Anil Lodhi

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Shalu SainiIIT JodhpurCorreu electrònic verificat a iitj.ac.in
Shree Prakash TiwariProfessor, Department of Electrical Engineering, Indian Institute of Technology JodhpurCorreu electrònic verificat a iitj.ac.in
Dip Prakash SamajdarAssistant Professor, Electronics and Communication Engineering, IIITDM, JabalpurCorreu electrònic verificat a iiitdmj.ac.in
AMIT KUMAR BEHERAIndian Institute of Technology RoorkeeCorreu electrònic verificat a ec.iitr.ac.in
Dr. Atul KumarMaulana Azad National Institute of Technology BhopalCorreu electrònic verificat a manit.ac.in
Dr. Dharmendra Singh YadavDepartment of Electronics and Communication Engineering, NIT Kurukshetra, Haryana, INDIACorreu electrònic verificat a nitkkr.ac.in

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Anil Lodhi

Ph.D. Scholar, Indian Institute of Technology Jodhpur

Correu electrònic verificat a iitj.ac.in - Pàgina d'inici

Micro & Nano Electronics VLSI Design ReRAM Non-volatile Memory Resistive switching


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Resistive switching behavior of TiO2/(PVP: MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices S Saini, A Dwivedi, A Lodhi, A Khandelwal, SP Tiwari Memories-Materials, Devices, Circuits and Systems 4, 100029, 2023	26	2023
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS₂/TiO₂ Bilayer S Saini, A Lodhi, A Dwivedi, A Khandelwal, SP Tiwari IEEE Transactions on Electron Devices 70 (1), 53-58, 2022	24	2022
Sensitivity and sensing speed analysis of extended nano-cavity and source over electrode in Si/SiGe based TFET biosensor A Lodhi, C Rajan, AK Behera, DP Samajdar, D Soni, DS Yadav Applied Physics A 126 (11), 837, 2020	24	2020
Linearity and Reliability Analysis of an Electrically Doped Hetero Material Nanowire TFET C Rajan, DP Samajdar, J Patel, A Lodhi, SK Agnihotri, D Sharma, ... Journal of Electronic Materials 49 (7), 4307--4317, 2020	16	2020
Fabrication and modeling of flexible high-performance resistive switching devices with biomaterial gelatin/ultrathin HfOx hybrid bilayer A Dwivedi, A Lodhi, S Saini, H Agarwal, SP Tiwari IEEE Transactions on Electron Devices 69 (11), 6423-6429, 2022	15	2022
Bipolar resistive switching properties of TiO x/graphene oxide doped PVP based bilayer ReRAM A Lodhi, S Saini, A Dwivedi, A Khandelwal, SP Tiwari Journal of Micromechanics and Microengineering 32 (4), 044001, 2022	14	2022
Implementation of∑ Δ ADC using electrically doped III‐V ternary alloy semiconductor nano‐wire TFET C Rajan, J Patel, D Sharma, AK Behera, A Lodhi, A Lemtur, DP Samajdar Micro & Nano Letters 15 (4), 266-271, 2020	13	2020
Investigation of DC, RF and linearity performances of III–V semiconductor-based electrically doped TFET for mixed signal applications C Rajan, DP Samajdar, A Lodhi Journal of Electronic Materials 50, 2348-2355, 2021	11	2021
Implementation of digital-to-analog converter through CP-based GaAs/GaSb nanowire GAA-TFET A Lodhi, C Rajan, D Sharma, AK Behera, DP Samajdar, A Kumar Applied Physics A 126, 1-11, 2020	9	2020
Radiation-Hardened ReRAM Devices for Flexible Electronics A Lodhi, A Dwivedi, S Saini, N Jingar, A Khandelwal, SP Tiwari IEEE Journal on Flexible Electronics 2 (5), 402-407, 2023	5	2023
Resistive Switching Behavior of TiO₂/(PVP:MoS₂) Nanocomposite Bilayer Hybrid RRAM S Saini, A Lodhi, A Dwivedi, A Khandelwal, SP Tiwari International Symposium on VLSI Design and Test, 478-485, 2022	5	2022
Flexible resistive memory device with egg-albumen/HfO x hybrid bilayer: fabrication and modeling of its switching variations A Dwivedi, S Saini, A Lodhi, H Agarwal, SP Tiwari Flexible and Printed Electronics 9 (2), 025004, 2024	3	2024
Comprehensive Investigation of Shelf Life and Performance of Flexible Hybrid RRAM Devices With PVK:MoS/TiO Bilayer S Saini, A Lodhi, A Dwivedi, A Khandelwal, SP Tiwari IEEE Transactions on Electron Devices, 2024	3	2024
Flexible Forming Free Resistive Memory Device with 2D Material as Switching Layer S Saini, A Dwivedi, A Lodhi, A Khandelwal, SP Tiwari 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023	3	2023
Albumen based flexible memory device for bio-sustainable electronics A Dwivedi, A Lodhi, S Saini, H Agarwal, SP Tiwari 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023	3	2023
Multilevel Resistive Switching in Flexible RRAM Devices with a PVP:MoSe₂ Active Layer S Saini, A Dwivedi, A Lodhi, A Khandelwal, SP Tiwari ACS Applied Electronic Materials 6 (9), 6718-6725, 2024	2	2024
Performance Analysis of Sigma Delta ADC Developed using Electrically Doped GAPSb/InP Gate All Around Tunnel Field Effect Transistor AK Behera, C Rajan, DP Samajdar, A Lodhi, J Patel, K Mishra, DS Yadav Journal of Electronic Materials 50, 5740-5753, 2021	2	2021
Effect of Temperature Induced Phase Variation in ALD TiO₂ Dielectric on the Switching Behaviour of RRAM Devices A Dwivedi, S Saini, A Lodhi, H Agarwal, SP Tiwari 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022	1	2022
Flexible RRAM with Natural Gelatin Exhibiting High Current On/Off Ratio and Retention A Dwivedi, A Lodhi, S Saini, H Agarwal, SP Tiwari 2022 IEEE International Flexible Electronics Technology Conference (IFETC), 1-2, 2022	1	2022
Exploration of Chitosan as an Active Material in Eco-friendly ReRAM Devices A Lodhi, A Dwivedi, S Saini, A Khandelwal, SP Tiwari 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 532-535, 2023		2023

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