Articles amb requisits d'accés públic - Arunas KadysMés informació
No estan disponibles en cap lloc: 14
Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth
J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ...
Applied Surface Science 427, 1027-1032, 2018
Requisits: Research Council of Lithuania
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
J Mickevičius, D Dobrovolskas, R Aleksiejūnas, K Nomeika, T Grinys, ...
Journal of Crystal Growth 459, 173-177, 2017
Requisits: Research Council of Lithuania
Correlation between growth interruption and indium segregation in InGaN MQWs
M Dmukauskas, J Mickevičius, D Dobrovolskas, A Kadys, S Nargelas, ...
Journal of Luminescence 221, 117103, 2020
Requisits: Research Council of Lithuania
Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices
J Mickevičius, T Grinys, A Kadys, G Tamulaitis
Optical Materials 82, 71-74, 2018
Requisits: Research Council of Lithuania
Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics
S Nargelas, J Mickevičius, A Kadys, K Jarašiūnas, T Malinauskas
Optics & Laser Technology 134, 106624, 2021
Requisits: Research Council of Lithuania
Extreme radiation resistance in InN
Ž Podlipskas, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, ...
Journal of Alloys and Compounds 789, 48-55, 2019
Requisits: Research Council of Lithuania
Spatial redistribution of photoexcited carriers in InGaN/GaN structures emitting in a wide spectral range
J Mickevičius, D Dobrovolskas, J Aleknavičius, T Grinys, A Kadys, ...
Journal of Luminescence 199, 379-383, 2018
Requisits: Research Council of Lithuania
Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs
J Mickevičius, K Nomeika, M Dmukauskas, A Kadys, S Nargelas, ...
Vacuum 183, 109871, 2021
Requisits: Research Council of Lithuania
Luminescence of structured InN deposited on graphene interlayer
D Dobrovolskas, A Kadys, A Usikov, T Malinauskas, K Badokas, I Ignatjev, ...
Journal of Luminescence 232, 117878, 2021
Requisits: Research Council of Lithuania
Influence of proton irradiation on carrier mobility in InN epitaxial layers
A Mekys, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, G Tamulaitis
Thin Solid Films 692, 137619, 2019
Requisits: Research Council of Lithuania
High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates
S Miasojedovas, C Mauder, S Krotkus, A Kadys, T Malinauskas, K Jarašiu, ...
Journal of crystal growth 329 (1), 33-38, 2011
Requisits: German Research Foundation
The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition
M Kolenda, A Kadys, T Malinauskas, E Radiunas, R Ritasalo, ...
Materials Science and Engineering: B 284, 115850, 2022
Requisits: Research Council of Lithuania
Improvement of luminescence properties of InN by optimization of multi-step deposition on sapphire
J Mickevičius, D Dobrovolskas, T Malinauskas, M Kolenda, A Kadys, ...
Thin Solid Films 680, 89-93, 2019
Requisits: Research Council of Lithuania
Green light second-harmonic generation in a planar quasi-symmetrical GaN waveguide structure
R Tomašiūnas, D Kezys, M Kolenda, I Dailidėnas, A Kadys, I Riklaitis, ...
2024 24th International Conference on Transparent Optical Networks (ICTON), 1-3, 2024
Requisits: Research Council of Lithuania
Disponibles en algun lloc: 6
Direct Auger recombination and density-dependent hole diffusion in InN
R Aleksiejūnas, Ž Podlipskas, S Nargelas, A Kadys, M Kolenda, ...
Scientific reports 8 (1), 4621, 2018
Requisits: Research Council of Lithuania
Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
J Mickevičius, J Jurkevičius, A Kadys, G Tamulaitis, M Shur, M Shatalov, ...
AIP advances 6 (4), 2016
Requisits: US National Science Foundation
Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage
V Svrcek, M Kolenda, A Kadys, I Reklaitis, D Dobrovolskas, ...
Nanomaterials 8 (12), 1039, 2018
Requisits: Research Council of Lithuania, UK Engineering and Physical Sciences Research …
Spectral dependence of THz emission from InN and InGaN layers
R Norkus, R Aleksiejūnas, A Kadys, M Kolenda, G Tamulaitis, A Krotkus
Scientific reports 9 (1), 7077, 2019
Requisits: Research Council of Lithuania
Fabrication and replication of micro-optical structures for growth of GaN-based light emitting diodes
G Gervinskas, G Seniutinas, A Vijayakumar, S Bhattacharya, E Jelmakas, ...
Micro/Nano Materials, Devices, and Systems 8923, 682-691, 2013
Requisits: Australian Research Council
Epitaxial lateral overgrowth of GaN on a laser-patterned graphene mask
A Kadys, J Mickevičius, K Badokas, S Strumskis, E Vanagas, Ž Podlipskas, ...
Nanomaterials 13 (4), 784, 2023
Requisits: Research Council of Lithuania
Les dades de publicació i de finançament es determinen automàticament per mitjà d'un programa informàtic