Matthew T. Hardy

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D S KatzerUS Naval Research LaboratoryCorreu electrònic verificat a nrl.navy.mil
David J. MeyerNaval Research LaboratoryCorreu electrònic verificat a nrl.navy.mil
Neeraj NepalUS Naval Research LaboratoryCorreu electrònic verificat a nrl.navy.mil
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraCorreu electrònic verificat a engineering.ucsb.edu
Brian P DowneyUS Naval Research LaboratoryCorreu electrònic verificat a nrl.navy.mil
Jim SpeckProfessor of Materials, UCSBCorreu electrònic verificat a ucsb.edu
Eric N. JinResearch Physicist at U.S. Naval Research LaboratoryCorreu electrònic verificat a nrl.navy.mil
Kate M Kelchner, PhDMeta Reality LabsCorreu electrònic verificat a ece.ucsb.edu
Vikrant GokhaleUS Naval Research Laboratory | NIST | University of MichiganCorreu electrònic verificat a nrl.navy.mil
Daniel FeezellUniversity of New MexicoCorreu electrònic verificat a unm.edu
Virginia WheelerNRLCorreu electrònic verificat a nrl.navy.mil
Chia-Yen HuangNational Yang Ming Chiao Tung University, Department of PhotonicsCorreu electrònic verificat a nycu.edu.tw
Robert M. FarrellAssistant Professor, ECE Department, University of Wisconsin–MadisonCorreu electrònic verificat a wisc.edu
Ingrid KoslowMaterials Department, University of California Santa BarbaraCorreu electrònic verificat a umail.ucsb.edu
Erin C. YoungUniversity of California, Santa BarbaraCorreu electrònic verificat a engineering.ucsb.edu
Dan HaegerAppleCorreu electrònic verificat a apple.com
Aleksei RomanovITMO UniversityCorreu electrònic verificat a niuitmo.ru
John A. RogersSimpson/Querrey Professor, Northwestern UniversityCorreu electrònic verificat a northwestern.edu
Thomas Oscar McConkieThe Design Knowlege CompanyCorreu electrònic verificat a tdkc.com
Andrew C. LangMaterials Research Engineer - US Naval Research LaboratoryCorreu electrònic verificat a nrl.navy.mil

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Matthew T. Hardy

Electronics Science and Technology Division, Naval Research Laboratory

Correu electrònic verificat a nrl.navy.mil

millimeter wave devices epitaxial growth GaN scandium aluminum nitride


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
High-resolution electrohydrodynamic jet printing JU Park, M Hardy, SJ Kang, K Barton, K Adair, DK Mukhopadhyay, ... Nature materials 6 (10), 782-789, 2007	1730	2007
Superluminescent diodes by crystallographic etching MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ... US Patent App. 12/913,638, 2011	257	2011
Group III-nitride lasers: a materials perspective MT Hardy, DF Feezell, SP DenBaars, S Nakamura Materials Today 14 (9), 408-415, 2011	194	2011
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer Applied Physics Letters 110 (16), 2017	155	2017
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...	119	2010
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ... Applied physics express 2 (8), 082102, 2009	80	2009
444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ... Applied Physics Letters 100 (2), 2012	76	2012
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ... Applied Physics Express 13 (6), 065509, 2020	67	2020
Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ... Applied Physics Letters 101 (12), 2012	65	2012
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes MT Hardy, CO Holder, DF Feezell, S Nakamura, JS Speck, DA Cohen, ... Applied Physics Letters 103 (8), 2013	63	2013
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ... Applied Physics Express 2 (7), 071003, 2009	59	2009
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ... IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016	56	2016
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ... Applied Physics Express 8 (8), 085501, 2015	55	2015
Stress relaxation and critical thickness for misfit dislocation formation in (10-10) and (30-3-1) InGaN/GaN heteroepitaxy PS Hsu, MT Hardy, EC Young, AE Romanov, SP DenBaars, S Nakamura, ... APPLIED PHYSICS LETTERS 100, 171917, 2012	55	2012
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ... Journal of Vacuum Science & Technology A 38 (6), 2020	54	2020
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ... Applied Physics Letters 103 (15), 2013	52	2013
Trace analysis of non-basal plane misfit stress relaxation in (20-21) and (30-3-1) semipolar InGaN/GaN heterostructures MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ... Applied Physics Letters 100 (20), 202103-202103-4, 2012	51	2012
Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017	50	2017
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ... Applied Physics Letters 99 (24), 2011	50	2011
m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching MT Hardy, KM Kelchner, YD Lin, PS Hsu, K Fujito, H Ohta, JS Speck, ... Applied Physics Express 2 (12), 121004, 2009	49	2009

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