Technology A 30 (4), 2012	112	2012
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− xBix G Pettinari, A Polimeni, M Capizzi, JH Blokland, PCM Christianen, ... Applied Physics Letters 92 (26), 2008	107	2008
Bismuth surfactant growth of the dilute nitride GaNxAs1− x EC Young, S Tixier, T Tiedje Journal of crystal growth 279 (3-4), 316-320, 2005	107	2005
Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy EC Young, F Wu, AE Romanov, A Tyagi, CS Gallinat, SP DenBaars, ... Applied physics express 3 (1), 011004, 2010	102	2010
Growth and properties of the dilute bismide semiconductor GaAs1− xBix a complementary alloy to the dilute nitrides T Tiedje, EC Young, A Mascarenhas International Journal of Nanotechnology 5 (9-12), 963-983, 2008	102	2008
Bi isoelectronic impurities in GaAs S Francoeur, S Tixier, E Young, T Tiedje, A Mascarenhas Physical Review B—Condensed Matter and Materials Physics 77 (8), 085209, 2008	101	2008
Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction BP Yonkee, EC Young, SP DenBaars, S Nakamura, JS Speck Applied Physics Letters 109, 191104, 2016	96	2016
Band gaps of the dilute quaternary alloys GaNxAs1− x− yBiy and Ga1− yInyNxAs1− x S Tixier, SE Webster, EC Young, T Tiedje, S Francoeur, A Mascarenhas, ... Applied Physics Letters 86 (11), 2005	94	2005
Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact BP Yonkee, EC Young, C Lee, JT Leonard, SP DenBaars, JS Speck, ... Optics Express 24 (7), 7816-7822, 2016	86	2016
Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface H Ohta, F Wu, A Tyagi, A Chakraborty, JS Speck, SP DenBaars, ... US Patent 9,159,553, 2015	82	2015
GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition SG Lee, CA Forman, C Lee, J Kearns, EC Young, JT Leonard, DA Cohen, ... Applied Physics Express 11 (6), 062703, 2018	76	2018

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