‪Vasyl P. Kladko, V.P. Klad'ko, V. Kladko, V.P. Kladko, Vasyl Kladko, В.П. Кладько‬

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Andrian V. Kuchuk, А.В. Кучук, А. Кучу...Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville, USACorreu electrònic verificat a uark.edu
Belyaev A.E.Institute of semiconductor physicsCorreu electrònic verificat a isp.kiev.ua
Viktor Strelchuk; V.V.Strelchuk; V.V.Str...Head of Laboratory; V. E. Lashkaryov Institute of Semiconductor Physics, National Academy ofCorreu electrònic verificat a isp.kiev.ua
P M Lytvyn, P M Litvin, П М ЛитвинSenior Researcher, V.Lashkaryov Institute of Semiconductor Physics NAS UkraineCorreu electrònic verificat a isp.kiev.ua
Gregory SalamoProfessor of Physics, University of ArkansasCorreu electrònic verificat a uark.edu
Yuriy I. MazurInstitute for Nanoscience and Engineering, University of ArkansasCorreu electrònic verificat a uark.edu
Nadiia Safriuk-RomanenkoV.E.Lashkaryov Institute of semiconductor physics NAS of UkraineCorreu electrònic verificat a isp.kiev.ua
viktor melnikisp , KievCorreu electrònic verificat a isp.kiev.ua
Larysa KhomenkovaV. Lashkaryov Institute of Semiconductor Physics & National university "Kyiv Mohyla academy"Correu electrònic verificat a ukma.edu.ua
Vadim MolodkinG.V.Kurdyumov Institute for Metal Physics, N.A.S. of UkraineCorreu electrònic verificat a imp.kiev.ua
Hryhorii StanchuPhDCorreu electrònic verificat a uark.edu
Олександр Коломис; O.F. Kolomys; A....Інститут фізики напівпровідників ім. В.Є. Лашкарьова НАН УкраїниCorreu electrònic verificat a isp.kiev.ua
IV Prokopenko, ИВ ПрокопенкоV. Lashkaryov Institute of Semiconductor Physics NAS Ukraine, Институт физики полупроводников НАНУCorreu electrònic verificat a isp.kiev.ua
Volodymyr SheremetVirginia Commonwealth UniversityCorreu electrònic verificat a vcu.edu
Morgan E. WareUniversity of ArkansasCorreu electrònic verificat a uark.edu
Lytvyn Oksana, Литвин ОксанаКиївський столичний університет імені Бориса ГрінченкаCorreu electrònic verificat a kubg.edu.ua
Volodymyr YukhymchukHead of the Department of Optics and Spectroscopy, Doctor of Science, V. Lashkaryov Institute ofCorreu electrònic verificat a isp.kiev.ua
Renata RatajczakNational Centre for Nuclear Resarch (NCBJ)Correu electrònic verificat a ncbj.gov.pl
S. I. OlikhovskiiLeading researcher, Professor, Dr. Sci. Phys.Math, G. V. Kurdyumov Institute for Metal PhysicsCorreu electrònic verificat a imp.kiev.ua
Mykhailo ValakhV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineCorreu electrònic verificat a isp.kiev.ua

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Vasyl P. Kladko, V.P. Klad'ko, V. Kladko, V.P. Kladko, Vasyl Kladko, В.П. Кладько

Corresponding Member of NAS of Ukraine, Professor, Institute of Semiconductors Physics NAS of

