| Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits JL Weyher, H Ashraf, PR Hageman Applied Physics Letters 95 (3), 2009 | 55 | 2009 |
| Thick GaN layers grown by HVPE: Influence of the templates H Ashraf, JL Weyher, GWG van Dreumel, A Gzregorzyck, PR Hageman Journal of crystal growth 310 (17), 3957-3963, 2008 | 34 | 2008 |
| Interface state density of free-standing GaN Schottky diodes SM Faraz, H Ashraf, MI Arshad, PR Hageman, M Asghar, Q Wahab Semiconductor science and technology 25 (9), 095008, 2010 | 24 | 2010 |
| Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy H Ashraf, MI Arshad, SM Faraz, Q Wahab, PR Hageman, M Asghar Journal of Applied Physics 108 (10), 2010 | 22 | 2010 |
| Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism H Ashraf, R Kudrawiec, JL Weyher, J Serafinczuk, J Misiewicz, ... Journal of crystal growth 312 (16-17), 2398-2403, 2010 | 14 | 2010 |
| On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes T Bohnen, AEF De Jong, WJP Van Enckevort, JL Weyher, ... Journal of Crystal Growth 311 (23-24), 4685-4691, 2009 | 14 | 2009 |
| Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE T Bohnen, H Ashraf, GWG Van Dreumel, S Verhagen, JL Weyher, ... Journal of Crystal Growth 312 (18), 2542-2550, 2010 | 13 | 2010 |
| Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment H Ashraf, DVS Rao, D Gogova, D Siche, R Fornari, CJ Humphreys, ... Journal of crystal growth 312 (4), 595-600, 2010 | 11 | 2010 |
| Investigation of the Symmetries of the Phonons in 4H and 6H-SiC by Infrared Absorption and Raman Spectroscopy H Ashraf Institutionen för fysik, kemi och biologi, 2005 | 7 | 2005 |
| Bulk Growth of GaN by HVPE H Ashraf, R Kudrawiec, J Misiewicz, PR Hageman CS MANTECH Conference, 2009 | 1 | 2009 |
| The nucleation of HCl and Cl2‐based HVPE GaN on mis‐oriented sapphire substrates T Bohnen, GWG van Dreumel, JL Weyher, WJP van Enckevort, H Ashraf, ... physica status solidi c 7 (7‐8), 1749-1755, 2010 | | 2010 |
| Development of HVPE process for bulk-like growth of GaN H Ashraf SI:[Sn], 2010 | | 2010 |
| Available online at www. sciencedirect. com H Ashraf, JL Weyher, GWG van Dreumel, M Bockowski, P Strak, ... strates 310, 3953, 2008 | | 2008 |
| Recognition of chemical (electrically active) non-homogeneities in thick HVPE-grown GaN layers J Weyher, R Lewandowska, H Ashraf, BL Lucznik, I Grzegory | | |
