Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes KF Li, DS Ong, JPR David, GJ Rees, RC Tozer, PN Robson, R Grey
IEEE Transactions on Electron Devices 45 (10), 2102-2107, 1998
166 1998 A simple model to determine multiplication and noise in avalanche photodiodes DS Ong, KF Li, GJ Rees, JPR David, PN Robson
Journal of applied physics 83 (6), 3426-3428, 1998
119 1998 A Monte Carlo investigation of multiplication noise in thin p/sup+/-in/sup+/GaAs avalanche photodiodes DS Ong, KF Li, GJ Rees, GM Dunn, JPR David, PN Robson
IEEE Transactions on Electron Devices 45 (8), 1804-1810, 1998
104 1998 A simple model for avalanche multiplication including deadspace effects SA Plimmer, JPR David, DS Ong, KF Li
IEEE Transactions on Electron Devices 46 (4), 769-775, 1999
80 1999 Effect of dead space on avalanche speed [APDs] JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
59 2002 Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs DS Ong, KF Li, SA Plimmer, GJ Rees, JPR David, PN Robson
Journal of Applied Physics 87 (11), 7885-7891, 2000
55 2000 First-principles studies on the superconductivity of aluminene KH Yeoh, TL Yoon, DS Ong, TL Lim
Applied Surface Science 445, 161-166, 2018
38 2018 The merits and limitations of local impact ionization theory [APDs] SA Plimmer, JPR David, DS Ong
IEEE Transactions on Electron Devices 47 (5), 1080-1088, 2000
35 2000 Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations S Vainshtein, V Yuferev, V Palankovski, DS Ong, J Kostamovaara
Applied Physics Letters 92 (6), 2008
34 2008 Modeling anomalous charge carrier transport in disordered organic semiconductors using the fractional drift-diffusion equation KY Choo, SV Muniandy, KL Woon, MT Gan, DS Ong
Organic Electronics 41, 157-165, 2017
31 2017 First-principles study of monolayer Be2C as an anode material for lithium-ion batteries KH Yeoh, KH Chew, YZ Chu, TL Yoon, R Rusi, DS Ong
Journal of Applied Physics 126 (12), 2019
30 2019 Low excess noise characteristics in thin avalanche region GaAs diodes KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, PN Robson, R Grey
Electronics Letters 34 (1), 125-126, 1998
28 1998 Avalanche speed in thin avalanche photodiodes DS Ong, GJ Rees, JPR David
Journal of applied physics 93 (7), 4232-4239, 2003
26 2003 Analytical band Monte Carlo simulation of electron impact ionization in In0. 53Ga0. 47As KY Choo, DS Ong
Journal of applied physics 96 (10), 5649-5653, 2004
25 2004 Resonant tunneling and quantum cascading for optimum room-temperature generation of THz signals VP Sirkeli, O Yilmazoglu, DS Ong, S Preu, F Küppers, HL Hartnagel
IEEE Transactions on Electron Devices 64 (8), 3482-3488, 2017
23 2017 Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs] KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, SA Plimmer, KY Chang, ...
IEEE transactions on electron devices 47 (5), 910-914, 2000
23 2000 Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects KH Yeoh, KH Chew, TL Yoon, R Rusi, DS Ong
Journal of Applied Physics 127 (1), 2020
21 2020 Noise and reliability measurement of a three-axis micro-accelerometer F Mohd-Yasin, N Zaiyadi, DJ Nagel, DS Ong, CE Korman, AR Faidz
Microelectronic engineering 86 (4-6), 991-995, 2009
21 2009 Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes SL Tan, DS Ong, HK Yow
Journal of Applied Physics 102 (4), 2007
21 2007 Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes C Groves, JPR David, GJ Rees, DS Ong
Journal of applied physics 95 (11), 6245-6251, 2004
19 2004 