Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
509 2013 Semipolar DF Feezell, JS Speck, SP DenBaars, S Nakamura
Journal of Display Technology 9 (99), 1-9, 2013
382 * 2013 COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs JW Raring, DF Feezell, MP D'evelyn
US Patent App. 12/491,176, 2010
344 2010 Solid-state optical device having enhanced indium content in active regions JW Raring, DF Feezell, S Nakamura
US Patent 8,847,249, 2014
319 2014 HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN JW Raring, DF Feezell
US Patent App. 12/481,543, 2010
318 2010 Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser DF Feezell, DA Cohen, RM Farrell, M Ishida, S Nakamura
US Patent 7,480,322, 2009
291 2009 Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers RM Farrell, MC Schmidt, KC Kim, H Masui, DF Feezell, JS Speck, ...
US Patent 7,839,903, 2010
276 2010 Demonstration of nonpolar m-plane InGaN/GaN laser diodes MC Schmidt, KC Kim, RM Farrell, DF Feezell, DA Cohen, M Saito, K Fujito, ...
Japanese journal of applied physics 46 (3L), L190, 2007
272 2007 Optical device structure using GaN substrates for laser applications JW Raring, DF Feezell, NJ Pfister, R Sharma
US Patent 9,531,164, 2016
263 2016 Selective area epitaxy growth method and structure JW Raring, DF Feezell, S Nakamura
US Patent App. 12/482,440, 2009
260 2009 High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Y Zhao, S Tanaka, CC Pan, K Fujito, D Feezell, JS Speck, SP DenBaars, ...
Applied physics express 4 (8), 082104, 2011
250 2011 Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates JW Raring, DF Feezell
US Patent 8,259,769, 2012
228 2012 Self-aligned multi-dielectric-layer lift off process for laser diode stripes JW Raring, DF Feezell, N Pfister
US Patent 8,143,148, 2012
228 2012 Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ...
Applied Physics Letters 100 (20), 2012
221 2012 Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes DF Feezell, MC Schmidt, KC Kim, RM Farrell, DA Cohen, JS Speck, ...
US Patent 8,211,723, 2012
217 2012 Method and structure for manufacture of light emitting diode devices using bulk GaN C Poblenz, MC Schmidt, DF Feezell, JW Raring, R Sharma
US Patent 8,252,662, 2012
210 2012 Optical device structure using miscut GaN substrates for laser applications JW Raring, DF Feezell, NJ Pfister
US Patent 8,422,525, 2013
209 2013 Self-aligned multi-dielectric-layer lift off process for laser diode stripes JW Raring, DF Feezell, N Pfister
US Patent 8,728,842, 2014
203 2014 Group III-nitride lasers: a materials perspective MT Hardy, DF Feezell, SP DenBaars, S Nakamura
Materials Today 14 (9), 408-415, 2011
194 2011 Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers C Holder, JS Speck, SP DenBaars, S Nakamura, D Feezell
Applied Physics Express 5 (9), 092104, 2012
190 2012 
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraCorreu electrònic verificat a engineering.ucsb.edu