Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk A Laturia, ML Van de Put, WG Vandenberghe
npj 2D Materials and Applications 2 (1), 6, 2018
851 2018 Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview G Gaddemane, WG Vandenberghe, ML Van de Put, S Chen, S Tiwari, ...
101 2018 Identification of two-dimensional layered dielectrics from first principles MR Osanloo, ML Van de Put, A Saadat, WG Vandenberghe
Nature communications 12 (1), 5051, 2021
74 2021 Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe
npj 2D Materials and Applications 5 (1), 54, 2021
69 2021 InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ...
Journal of Applied Physics 115 (18), 2014
62 2014 Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study A Kramer, ML Van de Put, CL Hinkle, WG Vandenberghe
npj 2D Materials and Applications 4 (1), 10, 2020
59 2020 Critical behavior of the ferromagnets S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe
Physical Review B 103 (1), 014432, 2021
47 2021 Master-equation study of quantum transport in realistic semiconductor devices including electron-phonon and surface-roughness scattering PB Vyas, ML Van de Put, MV Fischetti
Physical Review Applied 13 (1), 014067, 2020
47 2020 New Verbeekite-type polymorphic phase and rich phase diagram in the W Liu, MR Osanloo, X Wang, S Li, N Dhale, H Wu, ML Van de Put, ...
Physical Review B 104 (2), 024507, 2021
44 2021 Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal … G Gaddemane, S Gopalan, ML Van de Put, MV Fischetti
Journal of computational electronics 20, 49-59, 2021
41 2021 Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors MR Osanloo, A Saadat, ML Van de Put, A Laturia, WG Vandenberghe
Nanoscale 14 (1), 157-165, 2022
37 2022 Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: Silicene and germanene G Gaddemane, WG Vandenberghe, ML Van de Put, E Chen, MV Fischetti
Journal of Applied Physics 124 (4), 2018
37 2018 Tensile strained Ge tunnel field-effect transistors: k· p material modeling and numerical device simulation KH Kao, AS Verhulst, M Van de Put, WG Vandenberghe, B Soree, ...
Journal of Applied Physics 115 (4), 2014
36 2014 Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials ML Van de Put, MV Fischetti, WG Vandenberghe
Computer Physics Communications 244, 156-169, 2019
35 2019 Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy S Tiwari, J Vanherck, ML Van de Put, WG Vandenberghe, B Sorée
Physical Review Research 3 (4), 043024, 2021
32 2021 “Hot electrons in Si lose energy mostly to optical phonons”: Truth or myth? MV Fischetti, PD Yoder, MM Khatami, G Gaddemane, ML Van De Put
Applied Physics Letters 114 (22), 2019
28 2019 Efficient solution of the Wigner-Liouville equation using a spectral decomposition of the force field ML Van de Put, B Sorée, W Magnus
Journal of Computational Physics 350, 314-325, 2017
28 2017 Uniform strain in heterostructure tunnel field-effect transistors D Verreck, AS Verhulst, ML Van de Put, B Sorée, N Collaert, A Mocuta, ...
IEEE electron device letters 37 (3), 337-340, 2016
27 2016 Perspective of tunnel-FET for future low-power technology nodes AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ...
2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014
26 2014 Theoretical study of electronic transport in two-dimensional transition metal dichalcogenides: Effects of the dielectric environment S Gopalan, ML Van de Put, G Gaddemane, MV Fischetti
Physical Review Applied 18 (5), 054062, 2022
23 2022 
William VandenbergheAssociate Professor at U.T. Dallas, dept. Materials Science & EngineeringCorreu electrònic verificat a utdallas.edu