Luke F. Lester

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Kevin J MalloyProfessor Emeritus, University of New MexicoCorreu electrònic verificat a unm.edu
Vassilios KovanisBradley Department of Electrical and Computer EngineeringCorreu electrònic verificat a vt.edu
Michael PochetAir Force Research LaboratoryCorreu electrònic verificat a us.af.mil
D.L. Huffaker, Diana Huffaker, Diana L...Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLACorreu electrònic verificat a uta.edu
George T. WangSandia National LaboratoriesCorreu electrònic verificat a sandia.gov
Ting Shan LukSandia National LaboratoriesCorreu electrònic verificat a sandia.gov
Antonio HurtadoUniversity of StrathclydeCorreu electrònic verificat a strath.ac.uk
Igal BrenerSenior Scientist, Sandia National LabsCorreu electrònic verificat a sandia.gov
Chang-Yi LinUniversity of New MexicoCorreu electrònic verificat a intel.com
Jeremy B. WrightPrincipal Member of Technical Staff, Sandia National LaboratoriesCorreu electrònic verificat a sandia.gov
Ganesh BalakrishnanProfessor, ECE UNM, Director NM EPSCoRCorreu electrònic verificat a unm.edu
Stephen D HerseeEmeritus Professor of Electrical Engineering, University of New Mexico Correu electrònic verificat a chtm.unm.edu
Jesse MeeElectrical Engineer - Air Force Research LaboratoriesCorreu electrònic verificat a kirtland.af.mil
M J Adamsessex OR southampton OR cardiff OR martleshamCorreu electrònic verificat a essex.ac.uk
L. Ralph DawsonResearch Professor of ECE, University of New MexicoCorreu electrònic verificat a chtm.unm.edu
David MurrellPhotonics Engineer, Lockheed MartinCorreu electrònic verificat a lmco.com
Christos ChristodoulouUniversity of New MexicoCorreu electrònic verificat a unm.edu
Nassim RahimiPhD Candidate and Research Assistant at University of New MexicoCorreu electrònic verificat a unm.edu
Dr. R. B. LaghumavarapuStaff Research Associate-III, University of California Los AngelesCorreu electrònic verificat a ucla.edu
Stefan PrebleRochester Institute of TechnologyCorreu electrònic verificat a rit.edu

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Luke F. Lester

Roanoke Electric Steel Professor Emeritus

Correu electrònic verificat a vt.edu

quantum dot lasers quantum photonics semiconductor lasers


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Extremely low room-temperature threshold current density diode lasers using InAs dots in In0. 15Ga0. 85As quantum well GT Liu, A Stintz, H Li, KJ Malloy, LF Lester Electronics Letters 35 (14), 1163-1165, 1999	653	1999
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes TC Newell, DJ Bossert, A Stintz, B Fuchs, KJ Malloy, LF Lester IEEE Photonics Technology Letters 11 (12), 1527-1529, 2002	385	2002
Optical characteristics of 1.24-μm InAs quantum-dot laser diodes LF Lester, A Stintz, H Li, TC Newell, EA Pease, BA Fuchs, KJ Malloy IEEE Photonics Technology Letters 11 (8), 931-933, 1999	286	1999
Room-temperature operation of InAs quantum-dash lasers on InP [001] RH Wang, A Stintz, PM Varangis, TC Newell, H Li, KJ Malloy, LF Lester IEEE Photonics Technology Letters 13 (8), 767-769, 2001	280	2001
GaSb∕ GaAs type II quantum dot solar cells for enhanced infrared spectral response RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ... Applied Physics Letters 90 (17), 2007	254	2007
Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes PG Eliseev, H Li, A Stintz, GT Liu, TC Newell, KJ Malloy, LF Lester Applied Physics Letters 77 (2), 262-264, 2000	243	2000
Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers X Huang, A Stintz, H Li, LF Lester, J Cheng, KJ Malloy Applied Physics Letters 78 (19), 2825-2827, 2001	229	2001
Improved device performance of InAs∕ GaAs quantum dot solar cells with GaP strain compensation layers RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ... Applied Physics Letters 91 (24), 2007	215	2007
The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures GT Liu, A Stintz, H Li, TC Newell, AL Gray, PM Varangis, KJ Malloy, ... IEEE Journal of Quantum Electronics 36 (11), 1272-1279, 2000	205	2000
Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure A Stintz, GT Liu, H Li, LF Lester, KJ Malloy IEEE Photonics Technology Letters 12 (6), 591-593, 2000	196	2000
Low-threshold quantum dot lasers with 201nm tuning range PM Varangis, H Li, GT Liu, TC Newell, A Stintz, B Fuchs, KJ Malloy, ... Electronics Letters 36 (18), 1, 2000	185	2000
Single-mode GaN nanowire lasers Q Li, JB Wright, WW Chow, TS Luk, I Brener, LF Lester, GT Wang Optics express 20 (16), 17873-17879, 2012	184	2012
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers PG Eliseev, H Li, T Liu, TC Newell, LF Lester, KJ Malloy IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 135-142, 2002	144	2002
Nonalloyed Ti/Al ohmic contacts to n‐type GaN using high‐temperature premetallization anneal LF Lester, JM Brown, JC Ramer, L Zhang, SD Hersee, JC Zolper Applied physics letters 69 (18), 2737-2739, 1996	140	1996
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor T Henderson, MI Aksun, CK Peng, H Morkoc, PC Chao, PM Smith, ... IEEE electron device letters 7 (12), 649-651, 1986	129	1986
Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp H Su, LF Lester Journal of Physics D: Applied Physics 38 (13), 2112, 2005	128	2005
High-performance InAs quantum-dot lasers near 1.3 μm Y Qiu, P Gogna, S Forouhar, A Stintz, LF Lester Applied Physics Letters 79 (22), 3570-3572, 2001	125	2001
Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3-InAs–GaAs Quantum-Dot Lasers F Grillot, B Dagens, JG Provost, H Su, LF Lester IEEE Journal of Quantum Electronics 44 (10), 946-951, 2008	122	2008
Ultra-low-noise cryogenic high-electron-mobility transistors KHG Duh, MW Pospieszalski, WF Kopp, P Ho, AA Jabra, PC Chao, ... IEEE transactions on electron devices 35 (3), 249-256, 1988	105	1988
QD Lasers US Patent 20,020,114,367, 0	100*

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