Christian Lavoie

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Jean Jordan-SweetIBM T.J. Watson Research CenterCorreu electrònic verificat a us.ibm.com
Ahmet S. OzcanSemiotic AICorreu electrònic verificat a semiotic.ai
Guy CohenResearcher, IBM T.J. Watson Research Center, Yorktown Height, New YorkCorreu electrònic verificat a us.ibm.com
Zhen ZhangProfessor of Solid-State Electronics, Uppsala UniversityCorreu electrònic verificat a angstrom.uu.se
Roland Van Meirhaegheprofessor University of GentCorreu electrònic verificat a ugent.be
Paul SolomonIBMCorreu electrònic verificat a us.ibm.com
Thomas TiedjeElectrical and Computer Engineering, University of Victoria, Victoria, BCCorreu electrònic verificat a uvic.ca
Stephen RossnagelUVA Dept Mat. Sci.Correu electrònic verificat a virginia.edu
Conal MurrayResearch Staff Member, IBM T.J. Watson Research CenterCorreu electrònic verificat a us.ibm.com
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityCorreu electrònic verificat a stanford.edu
Kenneth P RodbellIBM TJ Watson Research CenterCorreu electrònic verificat a us.ibm.com
Nicolas BREILApplied MaterialsCorreu electrònic verificat a amat.com
Kathryn GuariniIBMCorreu electrònic verificat a us.ibm.com
L.A. ClevengerIBM ResearchCorreu electrònic verificat a us.ibm.com
Phaedon AvourisIBM Fellow, Emeritus and University of Minnesota, MinneapolisCorreu electrònic verificat a umn.edu
Richard MartelProfessor of Chemistry, Universite de MontrealCorreu electrònic verificat a umontreal.ca
Jerry TersoffIBMCorreu electrònic verificat a us.ibm.com
Shane R JohnsonArizona State UniversityCorreu electrònic verificat a asu.edu
Dae-gyu ParkSenior Manager, IBM T.J.Watson Research CenterCorreu electrònic verificat a us.ibm.com
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityCorreu electrònic verificat a purdue.edu

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Christian Lavoie

Manager Advanced Characterization, IBM T.J. Watson Research Center, Yorktown Heights, NY

Correu electrònic verificat a us.ibm.com

Contacts to CMOS devices Diffusion and Intermetallics X-ray Characterization Quantum Materials


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Ambipolar electrical transport in semiconducting single-wall carbon nanotubes R Martel, V Derycke, C Lavoie, I Appenzeller, KK Chan, J Tersoff, ... Phys. Rev. Lett. 87, 256805, 2001	1081	2001
Self-aligned process for nanotube/nanowire FETs P Avouris, RA Carruthers, J Chen, CGMM Detavernier, C Lavoie, ... US Patent 8,119,466, 2012	546	2012
Towards implementation of a nickel silicide process for CMOS technologies C Lavoie, FM d’Heurle, C Detavernier, C Cabral Jr Microelectronic Engineering 70 (2-4), 144-157, 2003	519	2003
Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ... IEEE Electron Device Letters 31 (7), 731-733, 2010	311	2010
Thin film reaction of transition metals with germanium S Gaudet, C Detavernier, AJ Kellock, P Desjardins, C Lavoie Journal of Vacuum Science & Technology A 24 (3), 474-485, 2006	287	2006
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation J Kedzierski, E Nowak, T Kanarsky, Y Zhang, D Boyd, R Carruthers, ... Digest. International Electron Devices Meeting,, 247-250, 2002	282	2002
High-/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ... IEEE Electron Device Letters 31 (4), 275-277, 2010	264	2010
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices DD Perovic, MR Castell, A Howie, C Lavoie, T Tiedje, JSW Cole Ultramicroscopy 58 (1), 104-113, 1995	234	1995
An off-normal fibre-like texture in thin films on single-crystal substrates C Detavernier, AS Özcan, J Jordan-Sweet, EA Stach, J Tersoff, FM Ross, ... Nature 426 (6967), 641-645, 2003	230	2003
In-situ X-ray diffraction study of metal induced crystallization of amorphous silicon W Knaepen, C Detavernier, RL Van Meirhaeghe, JJ Sweet, C Lavoie Thin Solid Films 516 (15), 4946-4952, 2008	194	2008
Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition H Kim, C Cabral Jr, C Lavoie, SM Rossnagel Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002	176	2002
Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films C Lavoie, C Detavernier, C Cabral Jr, FM d’Heurle, AJ Kellock, ... Microelectronic engineering 83 (11-12), 2042-2054, 2006	154	2006
High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation D Deduytsche, C Detavernier, RL Van Meirhaeghe, C Lavoie Journal of applied physics 98 (3), 2005	138	2005
In situ x-ray diffraction study of metal induced crystallization of amorphous germanium W Knaepen, S Gaudet, C Detavernier, RL Van Meirhaeghe, JJ Sweet, ... Journal of Applied Physics 105 (8), 2009	126	2009
FinFET performance advantage at 22nm: An AC perspective M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, ... 2008 Symposium on VLSI Technology, 12-13, 2008	123	2008
Influence of Pt addition on the texture of NiSi on Si (001) C Detavernier, C Lavoie applied physics letters 84 (18), 3549-3551, 2004	121	2004
Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap SR Johnson, C Lavoie, MK Nissen, JT Tiedje US Patent 5,388,909, 1995	120	1995
Two gates are better than one [double-gate MOSFET process] PM Solomon, KW Guarini, Y Zhang, K Chan, EC Jones, GM Cohen, ... IEEE circuits and devices magazine 19 (1), 48-62, 2003	116	2003
Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy SR Johnson, C Lavoie, T Tiedje, JA Mackenzie Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993	116	1993
Triple-self-aligned, planar double-gate MOSFETs: devices and circuits KW Guarini, PM Solomon, Y Zhang, KK Chan, EC Jones, GM Cohen, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001	105	2001

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