William Vandenberghe

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Maarten Van de PutimecCorreu electrònic verificat a imec.be
Massimo V FischettiThe University of Texas at DallasCorreu electrònic verificat a utdallas.edu
Bart SoreePrincipal scientist @ imec and part-time professor University Antwerp & KULeuvenCorreu electrònic verificat a imec.be
Anne S VerhulstPrincipal Member of Technical Staff, imec, BelgiumCorreu electrònic verificat a imec.be
Guido Groesenekenimec and KU LeuvenCorreu electrònic verificat a imec.be
Sabyasachi TiwariThe University of Texas at AustinCorreu electrònic verificat a austin.utexas.edu
Akash LaturiaGraduate Research Assistant, MSEN, The University of Texas at DallasCorreu electrònic verificat a utdallas.edu
Ali SaadatKilby Labs - Texas InstrumentsCorreu electrònic verificat a ti.com
Gautam GaddemaneimecCorreu electrònic verificat a imec.be
Henry L. (Hal) EdwardsTI Fellow at Texas InstrumentsCorreu electrònic verificat a ti.com
Robert M. WallaceUniversity of Texas at DallasCorreu electrònic verificat a utdallas.edu
Jingtian FangSynopsys Inc.Correu electrònic verificat a synopsys.com
Devin Verreckimec, LeuvenCorreu electrònic verificat a imec.be
Rafik AddouOregon State UniversityCorreu electrònic verificat a oregonstate.edu
Julia W.P. HsuUniversity of Texas at DallasCorreu electrònic verificat a mailaps.org
Quentin SmetsimecCorreu electrònic verificat a imec.be
Yifan NieLawrence Berkeley National Laboratory, Synopsys Inc.Correu electrònic verificat a lbl.gov
geoffrey pourtoisimecCorreu electrònic verificat a imec.be
Manuel Quevedo-lopezUniversity of Texas at DallasCorreu electrònic verificat a utdallas.edu
Sarah R. EvansResearch Assistant, Duke UniversityCorreu electrònic verificat a duke.edu

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William Vandenberghe

Associate Professor at U.T. Dallas, dept. Materials Science & Engineering

Correu electrònic verificat a utdallas.edu - Pàgina d'inici

Theoretical Nanoelectronics DFT transport TCAD


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk A Laturia, ML Van de Put, WG Vandenberghe npj 2D Materials and Applications 2 (1), 6, 2018	851	2018
Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Sorée, G Groeseneken, ... Electron Devices, IEEE Transactions on 59 (2), 292-301, 2011	495	2011
Tunnel field-effect transistor without gate-drain overlap AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken Applied Physics Letters 91 (5), 2007	489	2007
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken Journal of Applied Physics 107 (2), 2010	285	2010
Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ... IEEE electron device letters 29 (12), 1398-1401, 2008	222	2008
Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken Journal of Applied Physics 104 (6), 2008	169	2008
Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe₂ and W_xMo_1–xTe₂ Alloy C Zhang, S Kc, Y Nie, C Liang, WG Vandenberghe, RC Longo, Y Zheng, ... ACS nano 10 (8), 7370-7375, 2016	162	2016
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ... IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012	162	2012
Figure of merit for and identification of sub-60 mV/decade devices WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ... Applied Physics Letters 102, 013510, 2013	134	2013
High‐mobility helical tellurium field‐effect transistors enabled by transfer‐free, low‐temperature direct growth G Zhou, R Addou, Q Wang, S Honari, CR Cormier, L Cheng, R Yue, ... Advanced Materials 30 (36), 1803109, 2018	128	2018
Analytical model for point and line tunneling in a tunnel field-effect transistor W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus 2008 international conference on simulation of semiconductor processes and …, 2008	126	2008
A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance RM Imenabadi, M Saremi, WG Vandenberghe IEEE transactions on electron devices 64 (11), 4752-4758, 2017	125	2017
Impact of field-induced quantum confinement in tunneling field-effect devices WG Vandenberghe, B Sorée, W Magnus, G Groeseneken, MV Fischetti Applied Physics Letters 98 (14), 2011	125	2011
Analytical model for a tunnel field-effect transistor WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008	116	2008
Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in two-dimensional crystals with broken horizontal mirror symmetry MV Fischetti, WG Vandenberghe Physical Review B 93 (15), 155413, 2016	111	2016
Imperfect two-dimensional topological insulator field-effect transistors WG Vandenberghe, MV Fischetti Nature communications 8 (1), 14184, 2017	108	2017
Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview G Gaddemane, WG Vandenberghe, ML Van de Put, S Chen, S Tiwari, ... Physical Review B 98 (11), 115416, 2018	101	2018
Advanced physics of electron transport in semiconductors and nanostructures MV Fischetti, WG Vandenberghe Springer, 2016	98	2016
Microscopic dielectric permittivities of graphene nanoribbons and graphene J Fang, WG Vandenberghe, MV Fischetti Physical Review B 94 (4), 045318, 2016	83	2016
Tunnel field-effect transistor with gated tunnel barrier WG Vandenberghe, AS Verhulst US Patent 8,120,115, 2012	79	2012

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