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Hao-Ling Tang
Hao-Ling Tang
Correu electrònic verificat a amat.com
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Epitaxial growth of a monolayer WSe2-MoS2 lateral pn junction with an atomically sharp interface
MY Li, Y Shi, CC Cheng, LS Lu, YC Lin, HL Tang, ML Tsai, CW Chu, ...
Science 349 (6247), 524-528, 2015
12632015
Ultralow contact resistance between semimetal and monolayer semiconductors
PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park, MH Chiu, AY Lu, ...
Nature 593 (7858), 211-217, 2021
10162021
Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit
F Xue, W Hu, KC Lee, LS Lu, J Zhang, HL Tang, A Han, WT Hsu, S Tu, ...
Advanced Functional Materials 28 (50), 1803738, 2018
3462018
Mixed-dimensional MXene-hydrogel heterostructures for electronic skin sensors with ultrabroad working range
Y Cai, J Shen, CW Yang, Y Wan, HL Tang, AA Aljarb, C Chen, JH Fu, ...
Science advances 6 (48), eabb5367, 2020
2512020
Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides
A Aljarb, Z Cao, HL Tang, JK Huang, M Li, W Hu, L Cavallo, LJ Li
ACS nano 11 (9), 9215-9222, 2017
1472017
Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors
HL Tang, MH Chiu, CC Tseng, SH Yang, KJ Hou, SY Wei, JK Huang, ...
ACS nano 11 (12), 12817-12823, 2017
1242017
Band alignment of 2D transition metal dichalcogenide heterojunctions
MH Chiu, WH Tseng, HL Tang, YH Chang, CH Chen, WT Hsu, WH Chang, ...
Advanced Functional Materials 27 (19), 1603756, 2017
972017
Metal‐guided selective growth of 2D materials: demonstration of a bottom‐up CMOS inverter
MH Chiu, HL Tang, CC Tseng, Y Han, A Aljarb, JK Huang, Y Wan, JH Fu, ...
Advanced Materials 31 (18), 1900861, 2019
582019
Unveiling defect-mediated carrier dynamics in monolayer semiconductors by spatiotemporal microwave imaging
Z Chu, CY Wang, J Quan, C Zhang, C Lei, A Han, X Ma, HL Tang, ...
Proceedings of the National Academy of Sciences 117 (25), 13908-13913, 2020
402020
Vertical transistor and method of manufacturing the same
CH Diaz, CH Wang, WY Lien, KC Yang, HL Tang
US Patent 9,911,848, 2018
402018
Strain-directed layer-by-layer epitaxy toward van der Waals homo-and heterostructures
Y Wan, JK Huang, CP Chuu, WT Hsu, CJ Lee, A Aljarb, CW Huang, ...
ACS Materials Letters 3 (4), 442-453, 2021
212021
Analysis of relative intensity noise spectra for uniformly and chirpily stacked InAs–InGaAs–GaAs quantum dot lasers
G Lin, HL Tang, HC Cheng, HL Chen
Journal of lightwave technology 30 (3), 331-336, 2011
172011
Contact engineering for high-performance N-type 2D semiconductor transistors
Y Lin, PC Shen, C Su, AS Chou, T Wu, CC Cheng, JH Park, MH Chiu, ...
2021 IEEE International Electron Devices Meeting (IEDM), 37.2. 1-37.2. 4, 2021
152021
Epitaxial Growth and Determination of Band Alignment of Bi2Te3–WSe2 Vertical van der Waals Heterojunctions
CW Yang, HL Tang, S Sattar, MH Chiu, Y Wan, CH Chen, J Kong, ...
ACS Materials Letters 2 (10), 1351-1359, 2020
132020
Performance Limits and Potential of Multilayer Graphene–Tungsten Diselenide Heterostructures
SH Yang, FS Yang, HL Tang, MH Chiu, KC Lee, M Li, CY Lin, LJ Li, ...
Advanced Electronic Materials 7 (12), 2100355, 2021
22021
Method for growing a transition metal dichalcogenide layer, transition metal dichalcogenide growth device, and method for forming a semiconductor device
MH Chiu, HL Tang, LJ Li
US Patent 11,538,682, 2022
12022
2D Materials: Metal‐Guided Selective Growth of 2D Materials: Demonstration of a Bottom‐Up CMOS Inverter (Adv. Mater. 18/2019)
MH Chiu, HL Tang, CC Tseng, Y Han, A Aljarb, JK Huang, Y Wan, JH Fu, ...
Advanced Materials 31 (18), 1970132, 2019
12019
High Performance WSe2 Transistors with Multilayer Graphene Source/Drain
C Lien, HL Tang, MH Chiu, KJ Hou, SH Yang, JF Su, YF Lin, LJ Li
2018 14th IEEE International Conference on Solid-State and Integrated …, 2018
12018
Interpenetrated Graphene/WSe2 Lateral Heterostructures for Barrierless Ohmic-Contacted p-FETs
HL Tang, MH Chiu, CC Tseng, CH Lien, LJ Li
Electrochemical Society Meeting Abstracts 229, 1300-1300, 2016
12016
Contact construction for semiconductor devices with low-dimensional materials
HL Tang, A Kumar, M Pakala, KT Wong, YH Hsiao, D Yang, M Conrad, ...
US Patent App. 18/597,057, 2024
2024
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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