Remis Gaska

Citada per

	Totes	Des de 2020
Citacions	17234	2685
Índex h	71	26
Índex i10	207	71

860

430

215

645

1998199920002001200220032004200520062007200820092010201120122013201420152016201720182019202020212022202320242025138 310 338 410 600 716 692 799 738 648 714 693 678 727 677 794 799 860 835 792 713 759 684 629 543 470 328 31

Accés públic

Mostra-ho tot

5 articles

0 articles

disponibles

no disponibles

Es basa en els requisits de les agències que proporcionen el finançament

Coautors

Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicCorreu electrònic verificat a rpi.edu
Grigory SiminUniversity of South CarolinaCorreu electrònic verificat a engr.sc.edu
Max ShatalovCVD Equipment CorporationCorreu electrònic verificat a cvdequipment.com
Nezih PalaElectrical & Computer Engineering, Florida International UniversityCorreu electrònic verificat a fiu.edu
Juras MickeviciusVilnius UniversityCorreu electrònic verificat a ff.vu.lt
Craig MoeAkoustis TechnologiesCorreu electrònic verificat a akoustis.com
Saulius Jursenasprofesorius, Vilniaus universitetasCorreu electrònic verificat a ff.vu.lt
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences and Technical University WARSAW POLANDCorreu electrònic verificat a unipress.waw.pl
Marcinkevicius SauliusKTH Royal Institute of TechnologyCorreu electrònic verificat a kth.se
Karolis KazlauskasChief Researcher, Vilnius UniversityCorreu electrònic verificat a ff.vu.lt
Ramunas AleksiejunasVilnius UniversityCorreu electrònic verificat a ff.vu.lt
Jonas JurkevičiusResearch fellow, Vilnius UniversityCorreu electrònic verificat a ff.vu.lt
Thomas M KatonaCalifornia Polytechnic State UniversityCorreu electrònic verificat a calpoly.edu
Kai LiuTAECCorreu electrònic verificat a taec.toshiba.com
Gregory SniderProfessor of Electrical EngineeringCorreu electrònic verificat a nd.edu
Alexei O. OrlovResearch Professor of Electrical Engineering, University of Notre DameCorreu electrònic verificat a nd.edu
Ilesanmi AdesidaNazarbayev University and University of IllinoisCorreu electrònic verificat a nu.edu.kz
Alok KumarProfessor of Finance, University of MiamiCorreu electrònic verificat a miami.edu
Himanshu SaxenaIIT KGP, IIT Kanpur, University of Central FloridaCorreu electrònic verificat a knights.ucf.edu
R PealePhysics, University of Central Florida, Lehigh University, Cornell UniversityCorreu electrònic verificat a ucf.edu

Segueix

Remis Gaska

UVTON, Inc.

Correu electrònic verificat a uvton.com - Pàgina d'inici

science


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Introduction to solid-state lighting A Žukauskas, M Shur, R Gaska (No Title), 2002	994	2002
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	538	2012
Nonresonant detection of terahertz radiation in field effect transistors LCB W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, MS Shur ... Journal of Applied Physics 91 (11), 9346-9353, 2002	503	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	481	2000
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates MA Khan, X Hu, A Tarakji, G Simin, J Yang, R Gaska, MS Shur Applied Physics Letters 77 (9), 1339-1341, 2000	433	2000
Self-heating in high-power AlGaN-GaN HFETs R Gaska, A Osinsky, JW Yang, MS Shur IEEE Electron Device Letters 19 (3), 89-91, 1998	394	1998
Deep-ultraviolet light-emitting diodes MS Shur, R Gaska IEEE Transactions on electron devices 57 (1), 12-25, 2009	387	2009
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates R Gaska, JW Yang, A Osinsky, Q Chen, MA Khan, AO Orlov, GL Snider, ... Applied Physics Letters 72 (6), 707-709, 1998	330	1998
–metal–insulator–semiconductor heterostructure field–effect transistors X Hu, A Koudymov, G Simin, J Yang, MA Khan, A Tarakji, MS Shur, ... Applied Physics Letters 79 (17), 2832-2834, 2001	329	2001
Low noise p-π-n GaN ultraviolet photodetectors A Osinsky, S Gangopadhyay, R Gaska, B Williams, MA Khan, ... Applied Physics Letters 71 (16), 2334-2336, 1997	322	1997
White light emitting device and method A Zukauskas, R Gaska, M Shur US Patent 7,095,056, 2006	288	2006
High-temperature performance of AlGaN/GaN HFETs on SiC substrates R Gaska, Q Chen, J Yang, A Osinsky, MA Khan, MS Shur IEEE Electron Device Letters 18 (10), 492-494, 1997	288	1997
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate X Hu, G Simin, J Yang, MA Khan, R Gaska, MS Shur Electronics Letters 36 (8), 753-754, 2000	271	2000
Electron mobility in modulation-doped AlGaN–GaN heterostructures R Gaska, MS Shur, AD Bykhovski, AO Orlov, GL Snider Applied physics letters 74 (2), 287-289, 1999	244	1999
High power AlGaN ultraviolet light emitters M Shatalov, W Sun, R Jain, A Lunev, X Hu, A Dobrinsky, Y Bilenko, ... Semiconductor Science and Technology 29 (8), 084007, 2014	218	2014
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes V Adivarahan, S Wu, JP Zhang, A Chitnis, M Shatalov, V Mandavilli, ... Applied Physics Letters 84 (23), 4762-4764, 2004	214	2004
Visible-blind GaN Schottky barrier detectors grown on Si (111) A Osinsky, S Gangopadhyay, JW Yang, R Gaska, D Kuksenkov, H Temkin, ... Applied physics letters 72 (5), 551-553, 1998	207	1998
Optimization of white polychromatic semiconductor lamps A Žukauskas, R Vaicekauskas, F Ivanauskas, R Gaska, MS Shur Applied Physics Letters 80 (2), 234-236, 2002	205	2002
Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells E Kuokstis, JW Yang, G Simin, MA Khan, R Gaska, MS Shur Applied Physics Letters 80 (6), 977-979, 2002	200	2002
Lattice and energy band engineering in AlInGaN/GaN heterostructures MA Khan, JW Yang, G Simin, R Gaska, MS Shur, HC zur Loye, ... Applied Physics Letters 76 (9), 1161-1163, 2000	186	2000

En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.

Articles 1–20

Cites per any

Cites duplicades

Cites combinades

Addició de coautorsCoautors

Segueix

Citada per

Coautors