Spencer Wells

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	Totes	Des de 2020
Citacions	5274	2811
Índex h	17	15
Índex i10	19	18

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16 articles

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Coautors

Mark HersamNorthwestern UniversityCorreu electrònic verificat a northwestern.edu
Joshua D. WoodPrincipal Solutions Engineer, DynatraceCorreu electrònic verificat a dynatrace.com
Vinod K. SangwanNorthwestern University; University of Maryland College Park; Indian Institute of Technology BombayCorreu electrònic verificat a northwestern.edu
Deep JariwalaUniversity of Pennsylvania, Caltech, Northwestern University, Rice UniversityCorreu electrònic verificat a seas.upenn.edu
Kan-Sheng ChenNorthwestern UniversityCorreu electrònic verificat a northwestern.edu
Christopher R RyderBooz Allen HamiltonCorreu electrònic verificat a u.northwestern.edu
Lincoln J LauhonNorthwestern UniversityCorreu electrònic verificat a northwestern.edu
Joohoon KangSungkyunkwan University (SKKU)Correu electrònic verificat a skku.edu
Jae-Hyeok LeeDepartment of Materials Science & Engineering, Northwestern UniversityCorreu electrònic verificat a northwestern.edu
Jian ZhuProfessor, Nankai UniversityCorreu electrònic verificat a nankai.edu.cn
Yang YangNorthwestern UniversityCorreu electrònic verificat a northwestern.edu
Shumao Cui （崔树茂）University of Wisconsin MilwaukeeCorreu electrònic verificat a uwm.edu
Lintao PengArgonne, Nanoscience and Technology, Ph.D Northwestern UniversityCorreu electrònic verificat a u.northwestern.edu
Junmo KangPostdoctoral fellow, Northwestern UniversityCorreu electrònic verificat a northwestern.edu
Yongsuk ChoiAndrew and Peggy Cherng Department of Medical Engineering, California Institute of TechnologyCorreu electrònic verificat a caltech.edu
Jeong Ho ChoYonsei UniversityCorreu electrònic verificat a yonsei.ac.kr
Jeffrey R. GuestExperimental Physicist, Argonne National Laboratory, University of MichiganCorreu electrònic verificat a anl.gov
Itamar BallaIntel Corp.Correu electrònic verificat a u.northwestern.edu
Hyun-Joong ChungProfessor of Chemical & Materials Engineering, University of AlbertaCorreu electrònic verificat a ualberta.ca

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Spencer Wells

Research Scientist, Facebook

Correu electrònic verificat a u.northwestern.edu


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation JD Wood, SA Wells, D Jariwala, KS Chen, EK Cho, VK Sangwan, X Liu, ... Nano letters 14 (12), 6964–6970, 2014	1636	2014
Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry CR Ryder, JD Wood, SA Wells, Y Yang, D Jariwala, TJ Marks, GC Schatz, ... Nature chemistry 8 (6), 597-602, 2016	809	2016
Solvent exfoliation of electronic-grade, two-dimensional black phosphorus J Kang, JD Wood, SA Wells, JH Lee, X Liu, KS Chen, MC Hersam ACS nano 9 (4), 3596-3604, 2015	787	2015
Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors S Cui, H Pu, SA Wells, Z Wen, S Mao, J Chang, MC Hersam, J Chen Nature communications 6 (1), 8632, 2015	713	2015
Chemically tailoring semiconducting two-dimensional transition metal dichalcogenides and black phosphorus CR Ryder, JD Wood, SA Wells, MC Hersam ACS nano 10 (4), 3900-3917, 2016	288	2016
Stable aqueous dispersions of optically and electronically active phosphorene J Kang, SA Wells, JD Wood, JH Lee, X Liu, CR Ryder, J Zhu, JR Guest, ... Proceedings of the National Academy of Sciences 113 (42), 11688-11693, 2016	263	2016
Probing out-of-plane charge transport in black phosphorus with graphene-contacted vertical field-effect transistors J Kang, D Jariwala, CR Ryder, SA Wells, Y Choi, E Hwang, JH Cho, ... Nano letters 16 (4), 2580-2585, 2016	142	2016
Solution‐based processing of optoelectronically active indium selenide J Kang, SA Wells, VK Sangwan, D Lam, X Liu, J Luxa, Z Sofer, ... Advanced Materials 30 (38), 1802990, 2018	113	2018
Resolving the in‐plane anisotropic properties of black phosphorus X Liu, CR Ryder, SA Wells, MC Hersam Small Methods 1 (6), 1700143, 2017	109	2017
Scanning Probe Nanopatterning and Layer-by-Layer Thinning of Black Phosphorus. X Liu, KS Chen, SA Wells, I Balla, J Zhu, JD Wood, MC Hersam Advanced Materials (Deerfield Beach, Fla.) 29 (1), 2016	99	2016
Suppressing ambient degradation of exfoliated InSe nanosheet devices via seeded atomic layer deposition encapsulation SA Wells, A Henning, JT Gish, VK Sangwan, LJ Lauhon, MC Hersam Nano letters 18 (12), 7876-7882, 2018	84	2018
Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates HJ Chung, T Kim, HS Kim, SA Wells, S Jo, N Ahmed, YH Jung, SM Won, ... Advanced Functional Materials 21 (16), 3029-3036, 2011	68	2011
Semi-quantitative design of black phosphorous field-effect transistor sensors for heavy metal ion detection in aqueous media J Chang, H Pu, SA Wells, K Shi, X Guo, G Zhou, X Sui, R Ren, S Mao, ... Molecular Systems Design & Engineering 4 (3), 491-502, 2019	31	2019
Molecular-scale characterization of photoinduced charge separation in mixed-dimensional InSe–organic van der Waals heterostructures S Li, C Zhong, A Henning, VK Sangwan, Q Zhou, X Liu, MS Rahn, ... ACS nano 14 (3), 3509-3518, 2020	25	2020
Intrinsic carrier multiplication in layered Bi₂O₂Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz VK Sangwan, J Kang, D Lam, JT Gish, SA Wells, J Luxa, JP Male, ... Nano Research 14, 1961-1966, 2021	23	2021
All-electrical determination of crystal orientation in anisotropic two-dimensional materials L Peng, SA Wells, CR Ryder, MC Hersam, M Grayson Physical review letters 120 (8), 086801, 2018	23	2018
Extrinsic polarization-controlled optical anisotropy in plasmon-black phosphorus coupled system Z Liu, SA Wells, S Butun, E Palacios, MC Hersam, K Aydin Nanotechnology 29 (28), 285202, 2018	18	2018
Low-voltage 2D material field-effect transistors enabled by ion gel capacitive coupling Y Choi, J Kang, D Jariwala, SA Wells, MS Kang, TJ Marks, MC Hersam, ... Chemistry of Materials 29 (9), 4008-4013, 2017	16	2017
Amorphous to Crystal Phase Change Memory Effect with Two-Fold Bandgap Difference in Semiconducting K₂Bi₈Se₁₃ SM Islam, VK Sangwan, D Bruce Buchholz, SA Wells, L Peng, L Zeng, ... Journal of the American Chemical Society 143 (16), 6221-6228, 2021	12	2021
Phase stability and optoelectronic properties of the bixbyite phase in the gallium–indium–tin–oxide system A Dolgonos, SA Wells, KR Poeppelmeier, TO Mason Journal of the American Ceramic Society 98 (2), 669-674, 2015	8	2015

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