Catalyst design with atomic layer deposition BJ O’Neill, DHK Jackson, J Lee, C Canlas, PC Stair, CL Marshall, ...
Acs Catalysis 5 (3), 1804-1825, 2015
801 2015 Long-Range Order in TS Kuan, TF Kuech, WI Wang, EL Wilkie
Physical review letters 54 (3), 201, 1985
571 * 1985 Surface chemistry of prototypical bulk II− VI and III− V semiconductors and implications for chemical sensing F Seker, K Meeker, TF Kuech, AB Ellis
Chemical reviews 100 (7), 2505-2536, 2000
459 2000 Determination of the interdiffusion of Al and Ga in undoped (Al, Ga) As/GaAs quantum wells TE Schlesinger, T Kuech
Applied physics letters 49 (9), 519-521, 1986
324 1986 Mechanism of carbon incorporation in MOCVD GaAs TF Kuech, E Veuhoff
Journal of Crystal Growth 68 (1), 148-156, 1984
308 1984 Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP pin photodiodes transferred on silicon P Chen, WV Chen, PKL Yu, CW Tang, KM Lau, L Mawst, C Paulson, ...
Applied Physics Letters 94 (1), 2009
259 2009 InP Layer Transfer with Masked Implantation W Chen, P Bandaru, CW Tang, KM Lau, TF Kuech, SS Lau
Electrochemical and Solid-State Letters 12 (4), H149, 2009
253 2009 Nonalloyed ohmic contacts to n ‐GaAs by solid‐phase epitaxy of Ge ED Marshall, B Zhang, LC Wang, PF Jiao, WX Chen, T Sawada, SS Lau, ...
Journal of applied physics 62 (3), 942-947, 1987
248 1987 Stabilization of copper catalysts for liquid‐phase reactions by atomic layer deposition BJ O'Neill, DHK Jackson, AJ Crisci, CA Farberow, F Shi, AC Alba‐Rubio, ...
Angewandte Chemie 125 (51), 14053-14057, 2013
237 2013 Pressure dependence of GaAs/Alx 1−x As quantum‐well bound states: The determination of valence‐band offsets DJ Wolford, TF Kuech, JA Bradley, MA Gell, D Ninno, M Jaros
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986
233 1986 Method of making a single crystals Ga* N article MA Tischler, TF Kuech
US Patent 5,679,152, 1997
223 1997 Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy TF Kuech, MA Tischler, PJ Wang, G Scilla, R Potemski, F Cardone
Applied physics letters 53 (14), 1317-1319, 1988
208 1988 High temperature adduct formation of trimethylgallium and ammonia A Thon, TF Kuech
Applied physics letters 69 (1), 55-57, 1996
206 1996 Properties of high‐purity Alx 1−x As grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors TF Kuech, DJ Wolford, E Veuhoff, V Deline, PM Mooney, R Potemski, ...
Journal of applied physics 62 (2), 632-643, 1987
194 1987 Metal-organic vapor phase epitaxy of compound semiconductors TF Kuech
Materials science reports 2 (1), 1-49, 1987
184 1987 J Sun, KA Rickert, JM Redwing, AB Ellis, FJ Himpsel, TF Kuech
Applied physics letters 76 (4), 415-417, 2000
182 2000 Role of the Cu-ZrO2 Interfacial Sites for Conversion of Ethanol to Ethyl Acetate and Synthesis of Methanol from CO2 and H2 I Ro, Y Liu, MR Ball, DHK Jackson, JP Chada, C Sener, TF Kuech, ...
ACS Catalysis 6 (10), 7040-7050, 2016
177 2016 Dependence of the AlxGa1− xAs band edge on alloy composition based on the absolute measurement of x TF Kuech, DJ Wolford, R Potemski, JA Bradley, KH Kelleher, D Yan, ...
Applied physics letters 51 (7), 505-507, 1987
177 1987 The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1− xAs layers and heterostructures TF Kuech, E Veuhoff, TS Kuan, V Deline, R Potemski
journal of crystal growth 77 (1-3), 257-271, 1986
177 1986 Ionic conductivity of calcia, yttria, and rare earth‐doped cerium dioxide RT Dirstine, RN Blumenthal, TF Kuech
Journal of the electrochemical society 126 (2), 264, 1979
170 1979 