Correu electrònic verificat a isp.kiev.ua - Pàgina d'inici

X-ray physics X-ray diffraction Deformation HRXRD X-ray scattering


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Low-temperature method for thermochromic high ordered VO2 phase formation V Melnik, I Khatsevych, V Kladko, A Kuchuk, V Nikirin, B Romanyuk Materials Letters 68, 215-217, 2012	86	2012
Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability A.V. Kuchuk, P. Borowicz, M. Wzorek, M. Borysiewicz, R. Ratajczak, K ... Advances in Condensed Matter Physics 2016 (Article ID 9273702), 26 pages, 2016	66*	2016
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ... Nanoscale research letters 7 (1), 289, 2012	47	2012
Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide A Kuchuk, V Kladko, M Guziewicz, A Piotrowska, R Minikayev, A Stonert, ... Journal of Physics: Conference Series 100 (4), 042003, 2008	44	2008
Effect Of Doping By Transitional Elements On Properties Of Chalcogenide Glasses A. Stronski, O. Paiuk, A. Gudymenko, V. Kladko, P. Oleksenko, N. Vuichyk, M ... Ceramics International 41 (6), 7543–7548, 2015	42	2015
Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ... Microelectronic Engineering 85 (10), 2142-2145, 2008	42	2008
Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate VP Kladko, AF Kolomys, MV Slobodian, VV Strelchuk, VG Raycheva, ... Journal of applied physics 105 (6), 2009	40	2009
Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments B Romanjuk, V Kladko, V Melnik, V Popov, V Yukhymchuk, A Gudymenko, ... Materials science in semiconductor processing 8 (1-3), 171-175, 2005	40*	2005
Problems of Real Semiconductor Crystals Diagnostics PI Baranskii, AE Belyaev, GP Gaidar, VP Klad’ko, AV Kuchuk Nauk. Dumka, Kyiv, 462, 2014	39*	2014
Liquid-phase sintered bismuth ferrite multiferroics and their giant dielectric constant NA Liedienov, AV Pashchenko, VA Turchenko, VY Sycheva, AV Voznyak, ... Ceramics International 45 (12), 14873-14879, 2019	38	2019
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride AE Belyaev, NS Boltovets, VN Ivanov, VP Kladko, RV Konakova, ... Semiconductors 42 (6), 689-693, 2008	37*	2008
Investigation of indium distribution in InGaAs∕ GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering YI Mazur, ZM Wang, GJ Salamo, VV Strelchuk, VP Kladko, VF Machulin, ... Journal of Applied Physics 99 (2), 023517, 2006	37*	2006
Optical characterization of the AgInS2 nanocrystals synthesized in aqueous media under stoichiometric conditions L Borkovska, А Romanyuk, V Strelchuk, Y Polishchuk, V Kladko, ... Materials Science in Semiconductor Processing 37 (9), 135-142, 2015	36*	2015
Structure, Non-stoichiometry, Valence of Ions, Dielectric and Magnetic Properties of Single-Phase Bi0.9La0.1FeO3-δ Multiferroics A.V Pashchenko,N.A Liedienov, Quanjun Li, D.D. Tatarchuk, V.A. Turchenko, I ... Journal of Magnetism and Magnetic Materials 483, 100-113, 2019	34	2019
Modification of multifunctional properties of the magneto-resistive La0.6Sr0.15Bi0.15Mn1.1-xBxO3-Δ ceramics when replacing manganese with 3d-Ions of Cr, Fe, Co, Ni A.V. Pashchenko, N.A. Liedienov, V.P. Pashchenko, V.K. Prokopenko, V.V ... Journal of Alloys and Compounds 767 (10), 1117-1125, 2018	34	2018
Structural transformation and functional properties of vanadium oxide films after low-temperature annealing Yu. Goltvyanskyi, I. Khatsevych, A. Kuchuk, V. Kladko, V. Melnik, P. Lytvyn ... Thin Solid Films 564, 179-185, 2014	32	2014
Functionalization of 2D macroporous silicon under the high-pressure oxidation L Karachevtseva, M Kartel, V Kladko, O Gudymenko, W Bo, V Bratus, ... Applied Surface Science 434, 142-147, 2018	30	2018
Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes AE Belyaev, VV Basanets, NS Boltovets, AV Zorenko, LM Kapitanchuk, ... Semiconductors 45, 253-259, 2011	30*	2011
On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons VP Klad’ko, SV Plyatsko Semiconductors 32 (3), 235-237, 1998	30*	1998
X-ray diffraction investigation of GaN layers on Si (111) and Al2O3 (0001) substrates NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ... Semiconductor physics quantum electronics & optoelectronics 16 (3), 265-272, 2013	29	2013

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